MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMC2990UDJQ-7B


MOSFET MOSFET BVDSS: 8V-24V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 29045
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AUD 0.1205
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450 mA , 310 mA20 V990 mOhms , 1.9 OhmsN - Channel, P - Channel 400 mV , 1 V- 55 C+ 150 C350 mWSMD/SMTSOT - 963 - 6Reel , Cut TapeSi2 Channel- 8 V , 8 V500 pC , 400 pCEnhancementAEC - Q101 
FDC604P


MOSFET SSOT-6 P-CH
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ON Semiconductor 29012
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AUD 0.2838
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5.5 A20 V33 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSSOT - 6Cut TapeSi1 Channel8 V Enhancement Powertrench
BSS138BK.215


Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23
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Nexperia 28985
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AUD 0.094
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SSM3K333R,LF(T


MOSFET N Trench 30V 6A 2.5V @ 100uA 28 mΩ @ 5A,10V SOT-23F RoHS
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Toshiba 28944
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AUD 0.0447
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BSN20BKR


Transistor: N-MOSFET; unipolar; 60V; 0.17A; 402mW; SOT23
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Nexperia 28915
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AUD 0.0401
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BSC014N06NS


Infineon Technologies MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
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Infineon 28886
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AUD 1.2543
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100 A60 V1.45 mOhmsN - Channel 2.1 V- 55 C+ 150 C156 WSmd/SmtTDSON - 8ReelSi1 Channel10 V89 nCEnhancement Optimos
TPH2R608NH,L1Q(M


SOP-8 MOSFETs ROHS
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Toshiba 28531
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AUD 1.1523
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BSC070N10NS3G


MOSFET N Channel 100V 90A(Tc) 3.5V @ 75uA 7mO @ 50A,10V PG-TDSON-8 RoHS
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Infineon 27322
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AUD 0.6509
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SQ2361ES-T1_BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 23083
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AUD 0.4353
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           Cut Tape       
SI2300DS-T1-GE3


MOSFET 30V 3.6A N-CH MOSFET
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Vishay 2910
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AUD 0.3461
Multiples of: 3000

3.6 A30 V68 mOhmsN - Channel 600 mV- 55 C+ 150 C1.7 WSmd/SmtTO - 236ReelSi1 Channel4.5 V6.5 nCEnhancement Trenchfet
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First...9192939495...

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