MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7619DN-T1-GE3


Vishay Semiconductors MOSFET -30V -24A 27.8W
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Vishay 29100
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AUD 0.3287
Multiples of: 3000

24 A30 V21 mOhmsP - Channel 1 V- 55 C+ 150 C27.8 WSmd/SmtPOWERPAK - 1212 - 8ReelSi1 Channel- 10 V32 nCEnhancement Trenchfet
FDS9431A


Transistor: P-MOSFET; unipolar; -20V; -3.5A; 2.5W; SO8
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ON Semiconductor 29100
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AUD 0.4519
Multiples of: 2500

            Powertrench®      
IPD50N04S410ATMA1


Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R
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Infineon 29100
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AUD 0.4556
Multiples of: 2500

                   
STL9P3LLH6


MOSFET LGS LV MOSFET
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STMicroelectronics 29100
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AUD 0.6817
Multiples of: 3000

- 9 A- 30 V12 mOhmsP - Channel - 1 V- 55 C+ 150 C3 WSmd/SmtPowerflat - 8Cut TapeSi1 Channel+/- 20 V24 nCEnhancement Stripfet
STD86N3LH5


STMicroelectronics MOSFET N-channel 30 V
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STMicroelectronics 29100
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AUD 0.791
Multiples of: 2500

80 A30 V5 mOhmsN - Channel22 V - 55 C+ 175 C70 WSmd/SmtDPAK - 3ReelSi1 Channel22 V EnhancementAec - Q101 
TPN2R703NL,L1Q


N-Channel 30 V 45A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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Toshiba 29100
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AUD 1.2119
Multiples of: 5000

45 A30 V3.3 mOhmsn - channel 1.3 v to 2.3 V- 55 C+ 150 C42 Wsmd/smtTSON - 8Reelsi1 channel20 V21 nCenhancement  
IPD200N15N3GATMA1


Infineon Technologies MOSFET
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Infineon 29100
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AUD 1.2808
Multiples of: 2500

50 A150 V20 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V23 nCEnhancement Optimos
STL120N8F7


MOSFET N-channel 80 V, 3.7 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 29100
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AUD 1.43
Multiples of: 3000

120 A80 V4.4 mOhmsN - Channel 4 V- 55 C+ 175 C140 WSmd/SmtPowerflat - 8 Si1 Channel+/- 20 V60 nCEnhancement Stripfet
STL18N65M5


MOSFET N-CH 650V 0.215Ohm 15A MDmesh V
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STMicroelectronics 29100
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AUD 2.0474
Multiples of: 3000

15 A650 V240 mOhmsN - Channel25 V4 V- 55 C+ 150 C57 WSmd/SmtPowerflat - 8 5X6ReelSi2 Channel25 V31 nC  Mdmesh
BRCS2310MA


SOT-23 MOSFETs ROHS
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Blue Rocket 29090
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AUD 0.044
Multiples of: 10

                   
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