MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MMBF170LT1G


N-Channel 60 V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 404490
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AUD 0.0459
Multiples of: 3000

500 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
BSS123NH6433XTMA1


N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23
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Infineon 397700
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AUD 0.0617
Multiples of: 10000

190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23ReelSi1 Channel20 V900 pCEnhancement  
2N7002 TR


MOSFET N-Ch 60V .2A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Central Semiconductor 386609
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AUD 0.1654
Multiples of: 1

115 mA60 V3.7 OhmsN - Channel 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel40 V592 pCEnhancement  
AO3400


30V 5.8A 1.5W 35mΩ@10V,5.8A 1.2V@250uA 77pF@15V N Channel 1050pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 379813
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AUD 0.0228
Multiples of: 20

                   
SQ2315ES-T1_BE3


MOSFET P-CHANNEL 12V D-S
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Vishay 376974
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AUD 0.3012
Multiples of: 1

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FDC5614P


Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
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ON Semiconductor 370860
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AUD 0.2864
Multiples of: 1

            Powertrench®      
2N7002K


60V 300mA 350mW 2.2Ω@10V,300mA 1.6V@250uA 7.8pF@30V N Channel 25.5pF@30V 3.7nC@10V -50℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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MSKSEMI 369812
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AUD 0.0095
Multiples of: 50

                   
IPB65R150CFDATMA1


Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3
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Infineon 369570
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AUD 4.1278
Multiples of: 1

            Coolmos      
BSS138LT1G


MOSFET 50V 200mA N-Channel
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ON Semiconductor 356378
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AUD 0.0433
Multiples of: 10

200 mA50 V3.5 OhmsN - Channel 850 mV- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V Enhancement  
PJA3406_R1_00001


MOSFET /A06/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-30TMN/NF30T-QI11/PJ///
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Panjit 3627
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AUD 0.0834
Multiples of: 10

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