SiC MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT4026DW7TL


SiC MOSFETs TO263 750V 51A N-CH SIC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 1947
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AUD 15.3843
Multiples of: 1

SMD/SMT N - Channel1 Channel750 V51 A26 mOhms- 4 V , + 21 V4.8 V94 nC + 175 C150 WEnhancement  
NTBL060N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1923
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AUD 7.3071
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V46 A70 mOhms- 8 V , + 22.6 V4.3 V74 nC- 55 C+ 170 C170 WEnhancement EliteSiC
NTBL075N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1909
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AUD 6.0814
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V37 A85 mOhms- 8 V , + 22.6 V4.3 V59 nC- 55 C+ 170 C139 WEnhancement EliteSiC
IMTA65R026M2HXTMA1


SiC MOSFETs CoolSiC MOSFET 750 V G2
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Infineon 1908
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AUD 8.8471
Multiples of: 1

SMD/SMT N - Channel 650 V79 A33 mOhms- 7 V to + 23 V5.6 V42 nC- 55 C+ 175 C357 WEnhancement CoolSiC
NVBG080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm , 1200 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1907
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AUD 9.8843
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV30 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C179 WEnhancementAEC - Q101EliteSiC
IMT40R036M2HXTMA1


SiC MOSFETs SIC-MOS
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Infineon 1891
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AUD 4.8243
Multiples of: 1

SMD/SMT N - Channel1 Channel400 V50 A52.5 mOhms- 10 V , + 25 V4.5 V26 nC- 55 C+ 175 C167 WEnhancement  
SCT4045DW7TL


SiC MOSFETs TO263 750V 31A N-CH SIC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 1887
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AUD 9.4129
Multiples of: 1

SMD/SMT N - Channel1 Channel750 V31 A45 mOhms- 4 V , + 21 V4.8 V63 nC + 175 C93 WEnhancement  
G3F25MT06L-TR


SiC MOSFETs 650V 20mohm TO-LL G3F SiC MOSFET
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GeneSiC Semiconductor 1855
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AUD 18.2129
Multiples of: 1

SMD/SMT N - Channel 650 V 20 mOhms      Enhancement  
IPT60R016CM8XTMA1


SiC MOSFETs HIGH POWER_NEW
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Infineon 1825
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AUD 13.97
Multiples of: 1

SMD/SMT N - Channel1 Channel600 V142 A16 mOhms- 20 V , + 20 V4.7 V171 nC- 55 C+ 150 C694 WEnhancement CoolMOS
AIMZH120R010M1TXKSA1


SiC MOSFETs Y
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Infineon 1780
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AUD 34.2414
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV202 A8.7 mOhms- 5 V , + 23 V5.1 V178 nC- 55 C+ 175 C750 WEnhancement CoolSiC
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