MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302-HXY


20V 2.8A 55mΩ@4.5V,2.8A 0.9W N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 339357
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AUD 0.0112
Multiples of: 50

                   
CJ3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 336602
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AUD 0.0463
Multiples of: 10

                   
SI2312BDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 335562
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AUD 0.3194
Multiples of: 1

3.9 A20 V31 mOhmsN - Channel 850 mV- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V7.5 nCEnhancement  
2N7002E-T1-E3


60V 240mA 3O@10V,250mA 350mW N Channel SOT-23 MOSFETs ROHS
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Vishay 334368
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AUD 0.1292
Multiples of: 1

240 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel4.5 V0.6 nCEnhancement  
CMLDM3737 TR


MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
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Central Semiconductor 332400
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AUD 0.2558
Multiples of: 1

   N - Channel     Smd/SmtSOT - 563Cut TapeSi2 Channel     
CPH6355-TL-W


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 328830
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AUD 0.2188
Multiples of: 1

         smd/smtSOT - 26 - 6Cut Tapesi      
2N7002


60V 115mA 1.2Ω@10V,500mA 200mW 2.1V@250uA 4pF@25V N Channel 20pF@25V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI 323980
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AUD 0.0079
Multiples of: 50

                   
BSS123NH6433XTMA1


N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23
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Infineon 320100
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AUD 0.0633
Multiples of: 10000

190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23ReelSi1 Channel20 V900 pCEnhancement  
SI2301


20V 2.2A 700mW 90mΩ@4.5V,1.5A P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 280718
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AUD 0.0114
Multiples of: 50

                   
FDC6420C


SOT-23-6 MOSFETs ROHS
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ON Semiconductor 290
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AUD 0.4476
Multiples of: 1

3 A , 2.2 A20 V70 mOhmsN - Channel, P - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6Cut TapeSi2 Channel12 V Enhancement Powertrench
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