MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002K


New Quadratic Unclassified Data SOT-23 RoHS
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Microdiode Electronics 575501
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between Wed. 26 Nov to Mon. 01 Dec
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AUD 0.0122

Multiples of: 50

                   
NTMFS4926NT1G


MOSFET TRENCH 3.1 30V 7 Ohm NCH
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ON Semiconductor 570360
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between Wed. 12 Nov to Tue. 18 Nov
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AUD 0.4375

Multiples of: 1

44 A30 V7 mOhmsn - channel 1.6 V- 55 C+ 150 C2.7 Wsmd/smtSO - 8 FLReelsi1 channel20 V8.7 nC   
AO3400


30V 5.8A 1.5W 35mΩ@10V,5.8A 1.2V@250uA 77pF@15V N Channel 1050pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 546090
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between Wed. 26 Nov to Mon. 01 Dec
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AUD 0.0236

Multiples of: 20

                   
HX2301A


MOSFET P Trench 20V 2.5A 1V @ 250uA 130 mΩ @ 2.5A,4.5V SOT-23 RoHS
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hengjiaxing 526970
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between Wed. 26 Nov to Mon. 01 Dec
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AUD 0.0125

Multiples of: 50

                   
NVTFS4C05NTAG


ON Semiconductor MOSFET NFET U8FL 30V 75A 3.6MOHM
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ON Semiconductor 521860
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between Wed. 12 Nov to Tue. 18 Nov
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AUD 1.0115

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102 A30 V3.6 mOhmsN - Channel     Smd/SmtWDFN - 8ReelSi    Aec - Q101 
NTNS3A92PZT5G


MOSFET PFET XLLGA3 20V
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ON Semiconductor 519920
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between Wed. 12 Nov to Tue. 18 Nov
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AUD 0.625

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           Reel       
DMG7401SFGQ-7


MOSFET P-Ch Enh Mode FET 30Vdss 25Vgss
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Diodes Incorporated 493046
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between Wed. 12 Nov to Tue. 18 Nov
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AUD 0.3908

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- 9.8 A- 30 V9 mOhmsP - Channel - 3 V- 55 C+ 150 C940 mWSmd/SmtPowerdi3333 - 8ReelSi1 Channel+/- 25 V41 nCEnhancementAec - Q101 
DMN6140L-13


Diodes Incorporated MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
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Diodes Incorporated 485950
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between Wed. 12 Nov to Tue. 18 Nov
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AUD 0.0849

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2.3 A60 V140 mOhmsN - Channel 3 V- 55 C+ 150 C1.3 WSmd/SmtSOT23Reel-1 Channel+/- 20 V8.6 nCEnhancement  
BSS806NH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
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Infineon 16976
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between Tue. 18 Nov to Thu. 20 Nov
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AUD 0.0873

Multiples of: 1

            Optimos 2      
SPD15P10PLGBTMA1


Infineon Technologies MOSFET P-Ch -100V 15A DPAK-2
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Infineon 1874
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between Wed. 12 Nov to Tue. 18 Nov
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AUD 1.1363

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15 A100 V200 mOhmsP - Channel 2 V- 55 C+ 175 C128 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V47 nCEnhancement  
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