SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

IXSJ80N120R1K

SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

0
6 to 16 Weeks

April 2026

April 2026
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AUD 35.846

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

85 A

23.4 mOhms

21 V

4.8 V

155 nC

- 40 C

+ 150 C

223.2 W

Enhancement

SCTWA50N120

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
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AUD 36.1706

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

65 A

52 mOhms

- 10 V , + 25 V

1.8 V

122 nC

- 55 C

+ 200 C

318 W

Enhancement

HiP247

NVBG040N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L SiC MOSFET 1200 V 40 mohm M3S Series in D2PAK-7LD package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
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AUD 36.2215

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

49 A

40.5 mOhms

- 8 V , + 22 V

3.22 V

74.5 nC

- 55 C

+ 175 C

297 W

Enhancement

EliteSiC

SCTL35N65G2V

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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AUD 36.2959

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

40 A

67 mOhms

- 10 V , + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

NVHL040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
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AUD 36.9041

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

NVHL080N120SC1A

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
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AUD 37.3755

Multiples of: 30

Through Hole

N - Channel

1 Channel

1.2 kV

31 A

110 mOhms

- 15 V , + 25 V

4.3 V

56 nC

- 55 C

+ 175 C

178 W

Enhancement

AEC - Q101

EliteSiC

SP90N120CTK

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup

0
6 to 16 Weeks

April 2026

April 2026
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AUD 38.7424

Multiples of: 1

SCT2080KEHRC11

SiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

April 2026

April 2026
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AUD 39.074

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

40 A

80 mOhms

- 6 V , + 22 V

1.6 V

106 nC

- 55 C

+ 175 C

262 W

Enhancement

AEC - Q101

NTH4L022N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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19	3	4	5	6	7	8	9

AUD 40.1731

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

68 A

30 mOhms

- 10 V , + 22 V

4.4 V

151 nC

- 55 C

+ 175 C

352 W

Enhancement

EliteSiC

NVHL060N090SC1

SiC MOSFETs 60MOHM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026