SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NVHL040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

198
Ships to you
between Wed. 20 May to Fri. 22 May

May 2026

May 2026
	S	M	T	W	T	F	S
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9
20	10	11	12	13	14	15	16
21	17	18	19	20	21	22	23
22	24	25	26	27	28	29	30
23	31	1	2	3	4	5	6

AUD 27.9871

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

SCTWA50N120

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 32.8358

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

65 A

52 mOhms

- 10 V , + 25 V

1.8 V

122 nC

- 55 C

+ 200 C

318 W

Enhancement

HiP247

C2M0080120D

SiC MOSFETs ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 33.8115

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

31.6 A

98 mOhms

- 5 V , + 20 V

4 V

71 nC

- 55 C

+ 150 C

208 W

Enhancement

SC013N120TCL

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 34.161

Multiples of: 1

C3M0025065D

SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 34.6523

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

97 A

25 mOhms

- 8 V , + 19 V

3.6 V

108 nC

- 40 C

+ 175 C

326 W

Enhancement

NTC040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 34.75

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

NTCTR028N170M1

SiC MOSFETs SIC MOS TNR 28MOHM 1700V M1
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 34.781

Multiples of: 1

IV1Q12030T4G

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 34.9504

Multiples of: 1

SCTL35N65G2V

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 36.2959

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

40 A

67 mOhms

- 10 V , + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

SCT4013DRC15

SiC MOSFETs TO247 750V 105A N-CH SIC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

October 2026