MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMS4920NR2G


Trans MOSFET N-CH 30V 17A 8-Pin SOIC N T/R
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ON Semiconductor 352964
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AUD 0.7349
Multiples of: 1

14.1 A30 V3.6 mOhmsn - channel 1.5 V- 55 C+ 150 C1.46 Wsmd/smtSO - 8Reelsi1 channel20 V58.9 nC   
BSS316NH6327XTSA1


Infineon Technologies MOSFET N-Ch 30V 1.4A SOT-23-3
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Infineon 349200
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AUD 0.0549
Multiples of: 3000

1.4 A30 V119 mOhmsN - Channel 1.6 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 3Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
BSS127H6327XTSA2


Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
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Infineon 349200
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AUD 0.0955
Multiples of: 3000

            Sipmos      
CPH5617-TL-E


ON Semiconductor MOSFET NCHNCH 2.5V DRIVE SERIES
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ON Semiconductor 349200
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AUD 0.1421
Multiples of: 1

150 mA30 V3.7 Ohmsn - channel    250 mWsmd/smtSOT - 25 - 5Reelsi      
CJ3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 65 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 347788
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AUD 0.0349
Multiples of: 10

                   
AO3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Hottech 347376
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AUD 0.0272
Multiples of: 20

                   
NDS351AN


Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
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ON Semiconductor 345320
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AUD 0.1942
Multiples of: 1

   N Channel               
DMC3071LVT-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 340599
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AUD 0.1591
Multiples of: 1

4.6 A , 3.3 A30 V50 mOhms , 95 mOhmsN - Channel, P - Channel 1 v , 2.5 V- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V4.5 nC , 6.5 nCEnhancement  
SI2302-HXY


20V 2.8A 55mΩ@4.5V,2.8A 0.9W N Channel SOT-23 MOSFETs ROHS
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HXY MOS 339357
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AUD 0.0112
Multiples of: 50

                   
BSD235CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 0.95/-0.53A; 0.5W
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Infineon 317190
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AUD 0.0868
Multiples of: 3000

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