SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NVH4L025N065SC1

SiC MOSFETs Silicon Carbide MOSFET, N-Channel - EliteSiC ,21mohm, 650V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 29.5114

Multiples of: 450

Through Hole

N - Channel

1 Channel

650 V

99 A

28.5 mOhms

- 8 V , + 22 V

4.3 V

164 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

AIMW120R060M1HXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 30.1557

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

36 A

60 mOhms

- 7 V , + 23 V

5.7 V

31 nC

- 55 C

+ 175 C

150 mW

Enhancement

CoolSiC

HC3M0021120D

TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 31.1404

Multiples of: 1

DMWSH120H23SM4

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 31.7429

Multiples of: 1

DMWSH120H23SM3

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 31.7429

Multiples of: 1

MSC040SMA120B

SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 31.791

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

62 A

50 mOhms

- 10 V , + 25 V

1.8 V

140 nC

- 55 C

+ 175 C

311 W

Enhancement

SCTWA50N120

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 32.8358

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

65 A

52 mOhms

- 10 V , + 25 V

1.8 V

122 nC

- 55 C

+ 200 C

318 W

Enhancement

HiP247

IMDQ65R007M2HXUMA1

SiC MOSFETs SILICON CARBIDE MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 33.33

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

196 A

8.5 mOhms

- 7 V , + 23 V

5.6 V

179 nC

- 55 C

+ 175 C

937 W

Enhancement

SC013N120TCL

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 34.161

Multiples of: 1

C3M0025065D

SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

0
6 to 16 Weeks

February 2027