SiC MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTH4L160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 2088
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AUD 7.9357
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV17.3 A224 mOhms- 15 V , + 25 V4.3 V34 nC- 55 C+ 175 C111 WEnhancement EliteSiC
AIMZH120R010M1TXKSA1


SiC MOSFETs Y
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Infineon 2020
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AUD 33.7543
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV202 A8.7 mOhms- 5 V , + 23 V5.1 V178 nC- 55 C+ 175 C750 WEnhancement CoolSiC
Hot IMZ120R045M1XKSA1


SiC MOSFETs Y
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Infineon 1957
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AUD 6.5728
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV52 A59 mOhms- 10 V , + 20 V3.5 V52 nC- 55 C+ 175 C228 WEnhancement CoolSiC
SCT4026DW7TL


SiC MOSFETs TO263 750V 51A N-CH SIC
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ROHM 1947
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AUD 14.2686
Multiples of: 1

SMD/SMT N - Channel1 Channel750 V51 A26 mOhms- 4 V , + 21 V4.8 V94 nC + 175 C150 WEnhancement  
AIMCQ120R020M1TXTMA1


SiC MOSFETs SIC_DISCRETE
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Infineon 1940
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AUD 18.04
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV116 A25 mOhms- 10 V , + 25 V5.1 V82 nC- 55 C+ 175 C577 WEnhancement CoolSiC
NTBL060N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1923
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AUD 7.1971
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V46 A70 mOhms- 8 V , + 22.6 V4.3 V74 nC- 55 C+ 170 C170 WEnhancement EliteSiC
NTBL075N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1909
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AUD 6.0029
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V37 A85 mOhms- 8 V , + 22.6 V4.3 V59 nC- 55 C+ 170 C139 WEnhancement EliteSiC
NVBG080N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm , 1200 V, M1, D2PAK-7L
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ON Semiconductor 1907
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AUD 9.7586
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV30 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C179 WEnhancementAEC - Q101EliteSiC
IMT40R036M2HXTMA1


SiC MOSFETs SIC-MOS
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Infineon 1891
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AUD 4.7614
Multiples of: 1

SMD/SMT N - Channel1 Channel400 V50 A52.5 mOhms- 10 V , + 25 V4.5 V26 nC- 55 C+ 175 C167 WEnhancement  
C2M0280120D


SiC MOSFETs SIC MOSFET 1200V RDS ON 280 mOhm
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Wolfspeed 1750
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AUD 9.5229
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV10 A280 mOhms- 10 V , + 25 V2.8 V5.6 nC- 55 C+ 150 C62.5 WEnhancement Z - FET
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