SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NTH4L020N090SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

2182
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April 2026

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AUD 28.7149

Multiples of: 1

Through Hole

N - Channel

1 Channel

900 V

118 A

28 mOhms

- 8 V , + 22 V

4.3 V

196 nC

- 55 C

+ 175 C

484 W

Enhancement

EliteSiC

NTH4L160N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

2096
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AUD 8.406

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

17.3 A

224 mOhms

- 15 V , + 25 V

4.3 V

34 nC

- 55 C

+ 175 C

111 W

Enhancement

EliteSiC

IMTA65R033M2HXTMA1

SiC MOSFETs CoolSiC MOSFET 650 V G2
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Infineon

1973
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AUD 7.2567

Multiples of: 1

SMD/SMT

N - Channel

650 V

68 A

41 mOhms

- 7 V to + 23 V

5.6 V

34 nC

- 55 C

+ 175 C

315 W

Enhancement

CoolSiC

SCT4026DW7TL

SiC MOSFETs TO263 750V 51A N-CH SIC
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ROHM

1947
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AUD 16.0731

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

750 V

51 A

26 mOhms

- 4 V , + 21 V

4.8 V

94 nC

+ 175 C

150 W

Enhancement

NTBL060N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL
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ON Semiconductor

1923
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AUD 7.5358

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

46 A

70 mOhms

- 8 V , + 22.6 V

4.3 V

74 nC

- 55 C

+ 170 C

170 W

Enhancement

EliteSiC

IMT65R050M2HXUMA1

SiC MOSFETs SILICON CARBIDE MOSFET
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Infineon

1920
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AUD 4.991

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

48.1 A

62 mOhms

- 7 V , + 23 V

5.6 V

22 nC

- 55 C

+ 175 C

237 W

Enhancement

NVBG080N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm , 1200 V, M1, D2PAK-7L
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ON Semiconductor

1913
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AUD 10.1955

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

30 A

110 mOhms

- 15 V , + 25 V

4.3 V

56 nC

- 55 C

+ 175 C

179 W

Enhancement

AEC - Q101

EliteSiC

AIMCQ120R040M1TXTMA1

SiC MOSFETs SIC_DISCRETE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

1885
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AUD 11.0328

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

61 A

50 mOhms

- 10 V , + 25 V

5.1 V

43 nC

- 55 C

+ 175 C

341 W

Enhancement

CoolSiC

IMLT65R015M2HXTMA1

SiC MOSFETs Y
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Infineon

1485
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AUD 13.8403

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

15 mOhms

Enhancement

CoolSiC

G3R350MT12D

SiC MOSFETs 1200V 350mohm TO-247-3 G3R SiC MOSFET
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GeneSiC Semiconductor

1164
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April 2026