SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTH4L022N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1493
Ships to you
between Wed. 20 May to Fri. 22 May
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AUD 19.5486

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV68 A30 mOhms- 10 V , + 22 V4.4 V151 nC- 55 C+ 175 C352 WEnhancement EliteSiC
NTBG060N090SC1


SiC MOSFETs SIC MOS 60MOHM 900V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1237
Ships to you
between Wed. 20 May to Fri. 22 May
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AUD 10.9371

Multiples of: 1

SMD/SMT N - Channel1 Channel900 V44 A84 mOhms- 8 V , + 22 V4.3 V88 nC- 55 C+ 175 C211 WEnhancement EliteSiC
NVH4L060N090SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 60 mohm, 900 V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 13
Ships to you
between Wed. 20 May to Fri. 22 May
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AUD 18.8729

Multiples of: 1

Through Hole N - Channel1 Channel900 V46 A84 mOhms- 10 V , + 19 V4.3 V87 nC- 55 C+ 175 C221 WEnhancement EliteSiC
IV1Q12050T4Z


TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip 0
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AUD 25.1597

Multiples of: 1

                
SCT040HU65G3AG


HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 25.3374

Multiples of: 1

                
SCT1000N170


SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 25.8846

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV6 A1 Ohms- 10 V , + 25 V2.1 V14 nC- 55 C+ 200 C120 WEnhancement  
GC3M0021120D


TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC 0
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AUD 27.4161

Multiples of: 1

                
G3R30MT12J-TR


SiC MOSFETs 1200V 30mohm TO-263-7 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor 0
6 to 16 Weeks Calender.png

AUD 28.1239

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV85 A34 mOhms- 15 V , + 15 V2.7 V118 nC- 55 C+ 175 C408 WEnhancement  
TW027Z65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
6 to 16 Weeks Calender.png

AUD 27.0443

Multiples of: 1

Through Hole N - Channel1 Channel650 V58 A27 mOhms- 10 V , + 25 V5 V65 nC + 175 C156 WEnhancement  
SCTW40N120G2VAG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 28.7969

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV36 A100 mOhms- 10 V , + 22 V4.9 V61 nC- 55 C+ 200 C278 WEnhancementAEC - Q101 
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