SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NVBG020N120SC1

SiC MOSFETs SIC MOS D2PAK-7L 20MOHM 1
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
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AUD 84.4641

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

98 A

28 mOhms

- 15 V , + 25 V

4.3 V

220 nC

- 55 C

+ 175 C

468 W

Enhancement

AEC - Q101

EliteSiC

SCTWA90N65G2V

TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
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AUD 94.4316

Multiples of: 1

NVH4L022N120M3S

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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AUD 104.0391

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

68 A

30 mOhms

- 10 V , + 22 V

4.4 V

151 nC

- 55 C

+ 175 C

352 W

Enhancement

EliteSiC

HC1M15120S

SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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AUD 114.0356

Multiples of: 1

NVBG015N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12mohm, 650V, M2, D2PAK-7L Silicon Carbide MOSFET, N-Channel, 650V, 12 mohm, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
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AUD 115.2586

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

145 A

18 mOhms

- 8 V , + 22 V

4.3 V

283 nC

- 55 C

+ 175 C

500 W

Enhancement

EliteSiC

NVH4L018N075SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 13.5mohm, 750V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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AUD 125.6154

Multiples of: 1

EliteSiC

NVH4L020N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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AUD 139.8391

Multiples of: 450

Through Hole

N - Channel

1 Channel

1.2 kV

102 A

28 mOhms

- 15 V , + 25 V

4.3 V

220 nC

- 55 C

+ 175 C

510 W

Enhancement

EliteSiC

HC2M0045170P

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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AUD 156.321

Multiples of: 1

MSC080SMA330B4

SiC MOSFETs MOSFET SIC 3300 V 80 mOhm TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

April 2026

April 2026
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AUD 206.0246

Multiples of: 1

IV1B12013HA1L

Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

April 2026