MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002K


New Quadratic Unclassified Data SOT-23 RoHS
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Microdiode Electronics 1422699
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AUD 0.0123
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SSM6N55NU,LF


Toshiba MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
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Toshiba 451050
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AUD 0.0431
Multiples of: 3000

4 A30 V64 mOhmsN - Channel 1.3 v to 2.5 V- 55 C+ 150 C1 WSmd/SmtUDFN - 6ReelSi2 Channel20 V2.5 nC   
NTTFS4928NTWG


ON Semiconductor MOSFET NFET U8FL 30V 41A 8MOHM
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ON Semiconductor 439992
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AUD 0.4933
Multiples of: 1

37 A30 V8.9 mOhmsn - channel 1.6 V- 55 C+ 150 C20.8 Wsmd/smtWDFN - 8Reelsi1 channel20 V16 nC   
IRLML5103TRPBF


MOSFET P Trench 30V 760mA 1V @ 250uA 600 mΩ @ 600mA,10V SOT-23 (SOT-23-3) RoHS
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Infineon 439410
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AUD 0.0929
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
AO3400


SOT-23 MOSFETs ROHS
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JSMSEMI 432367
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AUD 0.0286
Multiples of: 20

                   
AUIRFR5305TRL


International Rectifier MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms
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Infineon 417985
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AUD 2.0194
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- 31 A- 55 V65 mOhmsP - Channel - 4 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V63 nC Aec - Q101 
DMN6140L-13


Diodes Incorporated MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
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Diodes Incorporated 415480
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AUD 0.0811
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2.3 A60 V140 mOhmsN - Channel 3 V- 55 C+ 150 C1.3 WSmd/SmtSOT23Reel-1 Channel+/- 20 V8.6 nCEnhancement  
SI2307CDS-T1-E3


P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 405765
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AUD 0.2873
Multiples of: 1

3.5 A30 V88 mOhmsP - Channel 1 V- 55 C+ 150 C1.8 WSmd/SmtTO - 236 - 3ReelSi1 Channel- 10 V4.1 nCEnhancement Trenchfet
SI2302


20V 3A 1W 45mΩ@4.5V,3A N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 25996
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AUD 0.0107
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STP60NF06


Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; TO220-3
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STMicroelectronics 18929
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AUD 0.9019
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