MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG7401SFGQ-7


MOSFET P-Ch Enh Mode FET 30Vdss 25Vgss
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Diodes Incorporated 492076
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AUD 0.4257
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- 9.8 A- 30 V9 mOhmsP - Channel - 3 V- 55 C+ 150 C940 mWSmd/SmtPowerdi3333 - 8ReelSi1 Channel+/- 25 V41 nCEnhancementAec - Q101 
FDV305N


Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
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ON Semiconductor 465600
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AUD 0.0411
Multiples of: 3000

   N Channel               
NTTFS4928NTWG


ON Semiconductor MOSFET NFET U8FL 30V 41A 8MOHM
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ON Semiconductor 439992
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AUD 0.4507
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37 A30 V8.9 mOhmsn - channel 1.6 V- 55 C+ 150 C20.8 Wsmd/smtWDFN - 8Reelsi1 channel20 V16 nC   
AUIRFR5305TRL


International Rectifier MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms
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Infineon 414090
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AUD 1.9329
Multiples of: 1

- 31 A- 55 V65 mOhmsP - Channel - 4 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V63 nC Aec - Q101 
FDFS2P753Z


MOSFET -30V -3A 115 OHM PowerTrenchAr MOSFET
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ON Semiconductor 403183
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AUD 0.4759
Multiples of: 1

3 A30 V115 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSO - 8ReelSi1 Channel25 V Enhancement Powertrench
DMN66D0LT-7


60V 115mA 200mW 5O@10V,115mA N Channel SOT-523 MOSFETs ROHS
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Diodes Incorporated 398670
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AUD 0.0574
Multiples of: 3000

115 mA60 V6 OhmsN - Channel 2 V- 55 C+ 150 C200 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel20 V Enhancement  
SI2307CDS-T1-E3


P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 395544
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AUD 0.275
Multiples of: 1

3.5 A30 V88 mOhmsP - Channel 1 V- 55 C+ 150 C1.8 WSmd/SmtTO - 236 - 3ReelSi1 Channel- 10 V4.1 nCEnhancement Trenchfet
SI2301-ZE


20V 2.3A 0.7W 126mΩ@4.5V P Channel SOT-23 MOSFETs ROHS
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HXY MOS 375875
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AUD 0.011
Multiples of: 100

                   
BSS123N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 344877
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AUD 0.066
Multiples of: 1

190 mA100 V2.4 OhmsN - Channel 1.9 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
AP2300


MOSFET N Trench 20V 5.2A (Tc) 1.5V @ 250uA 35 mΩ @ 5.2A,2.5V SOT23 RoHS
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Quan Li 243664
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AUD 0.0305
Multiples of: 50

                   
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