SiC MOSFETs

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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT4045DW7TL


SiC MOSFETs TO263 750V 31A N-CH SIC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 1887
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AUD 9.2557
Multiples of: 1

SMD/SMT N - Channel1 Channel750 V31 A45 mOhms- 4 V , + 21 V4.8 V63 nC + 175 C93 WEnhancement  
SCT3160KW7TL


SiC MOSFETs 1200V 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 1858
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AUD 10.01
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV17 A208 mOhms- 4 V , + 22 V5.6 V42 nC-+ 175 C100 WEnhancement  
G3F25MT06L-TR


SiC MOSFETs 650V 20mohm TO-LL G3F SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor 1855
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AUD 16.7043
Multiples of: 1

SMD/SMT N - Channel 650 V 20 mOhms      Enhancement  
IMT65R050M2HXUMA1


SiC MOSFETs SILICON CARBIDE MOSFET
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Infineon 1854
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AUD 4.7614
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V48.1 A62 mOhms- 7 V , + 23 V5.6 V22 nC- 55 C+ 175 C237 WEnhancement  
IMCQ120R026M2HXTMA1


SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
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Infineon 1809
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AUD 11.2514
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV82 A67 mOhms- 10 V , + 25 V5.1 V63.4 nC- 55 C+ 175 C405 WEnhancement CoolSiC
C3M0045065L-TR


SiC MOSFETs SiC, MOSFET, 45mO, 650V, TOLL, T&R, Industrial
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Wolfspeed 1751
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AUD 7.6843
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V49 A60 mOhms- 8 V , + 19 V3.6 V59 nC- 40 C+ 175 C164 WEnhancement  
NTHL045N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1747
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AUD 12.3986
Multiples of: 1

Through Hole N - Channel1 Channel650 V66 A50 mOhms- 8 V , + 22 V4.3 V105 nC- 55 C+ 175 C291 WEnhancement EliteSiC
IMLT65R020M2HXTMA1


SiC MOSFETs SILICON CARBIDE MOSFET
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Infineon 1713
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AUD 10.4343
Multiples of: 1

SMD/SMT N - Channel1 Channel650 V 20 mOhms      Enhancement CoolSiC
AIMCQ120R060M1TXTMA1


SiC MOSFETs Tailored to address OBC/DC-DC applications for 800V Automotive architecture
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Infineon 1466
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AUD 7.9043
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV44 A75 mOhms- 10 V , + 25 V5.1 V32 nC- 55 C+ 175 C259 WEnhancement CoolSiC
AIMCQ120R040M1TXTMA1


SiC MOSFETs SIC_DISCRETE
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Infineon 1208
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AUD 10.5757
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV61 A50 mOhms- 10 V , + 25 V5.1 V43 nC- 55 C+ 175 C341 WEnhancement CoolSiC
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