MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302DDS-T1-GE3


MOSFET 20V Vds 8V Vgs SOT-23
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 35623
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AUD 0.0691
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2.9 A20 V57 mOhmsN - Channel 400 mV- 55 C+ 150 C860 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V5.5 nCEnhancement Trenchfet
SIR186LDP-T1-RE3


MOSFET N-CHANNEL 60-V (D-S)
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Vishay 30321
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AUD 0.5943
Multiples of: 1

80.3 A60 V4.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C57 WSMD/SMTPOWERPAK SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V31.5 nCEnhancement TrenchFET
IRL40B209


MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl
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Infineon 30070
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AUD 2.7519
Multiples of: 1

414 A40 V1.6 mOhmsN - Channel 1 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V180 nCEnhancement Strongirfet
SI2319CDS-T1-BE3


MOSFET P-CHANNEL 40V D-S
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Vishay 29941
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AUD 0.2846
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           Cut Tape       
FDMS86201


MOSFET 120V N-Channel PowerTrench MOSFET
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ON Semiconductor 29881
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AUD 2.0254
Multiples of: 1

65 A120 V9.6 mOhmsN - Channel 4 V- 55 C+ 150 C104 WSmd/SmtPOWER - 56ReelSi1 Channel20 V32 nC  Powertrench
SI2300


MOSFET SOT23 RoHS
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TWGMC 29840
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AUD 0.0347
Multiples of: 20

                   
PMV50XPR


P-Channel 20 V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB
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Nexperia 29764
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AUD 0.1855
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- 4.4 A- 20 V48 mOhmsP - Channel12 V- 900 mV- 55 C+ 150 C1.096 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V7.7 nCEnhancement  
BSC072N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
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Infineon 29748
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AUD 1.1279
Multiples of: 1

            Optimos 5      
2N7002T


MOSFET N Trench 60V 115mA 2V @ 250uA 7.5 Ω @ 50mA,5V SC-75 (SOT-523) RoHS
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Changjing Electronics Technology 22795
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AUD 0.026
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IRLML6346TRPBF


MOSFET N Trench 30V 3.4A 1.1V @ 10uA 63 mΩ @ 3.4A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 11330
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between Thu. 19 Feb to Mon. 23 Feb Calender.png

AUD 0.11
Multiples of: 1

3.4 A30 V63 mOhmsN - Channel    1.3 WSmd/SmtSOT - 23ReelSi1 Channel12 V2.9 nC   
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