SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NVBG040N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, D2PAK?7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 4.3389

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV60 A56 mOhms- 15 V , + 25 V4.3 V106 nC- 55 C+ 175 C357 WEnhancement EliteSiC
NVBG1000N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1
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between Thu. 01 Oct to Mon. 05 Oct
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AUD 5.6729

Multiples of: 1

SMD/SMT N - Channel1 Channel1.7 kV4.3 A1.43 Ohms- 15 V , + 25 V3.2 V14 nC- 55 C+ 175 C25 WEnhancement EliteSiC
IMBF170R450M1XTMA1


SiC MOSFETs Y
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Infineon 1
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 7.0347

Multiples of: 1

SMD/SMT N - Channel1 Channel1.7 kV9.8 A450 mOhms- 10 V , + 20 V4.5 V11 nC- 55 C+ 175 C107 WEnhancement CoolSiC
C3M0045065J1-TR


SiC MOSFETs SiC, MOSFET 45mohm, 650V TO-263-7XL, T&R, Industrial
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Wolfspeed 1
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between Thu. 01 Oct to Mon. 05 Oct
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AUD 7.6843

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SMD/SMT N - Channel1 Channel650 V47 A60 mOhms- 8 V , + 19 V3.6 V61 nC- 40 C+ 150 C147 WEnhancement  
NVH4L022N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1
Ships to you
between Fri. 09 Oct to Wed. 14 Oct
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AUD 9.3883

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV68 A30 mOhms- 10 V , + 22 V4.4 V151 nC- 55 C+ 175 C352 WEnhancement EliteSiC
SCT055W65G3-4AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 1
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between Thu. 01 Oct to Mon. 05 Oct
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AUD 11.66

Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A72 mOhms- 18 V , + 18 V4.2 V32 nC- 55 C+ 200 C210 WEnhancement  
C3M0120090J-TR


SiC MOSFETs G3 SiC MOSFET/ Reel 900V, 120 mOhm
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Wolfspeed 1
Ships to you
between Fri. 09 Oct to Wed. 14 Oct
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AUD 14.581

Multiples of: 1

             Enhancement  
C2M0080120D


SiC MOSFETs ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
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Wolfspeed 1
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 48.9552

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV31.6 A98 mOhms- 5 V , + 20 V4 V71 nC- 55 C+ 150 C208 WEnhancement  
SCTW90N65G2V


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ TJ = 25 C)
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STMicroelectronics 1
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 74.006

Multiples of: 1

Through Hole N - Channel1 Channel650 V90 A25 mOhms- 10 V , + 22 V1.9 V157 nC- 55 C+ 200 C390 WEnhancement  
SCTWA90N65G2V


TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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STMicroelectronics 1
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between Fri. 09 Oct to Wed. 14 Oct
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AUD 75.0129

Multiples of: 1

                
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