SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
TW140N120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 10.8743

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A182 mOhms- 10 V , + 25 V5 V24 nC- 55 C+ 175 C107 WEnhancement  
IMW65R020M2HXKSA1


SiC MOSFETs SILICON CARBIDE MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 12.2886

Multiples of: 1

Through Hole N - Channel1 Channel650 V83 A24 mOhms- 7 V , + 23 V5.6 V57 nC- 55 C+ 175 C273 WEnhancement CoolSiC
SCT2280KEGC11


SiC MOSFETs TO247 1.2KV 14A N-CH SIC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 0
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AUD 12.5243

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV14 A364 mOhms- 6 V , + 22 V4 V36 nC + 175 C108 WEnhancement  
SICW025N065H4-BP


SiC MOSFETs SiC MOSFET,TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 12.6746

Multiples of: 1

Through Hole N - Channel1 Channel650 V107 A35 mOhms- 10 V , + 22 V3.1 V275 nC- 55 C+ 175 C375 WEnhancement  
SICW025N065H-BP


SiC MOSFETs SiC MOSFET,TO-247AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 12.8716

Multiples of: 1

Through Hole N - Channel1 Channel650 V107 A35 mOhms- 10 V , + 22 V3.1 V275 nC- 55 C+ 175 C375 WEnhancement  
IV1Q12160T3


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 13.1912

Multiples of: 1

                
IMBG65R048M1HXTMA1


SiC MOSFETs Y
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AUD 13.3533

Multiples of: 1

                
IV1Q12160D7Z


TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 13.3843

Multiples of: 1

                
IV1Q12080T4


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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AUD 13.4224

Multiples of: 1

                
MSC090SMA070S


SiC MOSFETs MOSFET SIC 700 V 90 mOhm TO-268
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 13.6

Multiples of: 1

SMD/SMT N - Channel1 Channel700 V25 A111 mOhms- 10 V , + 23 V1.9 V38 nC- 55 C+ 175 C91 WEnhancement  
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