SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

IV1Q12160T4

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

April 2026

April 2026
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AUD 13.8529

Multiples of: 1

SC032N120T8L

TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS

0
6 to 16 Weeks

April 2026

April 2026
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AUD 14.0869

Multiples of: 1

IV1Q12080T4Z

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

April 2026

April 2026
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AUD 14.2485

Multiples of: 1

NVH4L160N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
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AUD 14.2611

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

17.3 A

224 mOhms

- 15 V , + 25 V

4.3 V

34 nC

- 55 C

+ 175 C

111 W

Enhancement

EliteSiC

C3M0120090J-TR

SiC MOSFETs G3 SiC MOSFET/ Reel 900V, 120 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

0
6 to 16 Weeks

April 2026

April 2026
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AUD 14.5968

Multiples of: 1

Enhancement

IMZ120R090M1HXKSA1

N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-4-1
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

April 2026

April 2026
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AUD 14.7

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

26 A

117 mOhms

- 7 V , + 23 V

5.7 V

21 nC

- 55 C

+ 150 C

115 W

Enhancement

CoolSiC

SCT10N120AG

SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ TJ = 1
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
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AUD 14.8831

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

12 A

500 mOhms

- 10 V , + 25 V

3.5 V

22 nC

- 55 C

+ 200 C

150 W

Enhancement

AEC - Q101

SCTH40N120G2V7AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
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AUD 15.0904

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

33 A

105 mOhms

- 10 V , + 22 V

5 V

63 nC

- 55 C

+ 175 C

250 W

Enhancement

AEC - Q101

SCT2160KEGC11

SiC MOSFETs 1200V, 22A, THD, Silicon-carbide (SiC) MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

April 2026

April 2026
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14	29	30	31	1	2	3	4
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AUD 15.1976

Multiples of: 1

NTBG080N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026