MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRFR5305TRL


International Rectifier MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms
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Infineon 422149
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AUD 2.1476
Multiples of: 1

- 31 A- 55 V65 mOhmsP - Channel - 4 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V63 nC Aec - Q101 
FDFS2P753Z


MOSFET -30V -3A 115 OHM PowerTrenchAr MOSFET
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ON Semiconductor 405217
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AUD 0.528
Multiples of: 1

3 A30 V115 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSO - 8ReelSi1 Channel25 V Enhancement Powertrench
SI2302-TP


N-Channel 20 V 3A (Ta) 1.25W (Ta) Surface Mount SOT-23
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Micro Commercial Components (MCC) 387030
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AUD 0.0893
Multiples of: 3000

3 A20 V110 mOhmsN - Channel   + 150 C1.25 WSmd/SmtSOT - 23ReelSi1 Channel     
2N7002 TR


MOSFET N-Ch 60V .2A
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Central Semiconductor 386609
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AUD 0.1654
Multiples of: 1

115 mA60 V3.7 OhmsN - Channel 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel40 V592 pCEnhancement  
BSS84LT1G


MOSFET 50V 130mA P-Channel
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ON Semiconductor 378222
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AUD 0.0343
Multiples of: 10

130 mA50 V10 OhmsP - Channel  - 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V2.2 nCEnhancement  
FCH041N65F_F085


Fairchild Semiconductor MOSFET 650V N-Channel SuperFET II MOSFET
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ON Semiconductor 377136
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AUD 16.4692
Multiples of: 450

76 A650 V96 mOhmsn - channel 3 V- 55 C+ 150 C595 Wthrough holeTO - 247 - 3Tubesi1 channel+/- 20 V234 nCenhancement superfet ii
SQ2315ES-T1_BE3


MOSFET P-CHANNEL 12V D-S
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Vishay 376974
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AUD 0.3012
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           Cut Tape       
IPB65R150CFDATMA1


Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3
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Infineon 370540
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AUD 4.3899
Multiples of: 1

            Coolmos      
LBSS138LT1G


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V SOT-23 (SOT-23-3) RoHS
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Leshan 363459
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AUD 0.0176
Multiples of: 50

                   
NVTR01P02LT1G


ON Semiconductor MOSFET PFET 20V 0.160R TR
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ON Semiconductor 2910
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AUD 0.1385
Multiples of: 3000

- 1.3 A- 20 V220 mOhmsP - Channel     Smd/SmtSOT - 23 - 3ReelSi    Aec - Q101 
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