SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

HC3M0021120D

TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
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30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 29.976

Multiples of: 1

IV1Q12050T3

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
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30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 30.2067

Multiples of: 1

NVH4L040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 30.2466

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

58 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

319 W

Enhancement

EliteSiC

NVBG030N120M3S

SiC MOSFETs SIC MOS D2PAK-7L 30MOHM 1200V M3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 30.2587

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

54 A

39 mOhms

- 10 V , + 22 V

4.4 V

107 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

IMW120R014M1HXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 30.7825

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

127 A

14 mOhms

- 10 V , + 23 V

4.2 V

110 nC

- 55 C

+ 150 C

455 W

Enhancement

NTBG040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 31.8638

Multiples of: 800

SMD/SMT

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

357 W

Enhancement

EliteSiC

SCT040HU65G3AG

HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 32.1572

Multiples of: 1

DMWSH120H23SM4

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 32.4738

Multiples of: 1

NTHL040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

July 2026

July 2026
	S	M	T	W	T	F	S
27	28	29	30	1	2	3	4
28	5	6	7	8	9	10	11
29	12	13	14	15	16	17	18
30	19	20	21	22	23	24	25
31	26	27	28	29	30	31	1
32	2	3	4	5	6	7	8

AUD 32.7438

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

IMZA65R007M2HXKSA1

SiC MOSFETs Y
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

July 2026