SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

IV1Q12050D7Z

TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

April 2026

April 2026
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AUD 24.0917

Multiples of: 1

IV1Q12080T3Z

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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AUD 24.5229

Multiples of: 1

HC1M40120D

TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

April 2026

April 2026
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AUD 24.612

Multiples of: 1

SCTW35N65G2VAG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
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AUD 25.004

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

45 A

67 mOhms

- 10 V , + 22 V

5 V

73 nC

- 55 C

+ 200 C

240 W

Enhancement

AEC - Q101

IV1Q12050T4Z

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

April 2026

April 2026
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AUD 25.1597

Multiples of: 1

NVH4L060N090SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 60 mohm, 900 V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
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AUD 25.2499

Multiples of: 1

Through Hole

N - Channel

1 Channel

900 V

46 A

84 mOhms

- 10 V , + 19 V

4.3 V

87 nC

- 55 C

+ 175 C

221 W

Enhancement

EliteSiC

NSF030120D7A0J

SiC MOSFETs NSF030120D7A0/SOT8070/TO263-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia

0
6 to 16 Weeks

April 2026

April 2026
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AUD 25.7016

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

67 A

30 mOhms

- 10 V , + 22 V

2.9 V

113 nC

- 55 C

+ 175 C

306 W

Enhancement

SCT3030ARC15

SiC MOSFETs 650V 70A 30mO NCH SIC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

April 2026

April 2026
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AUD 25.7889

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

70 A

30 mOhms

- 4 V , + 22 V

5.6 V

104 nC

+ 175 C

262 W

Enhancement

SCT1000N170

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
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14	29	30	31	1	2	3	4
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AUD 25.8846

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

6 A

1 Ohms

- 10 V , + 25 V

2.1 V

14 nC

- 55 C

+ 200 C

120 W

Enhancement

G2R1000MT33J-TR

SiC MOSFETs 3300V 1000mohm TO-263-7 G2R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor

0
6 to 16 Weeks

April 2026