SiC MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCTH90N65G2V-7


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ TJ = 25C)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 12356
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AUD 29.0557
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V90 A26 mOhms- 10 V , + 22 V1.9 V157 nC- 55 C+ 175 C330 WEnhancement  
IMTA65R020M2HXTMA1


SiC MOSFETs SILICON CARBIDE MOSFET
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Infineon 10023
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AUD 11.6757
Multiples of: 1

SMD/SMT N - Channel1 Channel  20 mOhms      Enhancement CoolSiC
IMBG120R234M2HXTMA1


SiC MOSFETs Y
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Infineon 4957
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AUD 3.1687
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV8.1 A233.9 mOhms- 7 V , + 20 V5.1 V7.9 nC- 55 C+ 175 C80 WEnhancement  
IMBG120R140M1HXTMA1


N-Channel 1.2kV 18A (Tc) 107W (Tc) Surface Mount PG-TO263-7-12
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 3728
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AUD 4.8871
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV18 A189 mOhms- 7 V , + 23 V5.7 V13.4 nC- 55 C+ 175 C107 WEnhancement CoolSiC
NTHL023N065M3S


SiC MOSFETs SIC MOS TO247-3L 23MOHM 650V M3S
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ON Semiconductor 3624
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AUD 9.8843
Multiples of: 1

Through Hole N - Channel1 Channel650 V40 A18 mOhms- 8 V , + 22 V4 V262 nC- 55 C+ 175 C263 WEnhancement  
AIMZH120R010M1TXKSA1


SiC MOSFETs Y
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Infineon 2758
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AUD 34.2414
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV202 A8.7 mOhms- 5 V , + 23 V5.1 V178 nC- 55 C+ 175 C750 WEnhancement CoolSiC
C3M0120065J


SiC MOSFETs SiC, MOSFET, 120mohm, 650V, TO-263-7, Industrial
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Wolfspeed 2697
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AUD 8.8846
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V21 A120 mOhms- 4 V , + 15 V3.6 V26 nC- 40 C+ 175 C86 WEnhancement  
SCT3120AW7TL


SiC MOSFETs 650V 21A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
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ROHM 2680
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AUD 11.22
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V21 A156 mOhms- 4 V , + 22 V5.6 V38 nC-+ 175 C100 WEnhancement  
G3R60MT07K


SiC MOSFETs 750V 60mohm TO-247-4 G3R SiC MOSFET
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GeneSiC Semiconductor 2522
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AUD 13.1843
Multiples of: 1

Through Hole N - Channel1 Channel750 V37 A60 mOhms- 5 V , + 15 V2.5 V47 nC- 55 C+ 175 C127 WEnhancement  
IMBG120R220M1HXTMA1


N-Channel 1.2kV 13A (Tc) 83W (Tc) Surface Mount PG-TO263-7-12
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 2426
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AUD 4.0543
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV13 A294 mOhms- 7 V , + 23 V5.7 V9.4 nC- 55 C+ 175 C83 WEnhancement CoolSiC
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