SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NTH4L020N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

203
Ships to you
between Fri. 14 Nov to Thu. 20 Nov

November 2025

November 2025
	S	M	T	W	T	F	S
44	26	27	28	29	30	31	1
45	2	3	4	5	6	7	8
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47	16	17	18	19	20	21	22
48	23	24	25	26	27	28	29
49	30	1	2	3	4	5	6

AUD 11.5329

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

102 A

28 mOhms

- 15 V , + 25 V

4.3 V

220 nC

- 55 C

+ 175 C

510 W

Enhancement

EliteSiC

NVHL020N090SC1

SiC MOSFETs 20MOHM 900V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
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17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 41.8192

Multiples of: 1

Through Hole

N - Channel

1 Channel

900 V

118 A

28 mOhms

- 8 V , + 22 V

4.3 V

196 nC

- 55 C

+ 175 C

503 W

Enhancement

AEC - Q101

EliteSiC

NTBG020N090SC1

SiC MOSFETs SIC MOS 20MOHM 900V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
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17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 42.3429

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

900 V

112 A

28 mOhms

- 8 V , + 22 V

4.3 V

200 nC

- 55 C

+ 175 C

477 W

Enhancement

EliteSiC

SCTW40N120G2VAG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
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17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 45.3696

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V , + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC - Q101

SCTWA70N120G2V-4

HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
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17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 46.4879

Multiples of: 1

SCTW100N65G2AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
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17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 47.8878

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

100 A

69 mOhms

- 10 V , + 22 V

5 V

162 nC

- 55 C

+ 200 C

420 W

Enhancement

AEC - Q101

NVBG045N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 48.4808

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

62 A

50 mOhms

- 8 V , + 22 V

4.3 V

105 nC

- 55 C

+ 175 C

242 W

Enhancement

EliteSiC

IV1Q07015T4G

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 55.2478

Multiples of: 1

NVBG020N090SC1

SiC MOSFETs 20MOHM 900V
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 55.566

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

900 V

112 A

28 mOhms

- 8 V , + 22 V

4.3 V

200 nC

- 55 C

+ 175 C

477 W

Enhancement

AEC - Q101

EliteSiC

SCTWA35N65G2V-4

HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026