SiC MOSFETs

Sorting

Sort Column:

Sort Direction:

Image	Stock Code(▲▼)	Description	Manufacturer	Availability ⓘ (▲▼)	Price(AUD) (Ex. GST)(▲▼)	Enter Qty	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification	Tradename

NVBG060N090SC1

SiC MOSFETs 60MOHM
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

972
Ships to you
between Wed. 20 May to Fri. 22 May

May 2026

May 2026
	S	M	T	W	T	F	S
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9
20	10	11	12	13	14	15	16
21	17	18	19	20	21	22	23
22	24	25	26	27	28	29	30
23	31	1	2	3	4	5	6

AUD 17.8514

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

900 V

44 A

84 mOhms

- 8 V , + 22 V

4.3 V

88 nC

- 55 C

+ 175 C

211 W

Enhancement

AEC - Q101

EliteSiC

NTBG040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

955
Ships to you
between Wed. 20 May to Fri. 22 May

May 2026

May 2026
	S	M	T	W	T	F	S
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9
20	10	11	12	13	14	15	16
21	17	18	19	20	21	22	23
22	24	25	26	27	28	29	30
23	31	1	2	3	4	5	6

AUD 21.0414

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

357 W

Enhancement

EliteSiC

NTHL040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

593
Ships to you
between Wed. 20 May to Fri. 22 May

May 2026

May 2026
	S	M	T	W	T	F	S
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9
20	10	11	12	13	14	15	16
21	17	18	19	20	21	22	23
22	24	25	26	27	28	29	30
23	31	1	2	3	4	5	6

AUD 19.9257

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

60 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

348 W

Enhancement

EliteSiC

NVH4L040N120SC1

SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?4L
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

217
Ships to you
between Wed. 20 May to Fri. 22 May

May 2026

May 2026
	S	M	T	W	T	F	S
18	26	27	28	29	30	1	2
19	3	4	5	6	7	8	9
20	10	11	12	13	14	15	16
21	17	18	19	20	21	22	23
22	24	25	26	27	28	29	30
23	31	1	2	3	4	5	6

AUD 25.41

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

58 A

56 mOhms

- 15 V , + 25 V

4.3 V

106 nC

- 55 C

+ 175 C

319 W

Enhancement

EliteSiC

IMDQ65R007M2HXUMA1

SiC MOSFETs SILICON CARBIDE MOSFET
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 29.7786

Multiples of: 1

SMD/SMT

N - Channel

1 Channel

650 V

196 A

8.5 mOhms

- 7 V , + 23 V

5.6 V

179 nC

- 55 C

+ 175 C

937 W

Enhancement

SCT20N120AG

SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm typ Tj = 15
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 30.5284

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

20 A

239 mOhms

- 20 V , + 20 V

3.5 V

45 nC

- 55 C

+ 200 C

175 W

Enhancement

AEC - Q101

IXSJ80N120R1K

SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-4L
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 31.1284

Multiples of: 1

Through Hole

N - Channel

1 Channel

1.2 kV

85 A

23.4 mOhms

21 V

4.8 V

155 nC

- 40 C

+ 150 C

223.2 W

Enhancement

HC3M0021120D

TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 31.1404

Multiples of: 1

DMWSH120H23SM4

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated

0
6 to 16 Weeks

October 2026

October 2026
	S	M	T	W	T	F	S
40	27	28	29	30	1	2	3
41	4	5	6	7	8	9	10
42	11	12	13	14	15	16	17
43	18	19	20	21	22	23	24
44	25	26	27	28	29	30	31
45	1	2	3	4	5	6	7

AUD 31.3029

Multiples of: 1

DMWSH120H23SM3

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Icon ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated

0
6 to 16 Weeks

October 2026