SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NVBG1000N170M1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

1
Ships to you
between Thu. 20 Nov to Mon. 24 Nov

November 2025

November 2025
	S	M	T	W	T	F	S
44	26	27	28	29	30	31	1
45	2	3	4	5	6	7	8
46	9	10	11	12	13	14	15
47	16	17	18	19	20	21	22
48	23	24	25	26	27	28	29
49	30	1	2	3	4	5	6

AUD 6.2857

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.7 kV

4.3 A

1.43 Ohms

- 15 V , + 25 V

3.2 V

14 nC

- 55 C

+ 175 C

25 W

Enhancement

EliteSiC

C3M0045065J1-TR

SiC MOSFETs SiC, MOSFET 45mohm, 650V TO-263-7XL, T&R, Industrial
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

1
Ships to you
between Thu. 20 Nov to Mon. 24 Nov

November 2025

November 2025
	S	M	T	W	T	F	S
44	26	27	28	29	30	31	1
45	2	3	4	5	6	7	8
46	9	10	11	12	13	14	15
47	16	17	18	19	20	21	22
48	23	24	25	26	27	28	29
49	30	1	2	3	4	5	6

AUD 21.4154

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

47 A

60 mOhms

- 8 V , + 19 V

3.6 V

61 nC

- 40 C

+ 150 C

147 W

Enhancement

SCTWA20N120

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

1
Ships to you
between Fri. 14 Nov to Thu. 20 Nov

November 2025

November 2025
	S	M	T	W	T	F	S
44	26	27	28	29	30	31	1
45	2	3	4	5	6	7	8
46	9	10	11	12	13	14	15
47	16	17	18	19	20	21	22
48	23	24	25	26	27	28	29
49	30	1	2	3	4	5	6

AUD 24.1778

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

20 A

239 mOhms

- 10 V , + 25 V

3.5 V

45 nC

- 55 C

+ 200 C

175 W

Enhancement

SCTWA30N120

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

1
Ships to you
between Fri. 14 Nov to Thu. 20 Nov

November 2025

November 2025
	S	M	T	W	T	F	S
44	26	27	28	29	30	31	1
45	2	3	4	5	6	7	8
46	9	10	11	12	13	14	15
47	16	17	18	19	20	21	22
48	23	24	25	26	27	28	29
49	30	1	2	3	4	5	6

AUD 53.5662

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

45 A

100 mOhms

- 10 V , + 25 V

3.5 V

105 nC

- 55 C

+ 200 C

270 W

Enhancement

SC102N170T8L

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 3.3229

Multiples of: 1

NTBG1000N170M1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 3.5619

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.7 kV

4.3 A

960 mOhms

- 15 V , + 25 V

4.3 V

13.9 nC

- 55 C

+ 175 C

51 W

Enhancement

EliteSiC

GC2M0160120D

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 3.8451

Multiples of: 1

ADP120N080G2

TO-220 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ANHI

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 3.939

Multiples of: 1

GC2M0160120K

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 4.3346

Multiples of: 1

IMWH170R1K0M1XKSA1

SiC MOSFETs SIC DISCRETE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

April 2026