SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
GC3M0060065K


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC 567
Ships to you
between Thu. 28 May to Tue. 02 Jun
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AUD 5.4284

Multiples of: 1

                
IMW120R045M1XKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 537
Ships to you
between Thu. 14 May to Wed. 20 May
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AUD 18.4841

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV52 A59 mOhms- 10 V , + 20 V3.5 V52 nC- 55 C+ 175 C228 WEnhancement CoolSiC
SICW100N065H4-BP


SiC MOSFETs SiC MOSFET,TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) 0
6 to 16 Weeks Calender.png

AUD 5.3358

Multiples of: 1

Through Hole N - Channel1 Channel650 V32 A130 mOhms- 10 V , + 25 V2.6 V66 nC- 55 C+ 175 C166 WEnhancement  
SCT2H12NYTB


SiC MOSFETs N-Ch 1700V 4A 44W SiC Silicon Carbide
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 0
6 to 16 Weeks Calender.png

AUD 5.3646

Multiples of: 1

Smd/Smt N - Channel1 Channel1700 V4 A1.15 Ohms22 V1.6 V14 nC + 175 C44 WEnhancement  
IV1Q12750T3


TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip 0
6 to 16 Weeks Calender.png

AUD 5.5226

Multiples of: 1

                
IMT65R040M2HXUMA1


SiC MOSFETs SILICON CARBIDE MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 5.6729

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V58.7 A49 mOhms- 7 V , + 23 V5.6 V28 nC- 55 C+ 175 C277 WEnhancement  
IV2Q171R0D7


TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip 0
6 to 16 Weeks Calender.png

AUD 5.6631

Multiples of: 1

                
HC1M320120D


TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 0
6 to 16 Weeks Calender.png

AUD 5.8883

Multiples of: 1

                
G3R350MT12D


N-Channel SiC MOSFET - Vds:1200V - Rds:350ohms - TO-247-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Navitas 0
6 to 16 Weeks Calender.png

AUD 6.0119

Multiples of: 1

                
IMW120R090M1HXKSA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 6.6179

Multiples of: 240

Through Hole N - Channel1 Channel1.2 kV26 A117 mOhms- 7 V , + 23 V5.7 V21 nC- 55 C+ 150 C115 WEnhancement CoolSiC
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