MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3400


30V 5.8A 1.5W 35mΩ@10V,5.8A 1.2V@250uA 77pF@15V N Channel 1050pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

GOODWORK 678786
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AUD 0.023
Multiples of: 20

                   
FDFS2P753Z


MOSFET -30V -3A 115 OHM PowerTrenchAr MOSFET
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ON Semiconductor 405217
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AUD 0.4965
Multiples of: 1

3 A30 V115 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSO - 8ReelSi1 Channel25 V Enhancement Powertrench
2N7002 TR


MOSFET N-Ch 60V .2A
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Central Semiconductor 386609
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AUD 0.1654
Multiples of: 1

115 mA60 V3.7 OhmsN - Channel 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel40 V592 pCEnhancement  
SQ2315ES-T1_BE3


MOSFET P-CHANNEL 12V D-S
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Vishay 376974
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AUD 0.3012
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           Cut Tape       
DMG6602SVTQ-7


Diodes Incorporated MOSFET 30V Vds 20V Vgs Complmtry Enh FET
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Diodes Incorporated 371833
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AUD 0.1478
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3.4 A , - 2.8 A30 v , - 30 V100 mOhms , 140 mOhmsN - Channel, P - Channel 1 v , - 2.3 V- 55 C+ 150 C1.27 WSmd/SmtTSOT - 26 - 6ReelSi2 Channel+/- 20 v , +/- 20 V9 nC , 7 nCEnhancementAec - Q101 
FDC5614P


Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
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ON Semiconductor 370860
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AUD 0.272
Multiples of: 1

            Powertrench®      
IPB65R150CFDATMA1


Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3
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Infineon 369570
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AUD 4.1278
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            Coolmos      
BSS127H6327XTSA2


Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
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Infineon 363750
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AUD 0.1037
Multiples of: 3000

            Sipmos      
BSS123NH6433XTMA1


N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23
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Infineon 19179
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AUD 0.064
Multiples of: 1

190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23ReelSi1 Channel20 V900 pCEnhancement  
FDPF5N50NZ


MOSFET UniFET2 500V N-chan
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ON Semiconductor 1021
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AUD 1.442
Multiples of: 1

4.5 A500 V1.38 OhmsN - Channel 5 V- 55 C+ 125 C30 WThrough HoleTO - 220FTubeSi1 Channel25 V9 nC  Unifet
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