MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN3023L-7


MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 259508
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AUD 0.1212
Multiples of: 1

6.2 A30 V25 mOhmsN - Channel 800 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V18.4 nCEnhancement  
DMP2104LP-7


20V 1.5A 500mW 150mO@4.5V,900mA P Channel X1-DFN1411-3 MOSFETs ROHS
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Diodes Incorporated 256059
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AUD 0.1811
Multiples of: 1

1.5 A20 V150 mOhmsP - Channel 450 mV- 55 C+ 150 C500 mWSmd/SmtDFN1411 - 3Cut TapeSi1 Channel4.5 V Enhancement  
AO3401


30V 4.2A 65mO@10V,4.2A 350mW P Channel SOT-23 MOSFETs ROHS
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TWGMC 243819
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AUD 0.0326
Multiples of: 10

                   
SQJ479EP-T1_BE3


MOSFET P-CHANNEL 80-V (D-S) 175C MOSFET
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Vishay 240139
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AUD 0.9784
Multiples of: 1

32 A80 V33 mOhmsP - Channel 2.5 V- 55 C+ 175 C68 WSMD/SMTPOWERPAK - SO - 8 - 4Cut Tape , ReelSi1 Channel- 20 V , + 20 V90 nCEnhancement  
2N7002ET1G


N-Channel 60 V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 235710
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AUD 0.0263
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
PMV55ENEAR


MOSFET PMV55ENEA/TO-236AB/REEL 7" Q3/
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Nexperia 234431
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AUD 0.2132
Multiples of: 1

3.1 A60 V60 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.19 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V12.7 nCEnhancement  
BSS138


50V 340mA 2.5@10V,0.34A 350mW 1.6V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 233673
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AUD 0.0154
Multiples of: 50

                   
DMP10H400SEQ-13


MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A
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Diodes Incorporated 232800
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AUD 0.2748
Multiples of: 2500

2.3 A100 V300 mOhmsP - Channel 3 V- 55 C+ 150 C13.7 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel20 V17.5 nCEnhancementAec - Q101 
DMP3085LSD-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9A
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Diodes Incorporated 231337
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AUD 0.132
Multiples of: 1

- 3.9 A , - 3.9 A- 30 v , - 30 V70 mOhms , 70 mOhmsP - Channel+/- 20 V- 3 V- 55 C+ 150 C1.1 WSmd/SmtSO - 8Reel-2 Channel20 V11 nCEnhancement  
BSS138-7-F


Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
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Diodes Incorporated 214855
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AUD 0.0222
Multiples of: 20

200 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
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