SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NTBL045N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - 33 mohm, 650 V, M2, TOLL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

1332
Ships to you
between Wed. 20 May to Fri. 22 May

May 2026

May 2026
	S	M	T	W	T	F	S
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9
20	10	11	12	13	14	15	16
21	17	18	19	20	21	22	23
22	24	25	26	27	28	29	30
23	31	1	2	3	4	5	6

AUD 9.8843

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

73 A

50 mOhms

- 8 V , + 22 V

4.3 V

105 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

NTBG080N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

545
Ships to you
between Wed. 20 May to Fri. 22 May

May 2026

May 2026
	S	M	T	W	T	F	S
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9
20	10	11	12	13	14	15	16
21	17	18	19	20	21	22	23
22	24	25	26	27	28	29	30
23	31	1	2	3	4	5	6

AUD 10.4343

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

30 A

110 mOhms

- 15 V , + 25 V

4.3 V

56 nC

- 55 C

+ 175 C

179 W

Enhancement

EliteSiC

IMW120R030M1HXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 14.1429

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

56 A

40 mOhms

- 7 V , + 23 V

5.7 V

63 nC

- 55 C

+ 150 C

227 W

Enhancement

CoolSiC

SCT2280KEHRC11

SiC MOSFETs 1200V, 14A, THD, Silicon-carbide (SiC) MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 14.2214

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

14 A

364 mOhms

- 6 V , + 22 V

4 V

36 nC

+ 175 C

108 W

Enhancement

IMYH200R100M1HXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 15.3057

Multiples of: 1

Through Hole

N - Channel

1 Channel

2 kV

26 A

131 mOhms

- 10 V , + 23 V

3.5 V

55 nC

- 55 C

+ 150 C

217 W

Enhancement

CoolSIC

SCT10N120AG

SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ TJ = 1
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 14.8831

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

12 A

500 mOhms

- 10 V , + 25 V

3.5 V

22 nC

- 55 C

+ 200 C

150 W

Enhancement

AEC - Q101

SCTH40N120G2V7AG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 15.0904

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

33 A

105 mOhms

- 10 V , + 22 V

5 V

63 nC

- 55 C

+ 175 C

250 W

Enhancement

AEC - Q101

C3M0015065K

SiC MOSFETs SiC, MOSFET, 15mohm, 650V, TO-247-4, Industrial
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 15.3843

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

120 A

15 mOhms

- 4 V , + 15 V

3.6 V

188 nC

- 40 C

+ 175 C

416 W

Enhancement

IV1Q06060T3G

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 15.2349

Multiples of: 1

SCT2160KEGC11

SiC MOSFETs 1200V, 22A, THD, Silicon-carbide (SiC) MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

October 2026