SiC MOSFETs

Sorting

Sort Column:

Sort Direction:

Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

SCTWA70N120G2V-4

HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 39.3936

Multiples of: 1

DMWSH120H28SM3Q

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 39.7257

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

97.4 A

28.5 mOhms

- 8 V , + 19 V

3.6 V

175 nC

- 55 C

+ 175 C

405 W

Enhancement

SCTW100N65G2AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 41.6194

Multiples of: 600

Through Hole

N - Channel

1 Channel

650 V

100 A

69 mOhms

- 10 V , + 22 V

5 V

162 nC

- 55 C

+ 200 C

420 W

Enhancement

AEC - Q101

MSC400SMA330B4

SiC MOSFETs MOSFET SIC 3300 V 400 mOhm TO-247-4
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 43.6333

Multiples of: 1

Through Hole

N - Channel

1 Channel

3.3 kV

11 A

400 mOhms

- 10 V , + 23 V

2.97 V

37 nC

- 55 C

+ 150 C

131 W

Enhancement

MSC035SMA170B

SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-247
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 47.1964

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

68 A

45 mOhms

- 10 V , + 23 V

1.8 V

178 nC

- 55 C

+ 175 C

370 W

Enhancement

NVBG045N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK-7L
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 48.4808

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

62 A

50 mOhms

- 8 V , + 22 V

4.3 V

105 nC

- 55 C

+ 175 C

242 W

Enhancement

EliteSiC

IV1Q07015T4G

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 55.2478

Multiples of: 1

SCTWA35N65G2V-4

HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 55.984

Multiples of: 1

MSC025SMA120B

SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 56.0448

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

103 A

31 mOhms

- 10 V , + 23 V

1.8 V

232 nC

- 55 C

+ 175 C

500 W

Enhancement

MSC035SMA170B4

SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-247-4
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

February 2027