MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSM002N06T2L


ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 0.25A
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ROHM 287082
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between Thu. 01 Jan to Mon. 05 Jan
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AUD 0.0795

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250 mA60 V2.4 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel10 V Enhancement  
BSS123


100V 200mA 5@10V,0.2A 350mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 285519
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between Fri. 09 Jan to Wed. 14 Jan
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AUD 0.0165

Multiples of: 50

                   
SQS484EN-T1_BE3


MOSFET N-CHANNEL 40V
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Vishay 284479
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between Thu. 01 Jan to Mon. 05 Jan
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AUD 0.6865

Multiples of: 1

16 A40 V8 mOhmsN - Channel 2.5 V- 55 C+ 175 C62 WSMD/SMTPOWERPAK - 1212 - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V39 nCEnhancement TrenchFET
FDMC7582


MOSFET PT5 100V/20V NCH POWERTRENCH MOSFET
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ON Semiconductor 281706
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between Fri. 26 Dec to Thu. 01 Jan
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AUD 0.8481

Multiples of: 1

16.7 A25 V5 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtPOWER 33Reelsi1 channel20 V   powertrench
FCH041N65F_F085


Fairchild Semiconductor MOSFET 650V N-Channel SuperFET II MOSFET
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ON Semiconductor 280233
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between Fri. 26 Dec to Thu. 01 Jan
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AUD 15.9625

Multiples of: 450

76 A650 V96 mOhmsn - channel 3 V- 55 C+ 150 C595 Wthrough holeTO - 247 - 3Tubesi1 channel+/- 20 V234 nCenhancement superfet ii
SQ2361ES-T1_BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 268012
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between Thu. 01 Jan to Mon. 05 Jan
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AUD 0.4346

Multiples of: 1

           Cut Tape       
2N7002KX


60V 300mA 1.2V 1PCSNChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 264870
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between Fri. 09 Jan to Wed. 14 Jan
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AUD 0.0123

Multiples of: 20

                   
SI9945BDY-T1-GE3


MOSFET 60V 5.3A 3.1W 58mohm @ 10V
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Vishay 264608
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between Fri. 26 Dec to Thu. 01 Jan
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AUD 0.746

Multiples of: 1

5.3 A60 V58 mOhmsN - Channel 1 V- 55 C+ 150 C3.1 WSmd/SmtSOIC - 8 NarrowReelSi2 Channel10 V13 nCEnhancement Trenchfet
AO3401A


MOSFET P Trench 30V 4A 1.3V @ 250uA 44 mΩ @ 4.3A,10V SOT-23-3L RoHS
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Alpha & Omega 262288
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between Fri. 09 Jan to Wed. 14 Jan
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AUD 0.0596

Multiples of: 10

4 A  P    1.4 WSurface Mount      Enhancement  
CEDM7001 TR


Transistor: N-MOSFET; unipolar; 20V; 0.1A; 0.1W; SOT883L
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Central Semiconductor 259975
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between Thu. 01 Jan to Mon. 05 Jan
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AUD 0.2829

Multiples of: 1

                   
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