MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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First...8687888990...
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2300UFB-7B


MOSFET MOSFET BVDSS
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Diodes Incorporated 29100
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AUD 0.1569
Multiples of: 10000

1.78 A20 V360 mOhmsN - Channel     Smd/SmtDFN - 1006 - 3Reel       
FDC6301N


Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
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ON Semiconductor 29100
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AUD 0.1885
Multiples of: 3000

   Dual N Channel               
Si2303CDS-T1-E3


MOSFET 30V 2.7A 2.3W 190mohm @ 10V
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Vishay 29100
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AUD 0.244
Multiples of: 3000

2.7 A30 V190 mOhmsP - Channel 1 V- 55 C+ 150 C2.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V4 nCEnhancement Trenchfet
SISS27DN-T1-GE3


Vishay Semiconductors MOSFET -30V 5.6mOhm10V -50A P-Ch G-III
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Vishay 29100
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AUD 0.4635
Multiples of: 3000

- 50 A- 30 V5.6 mOhmsP - Channel - 1 v to - 2.2 V- 55 C+ 150 C57 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel20 V45 nCEnhancement Trenchfet Power Mosfet
SI7157DP-T1-GE3


MOSFET -20V .0016ohm@-10V -60A P-Ch
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Vishay 29100
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AUD 0.9927
Multiples of: 3000

- 60 A- 20 V1.25 mOhmsP - Channel12 V- 500 mV to - 1.4 V- 55 C+ 150 C104 WSmd/SmtSO - 8Reel   202.5 nC  Trenchfet
TPN2R703NL,L1Q


N-Channel 30 V 45A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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Toshiba 29100
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AUD 1.2119
Multiples of: 5000

45 A30 V3.3 mOhmsn - channel 1.3 v to 2.3 V- 55 C+ 150 C42 Wsmd/smtTSON - 8Reelsi1 channel20 V21 nCenhancement  
IPD200N15N3GATMA1


Infineon Technologies MOSFET
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Infineon 29100
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AUD 1.4377
Multiples of: 2500

50 A150 V20 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V23 nCEnhancement Optimos
STL120N8F7


MOSFET N-channel 80 V, 3.7 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 29100
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AUD 1.6536
Multiples of: 3000

120 A80 V4.4 mOhmsN - Channel 4 V- 55 C+ 175 C140 WSmd/SmtPowerflat - 8 Si1 Channel+/- 20 V60 nCEnhancement Stripfet
FDMS8320L


MOSFET 40V/20V NCh PowerTrench MOSFET
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ON Semiconductor 29100
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AUD 1.9194
Multiples of: 3000

36 A40 V1.1 mOhmsN - Channel  - 55 C+ 150 C104 WSmd/SmtPOWER 56ReelSi1 Channel20 V   Powertrench
STL18N65M5


MOSFET N-CH 650V 0.215Ohm 15A MDmesh V
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STMicroelectronics 29100
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AUD 2.7371
Multiples of: 3000

15 A650 V240 mOhmsN - Channel25 V4 V- 55 C+ 150 C57 WSmd/SmtPowerflat - 8 5X6ReelSi2 Channel25 V31 nC  Mdmesh
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First...8687888990...

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