MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CPH6355-TL-W


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 328717
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AUD 0.1965
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         smd/smtSOT - 26 - 6Cut Tapesi      
DMN2230UQ-7


MOSFET 20V N-Ch Enh FET 20Vdss 2.0A 7A 600mW
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Diodes Incorporated 325920
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AUD 0.209
Multiples of: 3000

2 A20 V110 mOhmsN - Channel 500 mV- 55 C+ 150 C600 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V2.3 nCEnhancementAec - Q101 
IRLR2905ZTRLPBF


Trans MOSFET N-CH 55V 60A 3-Pin(2+Tab) DPAK T/R
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Infineon 319033
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AUD 0.6808
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60 A55 V13.5 mOhmsN - Channel 3 V + 175 C110 WSmd/SmtDPAKReelSi1 Channel 35 nC   
FDG6303N


MOSFET SC70-6 N-CH 25V
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ON Semiconductor 314280
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AUD 0.1716
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSC - 70 - 6Reel       
AO3401


30V 4.2A 65mO@10V,4.2A 350mW P Channel SOT-23 MOSFETs ROHS
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TWGMC 313213
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AUD 0.0361
Multiples of: 20

                   
BSS123LT1G


MOSFET 100V 170mA N-Channel
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ON Semiconductor 313125
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AUD 0.0421
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170 mA100 V6 OhmsN - Channel 1.6 V- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
2N7002K-T1-GE3


N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 311428
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AUD 0.0451
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300 mA60 V2 OhmsN - Channel 1 V- 55 C+ 125 C0.35 WSmd/SmtSOT - 23ReelSi1 Channel10 V0.4 nCEnhancement  
BSS316NH6327XTSA1


Infineon Technologies MOSFET N-Ch 30V 1.4A SOT-23-3
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Infineon 311370
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AUD 0.0648
Multiples of: 3000

1.4 A30 V119 mOhmsN - Channel 1.6 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 3Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
FDS4897AC


Transistor: N/P-MOSFET; unipolar; 40/-40V; 6.1/5.2A; 2W; SO8
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ON Semiconductor 310788
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AUD 0.5129
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            powertrench®      
HL6042


20V 4A 1.5W 43m@4.5V,4A 900mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 296878
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AUD 0.0365
Multiples of: 20

                   
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