SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

UF3C170400K3S

SiC MOSFETs 1700V/400mOhms,SICFET,G3,TO247-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Qorvo

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
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31	26	27	28	29	30	31	1
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AUD 9.0791

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

7.6 A

1.07 Ohms

- 25 V , + 25 V

6 V

27.5 nC

- 55 C

+ 175 C

100 W

Enhancement

AEC - Q101

SiC FET

IV2Q171R0D7Z

TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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31	26	27	28	29	30	31	1
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AUD 9.1176

Multiples of: 1

SP35N120CTF

TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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AUD 9.1832

Multiples of: 1

NTHL040N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 9.4146

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

51 A

52 mOhms

- 10 V , + 22 V

4.4 V

70 nC

- 55 C

+ 175 C

329 W

Enhancement

EliteSiC

SCT4045DWAHRTL

SiC MOSFETs TO263 750V 31A N-CH SIC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 9.4984

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

750 V

31 A

59 mOhms

- 4 V , + 21 V

4.8 V

63 nC

+ 175 C

93 W

Enhancement

IMW120R220M1HXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 9.5589

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

13 A

289 mOhms

- 7 V , + 23 V

5.7 V

8.5 nC

- 55 C

+ 150 C

75 W

Enhancement

CoolSiC

IMZA65R033M2HXKSA1

SiC MOSFETs CoolSiC MOSFET 650 V, 33 mohm G2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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AUD 9.7429

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

53 A

41 mOhms

- 10 V , + 25 V

5.6 V

34 nC

- 55 C

+ 175 C

194 W

Enhancement

CoolSiC

GC3M0032120D

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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32	2	3	4	5	6	7	8

AUD 9.7684

Multiples of: 1

NTHL160N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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32	2	3	4	5	6	7	8

AUD 9.7899

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

17 A

224 mOhms

- 15 V , + 25 V

4.3 V

34 nC

- 55 C

+ 175 C

119 W

Enhancement

EliteSiC

DMWSH120H80SM3

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated

0
6 to 16 Weeks

July 2026