SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTBG020N120SC1


SiC MOSFETs SIC MOS 20MW 1200V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1833
Ships to you
between Wed. 20 May to Fri. 22 May
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AUD 43.23

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV98 A28 mOhms- 15 V , + 25 V4.3 V220 nC- 55 C+ 175 C468 WEnhancement EliteSiC
NVHL020N120SC1


SiC MOSFETs 20MW 1200V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 919
Ships to you
between Wed. 20 May to Fri. 22 May
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AUD 62.37

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV103 A28 mOhms- 15 V , + 25 V4.3 V203 nC- 55 C+ 175 C535 WEnhancementAEC - Q101EliteSiC
NVBG020N090SC1


SiC MOSFETs 20MOHM 900V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 270
Ships to you
between Wed. 20 May to Fri. 22 May
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AUD 41.5329

Multiples of: 1

SMD/SMT N - Channel1 Channel900 V112 A28 mOhms- 8 V , + 22 V4.3 V200 nC- 55 C+ 175 C477 WEnhancementAEC - Q101EliteSiC
NTHL022N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 183
Ships to you
between Wed. 20 May to Fri. 22 May
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AUD 19.3757

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV68 A30 mOhms- 10 V , + 22 V4.4 V139 nC- 55 C+ 175 C352 WEnhancement EliteSiC
SCTW70N120G2V


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ 91 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 54.3107

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV91 A21 mOhms- 10 V , + 22 V4.9 V150 nC- 55 C+ 200 C547 WEnhancement  
IV1Q07015T4G


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip 0
6 to 16 Weeks Calender.png

AUD 55.2478

Multiples of: 1

                
SCTWA35N65G2V-4


HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 55.984

Multiples of: 1

                
C3M0016120D


SiC MOSFETs 1.2kV 15mOHMS G3 SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed 0
6 to 16 Weeks Calender.png

AUD 65.3908

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV115 A22.3 mOhms- 8 V , + 19 V1.8 V207 nC- 40 C+ 175 C556 WEnhancement  
SCTWA90N65G2V-4


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ 119 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 68.6656

Multiples of: 1

Through Hole N - Channel1 Channel650 V119 A24 mOhms- 10 V , + 22 V5 V157 nC- 55 C+ 200 C565 WEnhancement  
SCTW60N120G2


HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 73.8148

Multiples of: 1

                
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