MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDN360P


Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
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ON Semiconductor 27574
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AUD 0.1746
Multiples of: 1

   P Channel               
IRFZ44NSTRLPBF


MOSFET N Trench 55V 49A 4V @ 250uA 17.5 mΩ @ 25A,10V D2-PAK RoHS
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Infineon 27535
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AUD 0.6851
Multiples of: 1

49 A55 V175 mOhmsN - Channel    110 WSmd/SmtD2PAKReelSi1 Channel20 V42 nC   
NTMFS4C022NT1G


MOSFET TRENCH 6 30V NCH
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ON Semiconductor 27435
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AUD 0.3614
Multiples of: 1

         Smd/SmtSO - FL - 8Cut TapeSi      
AO3400-SOT23


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 28 mΩ @ 5.8A,10V SOT23 RoHS
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PUOLOP 27412
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AUD 0.0264
Multiples of: 20

                   
AO3403


MOSFET P Trench 30V 2.6A 1.4V @ 250uA 115 mΩ @ 2.6A,10V SOT-23-3L RoHS
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Alpha & Omega 27407
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AUD 0.0991
Multiples of: 5

                   
AO3404A


MOSFET N Trench 30V 5.8A 3V @ 250uA 28 mΩ @ 5.8A,10V SOT-23-3L RoHS
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Alpha & Omega 27329
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AUD 0.093
Multiples of: 5

5.8 A  N    1.4 WSurface Mount Tape And Reel    Enhancement  
BSS806NEH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
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Infineon 27283
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AUD 0.0974
Multiples of: 1

            Optimos 2      
CJ3402


MOSFET N Trench 30V 4A 1.4V @ 250uA 55 mΩ @ 4A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 26655
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AUD 0.0343
Multiples of: 20

                   
BSS123IXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 24638
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AUD 0.0566
Multiples of: 1

190 mA100 V6 OhmsN - Channel 1.8 V- 55 C+ 150 C500 mWSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V630 pCEnhancement  
IAUCN04S7L028ATMA1


MOSFETs N
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Infineon 22404
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AUD 0.517
Multiples of: 1

100 A40 V2.82 mOhmsN - Channel 1.5 V- 55 C+ 175 C58 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V18 nCEnhancement  
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