MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
L2N7002M3T5G


MOSFET N Trench 60V 115mA 2.2V @ 250uA 4 Ω @ 500mA,10V SOT-723 RoHS
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Leshan 31020
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AUD 0.0362
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NTMFS5C612NLT1G


MOSFET NFET SO8FL 60V 219A 1.8MO
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ON Semiconductor 30950
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AUD 0.7637
Multiples of: 1

                   
SQ3419EV-T1_BE3


MOSFET P-CHANNEL 40V D-S
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Vishay 30940
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AUD 0.4731
Multiples of: 1

6.9 A40 V48 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V7.5 nCEnhancement TrenchFET
2N7002W


60V 200mA 1.6Ω@10V 156mW 3V N Channel SOT-323 MOSFETs ROHS
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MSKSEMI 30933
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AUD 0.0199
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BSS84P H6433


Infineon Technologies MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon 30921
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AUD 0.064
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- 170 mA- 60 V8 OhmsP - Channel - 1.5 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT - 23Reel-1 Channel+/- 20 V1 nCEnhancement  
NTMFS5H610NLT1G


MOSFET T8 60V LOW COSS
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ON Semiconductor 30912
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AUD 0.5255
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44 A60 V10 mOhmsN - Channel 1.2 V- 55 C+ 150 C43 WSmd/SmtDFN - 5Cut TapeSi1 Channel20 V13.7 nCEnhancement  
FDS89161LZ


MOSFET PT5 100V Logic Level with Zener
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ON Semiconductor 30722
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AUD 1.0261
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2.7 A100 V105 mOhmsn - channel 1.7 V- 55 C+ 150 C31 Wsmd/smtSOIC - 8Reelsi2 channel20 V5.3 nC  powertrench
NCE2309


60V 1.6A 140mO@10V,1.5A 1.5W P Channel SOT-23 MOSFETs ROHS
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NCE Power 30587
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AUD 0.0577
Multiples of: 10

                   
IRF6648TRPBF


N-Channel 60 V 86A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
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Infineon 30322
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AUD 1.4316
Multiples of: 1

            Hexfet®      
AO3400A


30V 5.8A 1PCSNChannel SOT-23-3L MOSFETs ROHS
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GOODWORK 29662
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AUD 0.0258
Multiples of: 20

                   
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First...8687888990...

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