MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7341TRPBF


MOSFET 2 N Channel (Dual) 55V 4.7A 1V @ 250uA 50 mΩ @ 4.7A,10V SOIC-8_150mil RoHS
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Infineon 28915
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AUD 0.405
Multiples of: 1

4.7 A55 V56 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC   
AP3404S


30V 6.5A 20mΩ@10V,6.5A 1.4W 1.6V@250uA N Channel SOT-23-3 MOSFETs ROHS
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Quan Li 28828
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AUD 0.0608
Multiples of: 20

                   
IRLML2502TRPBF-ES


20V 3.5A 1W 36m 700mV 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 28828
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AUD 0.0239
Multiples of: 20

                   
IRFHM3911TRPBF


100V 115mO@6.3A,10V null PQFN-8L(3.3x3.3) MOSFETs ROHS
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Infineon 28823
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AUD 0.282
Multiples of: 1

3.2 A100 V92 mOhmsN - Channel 4 V- 55 C+ 150 C2.8 WSmd/SmtPQFN - 8ReelSi +/- 20 V17 nCEnhancement  
SQS460EN-T1_BE3


MOSFET N-CHANNEL 60V
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Vishay 28822
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AUD 0.7779
Multiples of: 1

8 A60 V36 mOhmsN - Channel 2.5 V- 55 C+ 175 C39 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V13 nCEnhancement TrenchFET
IPD80P03P4L07ATMA2


P-Channel 30V 80A (Tc) 88W (Tc) Surface Mount PG-TO252-3-11
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Infineon 28726
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AUD 1.0514
Multiples of: 1

          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®Mosfet (Metal Oxide)      
AO4262E


60V 16.5A 3.1W 6.5mO@10V,16.5A N Channel SOIC-8 MOSFETs ROHS
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Alpha & Omega 27201
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AUD 0.3365
Multiples of: 1

                   
8205A


20V 22mΩ@4.5V,4.5A 2W 1.5V@250uA 74.69pF@8V 2 N Channel(Double)Common Drain 522.3pF@8V 6.24nC@4.5V -55℃~+150℃@(Tj) SOT-23-6 MOSFETs ROHS
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JSMSEMI 26820
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AUD 0.0436
Multiples of: 10

                   
MS50N06


60V 50A 11.5mΩ@10V,20A 1.25W 2.5V@250uA 33pF@25V N Channel 900pF@25V 30nC@10V +150℃@(Tj) TO-252 MOSFETs ROHS
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MSKSEMI 25952
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AUD 0.1126
Multiples of: 5

                   
PJA3415A-AU_R1_000A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 23084
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AUD 0.1722
Multiples of: 1

                   
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