MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1553CDL-T1-GE3


MOSFET -20V Vds 12V Vgs SC70-6 N&P PAIR
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Vishay 43650
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AUD 0.1996
Multiples of: 3000

70 mA , 50 mA20 V390 mOhms , 850 mOhmsN And P - Channel 600 mV , 1.5 V- 55 C+ 150 C0.34 WSmd/SmtSC - 70ReelSi2 Channel12 V1.8 nC , 3 nCEnhancement Trenchfet
NTR5105PT1G


ON Semiconductor MOSFET PFET SOT23 60V 211MA 5OHM
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ON Semiconductor 29100
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AUD 0.0437
Multiples of: 3000

196 mA60 V6 OhmsP - Channel 1 V- 55 C+ 150 C403 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V1 nCEnhancement  
NX7002BKR


NXP Semiconductors MOSFET 60V N-channel Trench MOSFET
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Nexperia 29100
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AUD 0.055
Multiples of: 3000

           Reel       
BSS138LT3G


MOSFET 50V 200mA N-Channel
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ON Semiconductor 29100
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AUD 0.0599
Multiples of: 10000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
LGE2300


Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
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Luguang 29100
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AUD 0.0644
Multiples of: 20

                   
DMN3190LDW-13


Diodes Incorporated MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss
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Diodes Incorporated 29100
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AUD 0.0756
Multiples of: 10000

1 A30 V190 mOhmsN - Channel 2.8 V- 55 C+ 150 C320 mWSmd/SmtSOT363Reel-2 Channel+/- 20 V2 nCEnhancement  
DMN1260UFA-7B


Diodes Incorporated MOSFET 12V N-Ch Enh FET 8 VGS 60pF 0.92nC
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Diodes Incorporated 29100
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AUD 0.0817
Multiples of: 10000

200 mA12 V366 mOhmsN - Channel 1 V- 55 C+ 150 C0.36 WSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.96 nCEnhancement  
TN2106K1-G


Transistor: N-MOSFET; unipolar; 60V; 0.6A; 360mW; SOT23-3
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Microchip 29100
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AUD 0.5224
Multiples of: 3000

280 mA60 V2.5 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel10 V Enhancement  
BSS131H6327XTSA1


Infineon Technologies MOSFET N-Ch 240V 100mA SOT-23-3
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Infineon 8730
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AUD 0.075
Multiples of: 3000

         Smd/SmtSOT - 23 - 3Reel       
DMT6016LSS-13


Diodes Incorporated MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
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Diodes Incorporated 2425
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AUD 0.3015
Multiples of: 2500

10.6 A60 V16 mOhmsN - Channel 2.5 V- 55 C+ 150 C2.7 WSmd/SmtSO - 8ReelSi1 Channel20 V17 nCEnhancement Dmt6016
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