SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

SCTWA90N65G2V-4

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ 119 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 68.6656

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

119 A

24 mOhms

- 10 V , + 22 V

5 V

157 nC

- 55 C

+ 200 C

565 W

Enhancement

NTH4L028N170M1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 72

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

81 A

40 mOhms

- 15 V , + 25 V

4.3 V

200 nC

- 55 C

+ 175 C

535 W

Enhancement

EliteSiC

SCTW60N120G2

HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 73.8148

Multiples of: 1

SCTWA90N65G2V

TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 91.3306

Multiples of: 1

HC2M0045170P

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 92.9973

Multiples of: 1

TW015Z120C,S1F

SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 17.4114

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

100 A

15 mOhms

- 10 V , + 25 V

5 V

158 nC

+ 175 C

431 W

Enhancement

HC1M15120S

SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 107.4784

Multiples of: 1

NVBG015N065SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12mohm, 650V, M2, D2PAK-7L Silicon Carbide MOSFET, N-Channel, 650V, 12 mohm, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 123.0192

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

145 A

18 mOhms

- 8 V , + 22 V

4.3 V

283 nC

- 55 C

+ 175 C

500 W

Enhancement

EliteSiC

NVH4L018N075SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 13.5mohm, 750V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 125.6154

Multiples of: 1

EliteSiC

MSC080SMA330B4

SiC MOSFETs MOSFET SIC 3300 V 80 mOhm TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip

0
6 to 16 Weeks

November 2026