MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ2308CES-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay 481331
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AUD 0.33
Multiples of: 1

           Cut Tape       
SI2302


20V 3A 1W 45mΩ@4.5V,3A N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 463997
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AUD 0.0162
Multiples of: 50

                   
NTTFS4928NTWG


ON Semiconductor MOSFET NFET U8FL 30V 41A 8MOHM
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ON Semiconductor 439992
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AUD 0.5246
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37 A30 V8.9 mOhmsn - channel 1.6 V- 55 C+ 150 C20.8 Wsmd/smtWDFN - 8Reelsi1 channel20 V16 nC   
CJ2301 S1


MOSFET P Trench 20V 2.3A 1V @ 250uA 112 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 435049
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AUD 0.0341
Multiples of: 20

                   
MMBF170LT1G


N-Channel 60 V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 433590
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AUD 0.05
Multiples of: 3000

500 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
2N7002ET7G


MOSFET NFET SOT23 60V 115MA 7MO
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ON Semiconductor 430520
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AUD 0.0332
Multiples of: 1

310 mA60 V2.5 OhmsN - Channel 1 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.81 nCEnhancement  
SI2307CDS-T1-E3


P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 422709
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AUD 0.2933
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3.5 A30 V88 mOhmsP - Channel 1 V- 55 C+ 150 C1.8 WSmd/SmtTO - 236 - 3ReelSi1 Channel- 10 V4.1 nCEnhancement Trenchfet
BSS169H6327XTSA1


Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
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Infineon 299730
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AUD 0.1335
Multiples of: 3000

            Sipmos      
SCH1330-TL-H


Trans MOSFET P-CH 20V 1.5A 6-Pin Case SCH T/R
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ON Semiconductor 67900
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AUD 0.2032
Multiples of: 1

1.5 A- 20 V241 mOhmsp - channel  - 55 C+ 150 C1 Wsmd/smtSCH - 6Reel 1 channel10 V    
BSS84,215


P-Channel 50 V 130mA (Ta) 250mW (Tc) Surface Mount TO-236AB
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Nexperia 2658
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AUD 1.2066
Multiples of: 1

   P - Channel  - 65 C+ 150 C Smd/SmtSOT - 23Reel       
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