MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDV304P


Trans MOSFET P-CH 25V 0.46A 3-Pin SOT-23 T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 7536900
Ships to you
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AUD 0.0381
Multiples of: 3000

460 mA25 V1.1 OhmsP - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V Enhancement  
FDV301N


Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
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ON Semiconductor 3230100
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AUD 0.0317
Multiples of: 3000

                   
FDV303N


25V 680mA 450mO@4.5V,500mA 350mW N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 3008940
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AUD 0.0435
Multiples of: 3000

680 mA25 V450 mOhmsN - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V Enhancement  
BSS123L


Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
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ON Semiconductor 2910000
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AUD 0.0424
Multiples of: 3000

                   
2N7002K


New Quadratic Unclassified Data SOT-23 RoHS
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Microdiode Electronics 2864798
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AUD 0.0159
Multiples of: 50

                   
IRLML6344TRPBF


MOSFET N Trench 30V 5A 1.1V @ 10uA 29 mΩ @ 5A,4.5V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 2293080
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AUD 0.1399
Multiples of: 3000

5 A30 V29 mOhmsN - Channel 800 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V6.8 nC   
CPH3423-TL-E


Trans MOSFET N-CH Si 60V 1.5A T/R
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ON Semiconductor 2150490
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AUD 0.191
Multiples of: 1

           Tape And Reel    enhancement  
SI2302-2.3A


20V 2.3A SOT-23 MOSFETs ROHS
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JSMSEMI 2129392
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AUD 0.0145
Multiples of: 50

                   
DMP3099L-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
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Diodes Incorporated 2095200
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AUD 0.083
Multiples of: 10000

- 3.8 A- 30 V65 mOhmsP - Channel20 V- 1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V11 nCEnhancement  
NVR4501NT1G


ON Semiconductor MOSFET
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ON Semiconductor 1772709
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AUD 0.2479
Multiples of: 1

3.1 A20 V80 mOhmsN - Channel 650 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V2.4 nCEnhancementAec - Q101 
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