MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS314PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
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Infineon 1239660
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AUD 0.0847
Multiples of: 3000

            Optimos P3      
SI2301-ZE


20V 2.3A 0.7W 126mΩ@4.5V P Channel SOT-23 MOSFETs ROHS
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HXY MOS 1120013
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AUD 0.011
Multiples of: 50

                   
AO3401A


MOSFET P Trench 30V 4A 1.3V @ 250uA 44 mΩ @ 4.3A,10V SOT-23-3L RoHS
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Alpha & Omega 1068619
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AUD 0.0598
Multiples of: 10

4 A  P    1.4 WSurface Mount      Enhancement  
2N7002K-7


N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 1066650
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AUD 0.0231
Multiples of: 20

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
BSS138BK,215


MOSFET N-CH 60 V 360 mA
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Nexperia 916650
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AUD 0.0488
Multiples of: 3000

360 mA60 V1.6 OhmsN - Channel 480 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 23ReelSi1 Channel10 V0.6 nCEnhancement  
AO3400A


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 RoHS
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Youtai 909219
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AUD 0.0279
Multiples of: 20

                   
2N7002W-7-F


N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount SOT-323
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Diodes Incorporated 846810
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AUD 0.0391
Multiples of: 3000

115 mA60 V13.5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V Enhancement  
PMV30UN2R


N-Channel 20 V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
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Nexperia 208065
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AUD 0.23
Multiples of: 1

5.4 A20 V24 mOhmsN - Channel 400 mV- 55 C+ 150 C1 WSmd/SmtTO - 236AB - 3ReelSi1 Channel12 V6.2 nCEnhancement  
IRLML2402TRPBF


MOSFET N Trench 20V 1.2A 700mV @ 250uA 250 mΩ @ 930mA,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 28130
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AUD 0.0771
Multiples of: 5

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
NX2301P,215


MOSFET P-CH -20 V -2 A
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Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.0806
Multiples of: 1

2 A20 V120 mOhmsP - Channel 500 mV- 55 C+ 150 C710 mWSmd/SmtSOT - 23ReelSi1 Channel- 4.5 V4.5 nCEnhancement  
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