SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

SCT040HU65G3AG

HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
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AUD 32.1572

Multiples of: 1

DMWSH120H23SM4

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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AUD 32.4738

Multiples of: 1

NTHL040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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19	3	4	5	6	7	8	9

AUD 32.7438

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

IMZA65R007M2HXKSA1

SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 32.8778

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

210 A

8.5 mOhms

- 18 V , + 18 V

5.6 V

439 nC

- 55 C

+ 175 C

625 W

Enhancement

CoolSiC

SC013N120TCL

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SPS

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
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AUD 34.161

Multiples of: 1

C3M0025065D

SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
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19	3	4	5	6	7	8	9

AUD 34.6523

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

97 A

25 mOhms

- 8 V , + 19 V

3.6 V

108 nC

- 40 C

+ 175 C

326 W

Enhancement

NTC040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, Die
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
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19	3	4	5	6	7	8	9

AUD 34.75

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

SCT3030ALGC11

SiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
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17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 34.8683

Multiples of: 1

Through Hole

N - Channel

1 Channel

650 V

70 A

30 mOhms

22 V

5.6 V

104 nC

- 55 C

+ 175 C

262 W

Enhancement

IV1Q12030T4G

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

April 2026

April 2026
	S	M	T	W	T	F	S
14	29	30	31	1	2	3	4
15	5	6	7	8	9	10	11
16	12	13	14	15	16	17	18
17	19	20	21	22	23	24	25
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9

AUD 34.9504

Multiples of: 1

NTCTR028N170M1

SiC MOSFETs SIC MOS TNR 28MOHM 1700V M1
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

0
6 to 16 Weeks

April 2026