SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

SC102N170T8L

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 3.2136

Multiples of: 1

NTBG1000N170M1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 3.5619

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.7 kV

4.3 A

960 mOhms

- 15 V , + 25 V

4.3 V

13.9 nC

- 55 C

+ 175 C

51 W

Enhancement

EliteSiC

NTHL1000N170M1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 4.1206

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

960 mOhms

- 15 V , + 20 V

4.3 V

13.9 nC

- 55 C

+ 175 C

Enhancement

EliteSiC

SP50N120CTF

TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 4.1644

Multiples of: 1

AIMZH120R160M1TXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 4.2271

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

17 A

160 mOhms

- 5 V , + 23 V

5.1 V

14 nC

- 55 C

+ 175 C

109 W

Enhancement

CoolSiC

IMBG120R116M2HXTMA1

SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 4.2586

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

21.2 A

115.7 mOhms

- 7 V , + 20 V

5.1 V

14.4 nC

- 55 C

+ 175 C

123 W

Enhancement

SC160N120T8L

TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 4.7079

Multiples of: 1

C3M0280090D

SiC MOSFETs G3 SiC MOSFET 900V, 280mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 4.7911

Multiples of: 450

Through Hole

N - Channel

1 Channel

900 V

11.5 A

280 mOhms

2.1 V

9.5 nC

- 55 C

+ 150 C

54 W

Enhancement

MSC090SMA070B

SiC MOSFETs MOSFET SIC 700 V 90 mOhm TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

February 2027

February 2027
	S	M	T	W	T	F	S
6	31	1	2	3	4	5	6
7	7	8	9	10	11	12	13
8	14	15	16	17	18	19	20
9	21	22	23	24	25	26	27
10	28	1	2	3	4	5	6
11	7	8	9	10	11	12	13

AUD 5.2425

Multiples of: 30

Through Hole

N - Channel

1 Channel

700 V

28 A

111 mOhms

- 10 V , + 23 V

1.9 V

38 nC

- 55 C

+ 175 C

90 W

Enhancement

IMWH170R450M1XKSA1

SiC MOSFETs Y
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

February 2027