SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

IMBG120R078M2HXTMA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
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31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 5.3308

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

29 A

78.1 mOhms

- 7 V , + 20 V

5.1 V

20.6 nC

- 55 C

+ 175 C

158 W

Enhancement

SCT2H12NYTB

SiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 5.3646

Multiples of: 1

Smd/Smt

N - Channel

1 Channel

1700 V

4 A

1.15 Ohms

22 V

1.6 V

14 nC

+ 175 C

44 W

Enhancement

IV1Q12750T3

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 5.5226

Multiples of: 1

IMWH170R450M1XKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 5.5338

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

10 A

390 mOhms

- 10 V , + 20 V

5.7 V

11.7 nC

- 55 C

+ 175 C

111 W

Enhancement

CoolSiC

GC3M0060065K

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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32	2	3	4	5	6	7	8

AUD 5.6835

Multiples of: 1

GP2T080A120H

SiC MOSFETs SiC MOSFET 1200V 80mohm TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SemiQ

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 5.9016

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

35 A

77 mOhms

- 10 V , + 25 V

4 V

61 nC

- 55 C

+ 175 C

188 W

Depletion

HC3M001K170J

TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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AUD 5.9029

Multiples of: 1

G3R350MT12D

N-Channel SiC MOSFET - Vds:1200V - Rds:350ohms - TO-247-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Navitas

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 6.0119

Multiples of: 1

G2R1000MT17D

SiC MOSFETs 1700V 1000mohm TO-247-3 G2R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 6.2683

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

5 A

1 Ohms

- 5 V , + 20 V

4.5 V

11 nC

- 55 C

+ 175 C

44 W

Enhancement

NVBG1000N170M1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026