SiC MOSFETs

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Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

IV1Q12050T3

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 24.2186

Multiples of: 1

HC1M40120D

TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 24.3611

Multiples of: 1

SICW028N120A4-BP

SiC MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC)

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 25.0329

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

80 A

30 mOhms

- 5 V , + 22 V

3 V

168 nC

- 55 C

+ 175 C

375 W

Enhancement

IV1Q12050T4Z

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

InventChip

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 25.1597

Multiples of: 1

SCT040HU65G3AG

HU3PAK Silicon Carbide Field Effect Transistor (MOSFET) ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 25.3374

Multiples of: 1

SCT1000N170

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 25.8846

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.7 kV

6 A

1 Ohms

- 10 V , + 25 V

2.1 V

14 nC

- 55 C

+ 200 C

120 W

Enhancement

GC3M0021120D

TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SUPSiC

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 27.4161

Multiples of: 1

G3R30MT12J-TR

SiC MOSFETs 1200V 30mohm TO-263-7 G3R SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GeneSiC Semiconductor

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 28.1239

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

85 A

34 mOhms

- 15 V , + 15 V

2.7 V

118 nC

- 55 C

+ 175 C

408 W

Enhancement

IMDQ65R007M2HXUMA1

SiC MOSFETs SILICON CARBIDE MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

November 2026

November 2026
	S	M	T	W	T	F	S
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7
46	8	9	10	11	12	13	14
47	15	16	17	18	19	20	21
48	22	23	24	25	26	27	28
49	29	30	1	2	3	4	5

AUD 30.9257

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

196 A

8.5 mOhms

- 7 V , + 23 V

5.6 V

179 nC

- 55 C

+ 175 C

937 W

Enhancement

SCTW40N120G2VAG

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

November 2026