SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
AIMCQ120R030M1TXTMA1


SiC MOSFETs SIC_DISCRETE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 17.9492

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV78 A38 mOhms- 10 V , + 25 V5.1 V57 nC- 55 C+ 175 C417 WEnhancement CoolSiC
C3M0065090J-TR


SiC MOSFETs G3 SiC MOSFET 900V, 65mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed 0
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AUD 18

Multiples of: 1

SMD/SMT N - Channel1 Channel900 V35 A90 mOhms- 8 V , + 18 V1.8 V30 nC- 55 C+ 150 C113 WEnhancement  
NVBG070N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 18.1937

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV25 A87 mOhms- 10 V , + 22 V4.4 V57 nC- 55 C+ 175 C172 WEnhancement EliteSiC
SCT20N120H


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 18.3943

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV20 A239 mOhms- 10 V , + 25 V3.5 V45 nC- 55 C+ 175 C175 WEnhancement  
LSIC1MO120E0120


SiC MOSFETs 1200 V 120 mOhm SiC Mosfet
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Littelfuse 0
6 to 16 Weeks Calender.png

AUD 18.3981

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV27 A150 mOhms20 v , - 5 V1.8 V80 nC- 55 C+ 150 C139 WEnhancement  
UJ3C120080K3S


SiC MOSFETs 1200V/80mOhms,SICFET,G3,TO247-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Qorvo 0
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AUD 18.5199

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV33 A100 mOhms- 25 V , + 25 V4 V51 nC- 55 C+ 175 C254.2 WEnhancementAEC - Q101SiC FET
IV1Q06060T4G


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip 0
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AUD 18.5753

Multiples of: 1

                
IV1Q06040T4


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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InventChip 0
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AUD 19.3247

Multiples of: 1

                
SC015N065T8L


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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SPS 0
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AUD 19.6314

Multiples of: 1

                
IXSJ43N120R1K


SiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 19.6778

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV46 A47 mOhms21 V4.8 V79 nC- 40 C+ 150 C143.7 WEnhancement  
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