SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
E4M0015075K1


MOSFETs SiC, MOSFET, 15mohm, 750V, TO-247-4, Automotive, Gen4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed 437
Ships to you
between Tue. 07 Jul to Thu. 09 Jul
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AUD 20.8843

Multiples of: 1

Through Hole N - Channel1 Channel750 V128 A15 mOhms- 8 V , + 19 V3.8 V191 nC- 40 C+ 175 C372 WEnhancement  
AIMZH120R160M1TXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 1
Ships to you
between Tue. 07 Jul to Thu. 09 Jul
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AUD 4.29

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV17 A160 mOhms- 5 V , + 23 V5.1 V14 nC- 55 C+ 175 C109 WEnhancement CoolSiC
NVBG1000N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1
Ships to you
between Tue. 07 Jul to Thu. 09 Jul
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AUD 5.6729

Multiples of: 1

SMD/SMT N - Channel1 Channel1.7 kV4.3 A1.43 Ohms- 15 V , + 25 V3.2 V14 nC- 55 C+ 175 C25 WEnhancement EliteSiC
C3M0045065J1-TR


SiC MOSFETs SiC, MOSFET 45mohm, 650V TO-263-7XL, T&R, Industrial
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed 1
Ships to you
between Tue. 07 Jul to Thu. 09 Jul
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AUD 7.6843

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V47 A60 mOhms- 8 V , + 19 V3.6 V61 nC- 40 C+ 150 C147 WEnhancement  
SP25N120CTK


TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup 0
6 to 16 Weeks Calender.png

AUD 2.4099

Multiples of: 1

                
IMBG65R163M1HXTMA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 3.2214

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V17 A217 mOhms- 5 V , + 23 V5.7 V27 nC- 55 C+ 175 C85 WEnhancement CoolSiC
SC102N170T8L


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS 0
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AUD 3.2136

Multiples of: 1

                
NTBG1000N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 3.5619

Multiples of: 1

SMD/SMT N - Channel1 Channel1.7 kV4.3 A960 mOhms- 15 V , + 25 V4.3 V13.9 nC- 55 C+ 175 C51 WEnhancement EliteSiC
IMWH170R1K0M1XKSA1


SiC MOSFETs SIC DISCRETE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 3.74

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV5.4 A880 mOhms- 10 V , + 20 V5.7 V5.5 nC- 55 C+ 175 C70 WEnhancement CoolSiC
NTHL1000N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 4.1206

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV 960 mOhms- 15 V , + 20 V4.3 V13.9 nC- 55 C+ 175 C Enhancement EliteSiC
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