MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3J332R,LF


MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 45153
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AUD 0.0454
Multiples of: 10

6 A30 V144 mOhmsP - Channel 500 mV + 150 C1 WSmd/SmtSOT - 23FReelSi1 Channel- 1.8 V8.2 nCEnhancement  
DN3145N8-G


Transistor: N-MOSFET; unipolar; 450V; 0.12A; 1.3W; SOT89-3
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Microchip 29100
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AUD 1.1839
Multiples of: 1

100 mA450 V60 OhmsN - Channel  - 55 C+ 150 C1.3 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Depletion  
STL120N8F7


MOSFET N-channel 80 V, 3.7 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 29100
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AUD 1.204
Multiples of: 3000

120 A80 V4.4 mOhmsN - Channel 4 V- 55 C+ 175 C140 WSmd/SmtPowerflat - 8 Si1 Channel+/- 20 V60 nCEnhancement Stripfet
BSC035N10NS5ATMA1


Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
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Infineon 29100
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AUD 1.8667
Multiples of: 5000

            Optimos 5      
STL18N65M5


MOSFET N-CH 650V 0.215Ohm 15A MDmesh V
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STMicroelectronics 29100
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AUD 2.2546
Multiples of: 3000

15 A650 V240 mOhmsN - Channel25 V4 V- 55 C+ 150 C57 WSmd/SmtPowerflat - 8 5X6ReelSi2 Channel25 V31 nC  Mdmesh
DMC2990UDJQ-7B


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 29045
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AUD 0.1205
Multiples of: 1

450 mA , 310 mA20 V990 mOhms , 1.9 OhmsN - Channel, P - Channel 400 mV , 1 V- 55 C+ 150 C350 mWSMD/SMTSOT - 963 - 6Reel , Cut TapeSi2 Channel- 8 V , 8 V500 pC , 400 pCEnhancementAEC - Q101 
CMLDM7002AJ TR


MOSFET DUAL N-CHANNEL
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Central Semiconductor 28970
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AUD 0.7212
Multiples of: 1

   N - Channel     Smd/SmtSOT - 563Cut TapeSi2 Channel     
BSS84PWH6327XT


Infineon Technologies MOSFET P-Ch -60V 150mA SOT-323-3
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Infineon 28883
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AUD 0.0647
Multiples of: 1

150 mA60 V4.6 OhmsN - Channel 2 V- 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel20 V1.5 nCEnhancementAec - Q101 
Hot IRFP150NPBF


Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
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Infineon 22649
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AUD 0.7273
Multiples of: 1

39 A100 V36 mOhmsN - Channel    140 WThrough HoleTO - 247ACTubeSi1 Channel20 V73.3 nC   
BSH108


SOT-23 MOSFETs ROHS
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TECH PUBLIC 22368
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AUD 0.0455
Multiples of: 10

                   
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