SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT3022ALHRC11


SiC MOSFETs 650V 93A 339W SIC 22mOhm TO-247N
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 116
Ships to you
between Fri. 14 Nov to Thu. 20 Nov
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AUD 83.1349

Multiples of: 1

Through Hole N - Channel1 Channel650 V93 A22 mOhms- 4 V , + 22 V2.7 V133 nC- 55 C+ 175 C339 WEnhancementAEC - Q101 
MSC400SMA330B4


SiC MOSFETs MOSFET SIC 3300 V 400 mOhm TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 57.5794

Multiples of: 1

Through Hole N - Channel1 Channel3.3 kV11 A400 mOhms- 10 V , + 23 V2.97 V37 nC- 55 C+ 150 C131 WEnhancement  
IMW120R007M1HXKSA1


SiC MOSFETs Y
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Infineon 0
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AUD 60.273

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV225 A9.9 mOhms- 5 V , + 20 V5.2 V220 nC- 55 C+ 175 C750 WEnhancement  
SCTH100N65G2-7AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ 95 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 60.6247

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V95 A26 mOhms- 10 V , + 22 V1.9 V162 nC- 55 C+ 175 C360 WEnhancementAEC - Q101 
NTBG020N120SC1


SiC MOSFETs SIC MOS 20MW 1200V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 60.6579

Multiples of: 800

SMD/SMT N - Channel1 Channel1.2 kV98 A28 mOhms- 15 V , + 25 V4.3 V220 nC- 55 C+ 175 C468 WEnhancement EliteSiC
SCTWA90N65G2V-4


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ 119 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 62.7546

Multiples of: 1

Through Hole N - Channel1 Channel650 V119 A24 mOhms- 10 V , + 22 V5 V157 nC- 55 C+ 200 C565 WEnhancement  
NVHL020N120SC1


SiC MOSFETs 20MW 1200V
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ON Semiconductor 0
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AUD 64.2247

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV103 A28 mOhms- 15 V , + 25 V4.3 V203 nC- 55 C+ 175 C535 WEnhancementAEC - Q101EliteSiC
NVHL080N120SC1


SiC MOSFETs SIC MOS 80MW 1200 V 80 mOhms 44A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 69.5661

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV31 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C178 WEnhancementAEC - Q101EliteSiC
SCTW60N120G2


HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 73.8148

Multiples of: 1

                
SCTW70N120G2V


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ 91 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 74.1162

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV91 A21 mOhms- 10 V , + 22 V4.9 V150 nC- 55 C+ 200 C547 WEnhancement  
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