MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3099L-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
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Diodes Incorporated 1416200
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AUD 0.0791
Multiples of: 10000

- 3.8 A- 30 V65 mOhmsP - Channel20 V- 1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V11 nCEnhancement  
2N7002


60V 115mA 1.2Ω@10V,500mA 200mW 2.1V@250uA 4pF@25V N Channel 20pF@25V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI 1383899
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AUD 0.0075
Multiples of: 50

                   
FDMB3900AN


Fairchild Semiconductor MOSFET 25V Dual N-Chanenl
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ON Semiconductor 1311206
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AUD 0.5627
Multiples of: 1

7 A25 V23 mOhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtMICRO - FET - 8 3X1.9ReelSi2 Channel  Enhancement Powertrench
AO3400


30V 5.8A 1.5W 35mΩ@10V,5.8A 1.2V@250uA 77pF@15V N Channel 1050pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 1034990
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AUD 0.0224
Multiples of: 20

                   
AO3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Hottech 857072
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AUD 0.0282
Multiples of: 20

                   
BSS138P,215


N-Channel 60 V 360mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB
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Nexperia 846810
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AUD 0.035
Multiples of: 3000

360 mA60 V1.6 OhmsN - Channel 900 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 23ReelSi1 Channel10 V0.72 nCEnhancement  
FDN327N


Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
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ON Semiconductor 820620
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AUD 0.1371
Multiples of: 3000

            Powertrench®      
IRLML2803TRPBF


Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
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Infineon 789987
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AUD 0.1069
Multiples of: 1

            Hexfet®      
BSS126H6327XTSA2


Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
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Infineon 2910
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AUD 0.1416
Multiples of: 3000

            Sipmos      
2N7002


MOSFET N Trench 60V 115mA 2.5V @ 250uA 7.5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Changjing Electronics Technology 0
6 to 16 Weeks Calender.png

AUD 0.0135
Multiples of: 50

                   
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