MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP2310GN


SOT23 MOSFETs ROHS
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TECH PUBLIC 29714
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AUD 0.0505
Multiples of: 10

                   
BSS84PWH6327XT


Infineon Technologies MOSFET P-Ch -60V 150mA SOT-323-3
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Infineon 29649
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AUD 0.0607
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150 mA60 V4.6 OhmsN - Channel 2 V- 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel20 V1.5 nCEnhancementAec - Q101 
BSS215PH6327XT


MOSFET OptiMOS P2 Small Signal Transistor
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Infineon 29645
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AUD 0.1497
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1.5 A20 V105 mOhmsP - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel12 V- 3.6 nCEnhancementAec - Q101 
SQ4153EY-T1_GE3


MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
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Vishay 29641
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AUD 1.1144
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25 A12 V5.1 mOhmsP - Channel 900 mV- 55 C+ 175 C7.1 WSmd/SmtSO - 8Cut TapeSi1 Channel8 V151 nCEnhancementAec - Q101Trenchfet
PJC7400_R1_00001


MOSFET /C00/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-30TAMN/NF30TA-QI02/PJ///
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Panjit 29632
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AUD 0.1018
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           Cut Tape       
TPNTK3134NT1G


20V 950mA 200mO@4.5V,550mA 150mW N Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC 29587
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AUD 0.0307
Multiples of: 20

                   
IRFR540ZTRPBF


MOSFET MOSFT 100V 35A 28.5mOhm 39nC Qg
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Infineon 29543
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AUD 0.791
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35 A100 V28.5 mOhmsN - Channel 4 V + 175 C91 WSmd/SmtDPAKReelSi1 Channel 59 nC   
DMN2992UFB4-7B


MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K
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Diodes Incorporated 29514
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AUD 0.0471
Multiples of: 1

830 mA20 V990 mOhmsN - Channel 1 V- 55 C+ 150 C1.02 WSMD/SMTX2 - DFN1006 - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V410 pCEnhancement  
SI2319


SOT-23 MOSFETs ROHS
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HXY MOS 29458
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AUD 0.0492
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STL3N65M2


MOSFET N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package
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STMicroelectronics 29402
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AUD 0.6483
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2.3 A650 V1.6 OhmsN - Channel 2 V- 55 C+ 150 C22 WSmd/SmtPowerflat - 3.3X3.3 - HV - 8Cut TapeSi1 Channel25 V5 nCEnhancement Mdmesh
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