MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVTA7002NT1G


MOSFET NFET SC75 30V 154MA 7OHM
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ON Semiconductor 727930
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AUD 0.0854
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154 mA30 V1.4 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSC - 75ReelSi1 Channel10 V  Aec - Q101 
SI2308A


MOSFET N Trench 60V 2A 3V @ 250uA 160 mΩ @ 2A,10V SOT-23 RoHS
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Youtai 634709
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AUD 0.0341
Multiples of: 20

                   
CPH3455-TL-W


N-Channel 35 V 3A (Ta) 1W (Ta) Surface Mount 3-CPH
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ON Semiconductor 616012
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AUD 0.2101
Multiples of: 1

3 A35 V208 mOhmsN - channel 1.2 V- 55 C+ 150 C1 WSmd/smtSOT - 23 - 3ReelSi1_Channel+/- 20 V4 nCEnhancement  
SCH2825-TL-E


Trans MOSFET N-CH 30V 1.6A 6-Pin Case SCH T/R
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ON Semiconductor 597155
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AUD 0.2293
Multiples of: 1

                   
IRLML6244TRPBF


MOSFET N Trench 20V 6.3A 1.1V @ 10uA 21 mΩ @ 6.3A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 573270
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AUD 0.0951
Multiples of: 3000

            Hexfet®      
2N7002K-T1-GE3


N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 464562
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AUD 0.0492
Multiples of: 10

300 mA60 V2 OhmsN - Channel 1 V- 55 C+ 125 C0.35 WSmd/SmtSOT - 23ReelSi1 Channel10 V0.4 nCEnhancement  
2N7002


60V 115mA 1.2Ω@10V,500mA 200mW 2.1V@250uA 4pF@25V N Channel 20pF@25V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI 409049
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AUD 0.0077
Multiples of: 50

                   
SI2302-2.3A


20V 2.3A SOT-23 MOSFETs ROHS
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JSMSEMI 374129
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AUD 0.0077
Multiples of: 100

                   
2N7002K-7


N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 371374
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AUD 0.0274
Multiples of: 20

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
BSS126H6327XTSA2


Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
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Infineon 2910
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AUD 0.1547
Multiples of: 3000

            Sipmos      
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