SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NTC040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 34.75

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

NTCTR028N170M1

SiC MOSFETs SIC MOS TNR 28MOHM 1700V M1
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 34.781

Multiples of: 1

IV1Q12030T4G

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 34.9504

Multiples of: 1

SCTL35N65G2V

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 36.2959

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

40 A

67 mOhms

- 10 V , + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

SCT4013DRC15

SiC MOSFETs TO247 750V 105A N-CH SIC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 37.8871

Multiples of: 1

Through Hole

N - Channel

1 Channel

750 V

105 A

13 mOhms

- 4 V , + 21 V

4.8 V

170 nC

+ 175 C

312 W

Enhancement

NVHL080N120SC1A

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 37.3755

Multiples of: 30

Through Hole

N - Channel

1 Channel

1.2 kV

31 A

110 mOhms

- 15 V , + 25 V

4.3 V

56 nC

- 55 C

+ 175 C

178 W

Enhancement

AEC - Q101

EliteSiC

IXSJ80N120R1K

SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 35.5143

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

85 A

23.4 mOhms

21 V

4.8 V

155 nC

- 40 C

+ 150 C

223.2 W

Enhancement

SCT2080KEHRC11

SiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 39.074

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

40 A

80 mOhms

- 6 V , + 22 V

1.6 V

106 nC

- 55 C

+ 175 C

262 W

Enhancement

AEC - Q101

SCTWA70N120G2V-4

HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 39.3936

Multiples of: 1

SCTW100N65G2AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

November 2026