SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

MSC180SMA120B

SiC MOSFETs MOSFET SIC 1200 V 180 mOhm TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 15.04

Multiples of: 1

Through Hole

N - Channel

1.2 kV

180 mOhms

SCTH40N120G2V7AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 15.0904

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

33 A

105 mOhms

- 10 V , + 22 V

5 V

63 nC

- 55 C

+ 175 C

250 W

Enhancement

AEC - Q101

IV1Q06060T3G

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 15.2349

Multiples of: 1

MSC180SMA120S

SiC MOSFETs MOSFET SIC 1200 V 180 mOhm TO-268
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 15.36

Multiples of: 1

N - Channel

1.2 kV

180 mOhms

MSC060SMA070S

SiC MOSFETs MOSFET SIC 700 V 60 mOhm TO-268
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 15.46

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

700 V

37 A

69 mOhms

- 10 V , + 23 V

1.9 V

56 nC

- 55 C

+ 175 C

130 W

Enhancement

IMYH200R100M1HXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 15.5257

Multiples of: 1

Through Hole

N - Channel

1 Channel

2 kV

26 A

131 mOhms

- 10 V , + 23 V

3.5 V

55 nC

- 55 C

+ 150 C

217 W

Enhancement

CoolSIC

HC1M30065D

TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 15.552

Multiples of: 1

IMZ120R140M1HXKSA1

N-Channel 1200 V 19A (Tc) 94W (Tc) Through Hole PG-TO247-4-1
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 15.5938

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

19 A

182 mOhms

- 7 V , + 23 V

5.7 V

13 nC

- 55 C

+ 150 C

94 W

Enhancement

CoolSiC

IV1Q06060T4G

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 15.9681

Multiples of: 1

IV1Q12080T3

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

February 2027