MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRFR5305TRL


International Rectifier MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms
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Infineon 410551
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AUD 2.0194
Multiples of: 1

- 31 A- 55 V65 mOhmsP - Channel - 4 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V63 nC Aec - Q101 
FDFS2P753Z


MOSFET -30V -3A 115 OHM PowerTrenchAr MOSFET
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ON Semiconductor 403183
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AUD 0.4972
Multiples of: 1

3 A30 V115 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSO - 8ReelSi1 Channel25 V Enhancement Powertrench
BSS138PW.115


Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SOT323
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Nexperia 400412
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AUD 0.094
Multiples of: 1

                   
BSS84PH6327XTSA2


Transistor: P-MOSFET; unipolar; -60V; -0.17A; 0.36W; SOT23
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Infineon 398670
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AUD 0.0448
Multiples of: 3000

   P Channel               
2N7002W-7-F


N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount SOT-323
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Diodes Incorporated 395760
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AUD 0.0384
Multiples of: 3000

115 mA60 V13.5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V Enhancement  
NVR4003NT3G


MOSFET NFET 30V .56A 1500M
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ON Semiconductor 388000
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AUD 0.1131
Multiples of: 10000

0.5 A30 V1.5 OhmsN - Channel20 V1.4 V- 55 C+ 150 C0.83 WSmd/SmtSOT - 23 - 3Reel   1.15 nC   
2N7002 TR


MOSFET N-Ch 60V .2A
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Central Semiconductor 386609
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AUD 0.1654
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115 mA60 V3.7 OhmsN - Channel 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel40 V592 pCEnhancement  
HL2300


20V 4.5A 25m@4.5V,4.5A 1W 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 379139
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AUD 0.0326
Multiples of: 5

                   
SQ2315ES-T1_BE3


MOSFET P-CHANNEL 12V D-S
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Vishay 376974
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AUD 0.3012
Multiples of: 1

           Cut Tape       
AO3400


SOT-23 MOSFETs ROHS
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JSMSEMI 371490
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AUD 0.0349
Multiples of: 20

                   
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