SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

SCTWA40N120G2V-4

HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 25.8066

Multiples of: 1

SCT1000N170

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 25.8846

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

6 A

1 Ohms

- 10 V , + 25 V

2.1 V

14 nC

- 55 C

+ 200 C

120 W

Enhancement

G2R1000MT33J-TR

SiC MOSFETs 3300V 1000mohm TO-263-7 G2R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 25.9385

Multiples of: 1

ADQ120N040BH

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ANHI

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 26.2422

Multiples of: 1

TW027Z65C,S1F

SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 26.5478

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

58 A

27 mOhms

- 10 V , + 25 V

5 V

65 nC

+ 175 C

156 W

Enhancement

SCTWA35N65G2V

SiC MOSFETs 650 V 45 A 75 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 26.811

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

45 A

67 mOhms

- 10 V , + 22 V

5 V

73 nC

- 55 C

+ 200 C

240 W

Enhancement

NTH4L018N075SC1

SiC MOSFETs SIC MOS TO247-4L 750V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 27.5175

Multiples of: 1

Through Hole

N - Channel

1 Channel

750 V

99 A

18 mOhms

- 8 V , + 22 V

4.3 V

262 nC

- 55 C

+ 175 C

500 W

Enhancement

GC3M0021120K

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 28.0329

Multiples of: 1

NVBG060N090SC1

SiC MOSFETs 60MOHM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 29.0308

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

900 V

44 A

84 mOhms

- 8 V , + 22 V

4.3 V

88 nC

- 55 C

+ 175 C

211 W

Enhancement

AEC - Q101

EliteSiC

GC2M0025120D

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

0
6 to 16 Weeks

July 2026