MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJ3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 65 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 347788
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AUD 0.0349
Multiples of: 10

                   
NDS351AN


Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
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ON Semiconductor 345320
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AUD 0.2002
Multiples of: 1

   N Channel               
SI2302-HXY


20V 2.8A 55mΩ@4.5V,2.8A 0.9W N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 339357
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AUD 0.0112
Multiples of: 50

                   
CJ3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 336602
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AUD 0.0463
Multiples of: 10

                   
SI2312BDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 335562
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AUD 0.3194
Multiples of: 1

3.9 A20 V31 mOhmsN - Channel 850 mV- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V7.5 nCEnhancement  
BSS84PW H6327


Infineon Technologies MOSFET P-Ch -60V 150mA SOT-323-3
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Infineon 332812
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AUD 0.0646
Multiples of: 1

- 150 mA- 60 V8 OhmsP - Channel+/- 20 V- 1.5 V- 55 C+ 150 C300 mWSmd/SmtPG - SOT - 323Reel-1 Channel20 V1 nCEnhancementAec - Q101 
2N7002E-T1-E3


60V 240mA 3O@10V,250mA 350mW N Channel SOT-23 MOSFETs ROHS
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Vishay 332759
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AUD 0.1252
Multiples of: 1

240 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel4.5 V0.6 nCEnhancement  
CMLDM3737 TR


MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
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Central Semiconductor 332400
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AUD 0.2558
Multiples of: 1

   N - Channel     Smd/SmtSOT - 563Cut TapeSi2 Channel     
CPH6355-TL-W


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 328830
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AUD 0.2188
Multiples of: 1

         smd/smtSOT - 26 - 6Cut Tapesi      
BSR316PH6327XTSA1


Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
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Infineon 267720
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AUD 0.1956
Multiples of: 3000

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