MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP40P05


40V 5A 65mΩ@10V,3A 2W P Channel SOT-23-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li 85185
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AUD 0.0687
Multiples of: 20

                   
DMN26D0UT-7


MOSFET N-Ch -20V VDSS 230mA 300mW
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Diodes Incorporated 46560
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AUD 0.0578
Multiples of: 3000

230 mA20 V3 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel4.5 V Enhancement  
SSM3K15AFU,LF(T


Transistor: N-MOSFET; unipolar; 30V; 100mA; 150mW; SC70
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Toshiba 29100
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AUD 0.0564
Multiples of: 30000

                   
2V7002WT1G


N-Channel 60 V 310mA (Ta) 280mW (Tj) Surface Mount SC-70-3 (SOT323)
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ON Semiconductor 29100
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AUD 0.1096
Multiples of: 3000

310 mA60 V1.33 OhmsN - Channel20 V2.5 V- 55 C+ 150 C280 mWSmd/SmtSC - 70 - 3ReelSi1 Channel20 V0.7 nCEnhancementAec - Q101 
SI8472DB-T2-E1


MOSFET 20V 4.5A 1.8W 44mOhms @ 4.5V
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Vishay 29100
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AUD 0.2971
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT - 4Reel       
BSP316PH6327XTSA1


Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
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Infineon 29100
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AUD 0.2757
Multiples of: 1000

            Sipmos      
SI7619DN-T1-GE3


Vishay Semiconductors MOSFET -30V -24A 27.8W
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Vishay 29100
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AUD 0.4278
Multiples of: 3000

24 A30 V21 mOhmsP - Channel 1 V- 55 C+ 150 C27.8 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel- 10 V32 nCEnhancement Trenchfet
MMBF170Q-7-F


MOSFET N-Ch Enh Mode FET 60Vdss 60Vdgr
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Diodes Incorporated 26190
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AUD 0.0873
Multiples of: 3000

500 mA70 V5.3 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V EnhancementAec - Q101 
FDC6420C


SOT-23-6 MOSFETs ROHS
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ON Semiconductor 26190
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AUD 0.3717
Multiples of: 3000

3 A , 2.2 A20 V70 mOhmsN - Channel, P - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6Cut TapeSi2 Channel12 V Enhancement Powertrench
2N7002DW


MOSFETS ELECTRONICS PART
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Diodes Incorporated 0
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AUD 0.0604
Multiples of: 3000

                   
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