MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2312BDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 335562
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AUD 0.3194
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3.9 A20 V31 mOhmsN - Channel 850 mV- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V7.5 nCEnhancement  
BSS84PW H6327


Infineon Technologies MOSFET P-Ch -60V 150mA SOT-323-3
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Infineon 332812
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AUD 0.0646
Multiples of: 1

- 150 mA- 60 V8 OhmsP - Channel+/- 20 V- 1.5 V- 55 C+ 150 C300 mWSmd/SmtPG - SOT - 323Reel-1 Channel20 V1 nCEnhancementAec - Q101 
CMLDM3737 TR


MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
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Central Semiconductor 332400
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AUD 0.2558
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   N - Channel     Smd/SmtSOT - 563Cut TapeSi2 Channel     
CPH6355-TL-W


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 328830
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AUD 0.2188
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         smd/smtSOT - 26 - 6Cut Tapesi      
2N7002E-T1-E3


60V 240mA 3O@10V,250mA 350mW N Channel SOT-23 MOSFETs ROHS
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Vishay 327423
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AUD 0.1215
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240 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel4.5 V0.6 nCEnhancement  
NTR4170NT1G


MOSFET NFET SOT23 30V 4A TR
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ON Semiconductor 299730
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AUD 0.0827
Multiples of: 3000

3.9 A30 V55 mOhmsN - Channel 600 mV- 55 C+ 150 C1.25 WSmd/SmtTO - 236ReelSi1 Channel10 V4.76 nCEnhancement  
CJ3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 296703
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AUD 0.0291
Multiples of: 20

                   
2N7002K


60V 340mA 350mW 900m@10V,500mA 2.5V@1mA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 289011
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AUD 0.0125
Multiples of: 50

                   
BSD235NH6327XTSA1


Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
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Infineon 287442
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AUD 0.1001
Multiples of: 1

            Optimos 2      
FDMA1028NZ


Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
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ON Semiconductor 285180
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AUD 0.3603
Multiples of: 1

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