MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CPH5617-TL-E


ON Semiconductor MOSFET NCHNCH 2.5V DRIVE SERIES
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ON Semiconductor 349200
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AUD 0.1223
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150 mA30 V3.7 Ohmsn - channel    250 mWsmd/smtSOT - 25 - 5Reelsi      
AO3415


20V 4.8A 37mO@4.5V,4A 1.5W P Channel SOT-23 MOSFETs ROHS
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Microdiode Electronics 348763
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AUD 0.0399
Multiples of: 10

                   
NTMS4920NR2G


Trans MOSFET N-CH 30V 17A 8-Pin SOIC N T/R
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ON Semiconductor 347721
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AUD 0.502
Multiples of: 1

14.1 A30 V3.6 mOhmsn - channel 1.5 V- 55 C+ 150 C1.46 Wsmd/smtSO - 8Reelsi1 channel20 V58.9 nC   
FDG6303N


MOSFET SC70-6 N-CH 25V
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ON Semiconductor 346290
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AUD 0.1643
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSC - 70 - 6Reel       
PMZB350UPE,315


P-Channel 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006B-3
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Nexperia 334795
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AUD 0.16
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- 1.4 A- 20 V940 mOhmsP - Channel - 450 mV- 55 C+ 150 C715 mWSmd/SmtDFN1006B - 3ReelSi2 Channel+/- 8 V1.3 nCEnhancement  
2N7002,215


MOSFET N-CH TRNCH 60V 300MA
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Nexperia 325493
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AUD 0.0208
Multiples of: 20

300 mA60 V2.8 OhmsN - Channel30 V1 V- 65 C+ 150 C830 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
AO3401


30V 4.4A 1PCSPChannel SOT-23 MOSFETs ROHS
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FOSAN 308498
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AUD 0.0226
Multiples of: 20

                   
CJ3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 282522
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AUD 0.0336
Multiples of: 20

                   
CJ2310 S10


MOSFET N Trench 60V 3A 2V @ 250uA 105 mΩ @ 3A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 227115
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AUD 0.0376
Multiples of: 20

                   
FDN352AP


Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
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ON Semiconductor 55290
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AUD 0.1441
Multiples of: 3000

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