SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NVBG045N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
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AUD 48.4808

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

62 A

50 mOhms

- 8 V , + 22 V

4.3 V

105 nC

- 55 C

+ 175 C

242 W

Enhancement

EliteSiC

C2M0080120D

SiC MOSFETs ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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32	2	3	4	5	6	7	8

AUD 48.7778

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

31.6 A

98 mOhms

- 5 V , + 20 V

4 V

71 nC

- 55 C

+ 150 C

208 W

Enhancement

AIMZH120R010M1TXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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AUD 49.5

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

202 A

8.7 mOhms

- 5 V , + 23 V

5.1 V

178 nC

- 55 C

+ 175 C

750 W

Enhancement

CoolSiC

IV1Q07015T4G

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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AUD 55.2478

Multiples of: 1

NVBG020N090SC1

SiC MOSFETs 20MOHM 900V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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32	2	3	4	5	6	7	8

AUD 55.566

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

900 V

112 A

28 mOhms

- 8 V , + 22 V

4.3 V

200 nC

- 55 C

+ 175 C

477 W

Enhancement

AEC - Q101

EliteSiC

SCTWA35N65G2V-4

HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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AUD 55.984

Multiples of: 1

MSC400SMA330B4

SiC MOSFETs MOSFET SIC 3300 V 400 mOhm TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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AUD 57.5794

Multiples of: 1

Through Hole

N - Channel

1 Channel

3.3 kV

11 A

400 mOhms

- 10 V , + 23 V

2.97 V

37 nC

- 55 C

+ 150 C

131 W

Enhancement

IMW120R007M1HXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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AUD 60.273

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

225 A

9.9 mOhms

- 5 V , + 20 V

5.2 V

220 nC

- 55 C

+ 175 C

750 W

Enhancement

SCTH100N65G2-7AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ 95 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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32	2	3	4	5	6	7	8

AUD 60.6247

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

95 A

26 mOhms

- 10 V , + 22 V

1.9 V

162 nC

- 55 C

+ 175 C

360 W

Enhancement

AEC - Q101

NTBG020N120SC1

SiC MOSFETs SIC MOS 20MW 1200V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026