SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

GC2M0080120D

TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

621
Ships to you
between Thu. 28 May to Tue. 02 Jun

June 2026

June 2026
	S	M	T	W	T	F	S
23	31	1	2	3	4	5	6
24	7	8	9	10	11	12	13
25	14	15	16	17	18	19	20
26	21	22	23	24	25	26	27
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11

AUD 4.8733

Multiples of: 1

NTHL1000N170M1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 4.1206

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

960 mOhms

- 15 V , + 20 V

4.3 V

13.9 nC

- 55 C

+ 175 C

Enhancement

EliteSiC

ADP120N080G2

TO-220 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ANHI

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 4.1461

Multiples of: 1

IMBG120R220M1HXTMA1

N-Channel 1.2kV 13A (Tc) 83W (Tc) Surface Mount PG-TO263-7-12
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 4.0071

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

13 A

294 mOhms

- 7 V , + 23 V

5.7 V

9.4 nC

- 55 C

+ 175 C

83 W

Enhancement

CoolSiC

SCT10N120

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 4.36

Multiples of: 30

Through Hole

N - Channel

1 Channel

1200 V

12 A

500 mOhms

25 V

1.8 V

22 nC

- 55 C

+ 200 C

150 W

Enhancement

Hip247â ¢

SC160N120T8L

TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 4.7079

Multiples of: 1

C3M0280090D

SiC MOSFETs G3 SiC MOSFET 900V, 280mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 4.7911

Multiples of: 450

Through Hole

N - Channel

1 Channel

900 V

11.5 A

280 mOhms

2.1 V

9.5 nC

- 55 C

+ 150 C

54 W

Enhancement

IMBG120R140M1HXTMA1

N-Channel 1.2kV 18A (Tc) 107W (Tc) Surface Mount PG-TO263-7-12
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 4.8243

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

18 A

189 mOhms

- 7 V , + 23 V

5.7 V

13.4 nC

- 55 C

+ 175 C

107 W

Enhancement

CoolSiC

IMBG65R083M1HXTMA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 4.7771

Multiples of: 1000

SMD/SMT

N - Channel

1 Channel

650 V

28 A

111 mOhms

- 5 V , + 23 V

5.7 V

44 nC

- 55 C

+ 175 C

126 W

Enhancement

CoolSiC

IMWH170R450M1XKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

October 2026