MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS123


100V 200mA 5@10V,0.2A 350mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

hongjiacheng 285519
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AUD 0.0165
Multiples of: 50

                   
SQS484EN-T1_BE3


MOSFET N-CHANNEL 40V
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Vishay 284479
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AUD 0.6865
Multiples of: 1

16 A40 V8 mOhmsN - Channel 2.5 V- 55 C+ 175 C62 WSMD/SMTPOWERPAK - 1212 - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V39 nCEnhancement TrenchFET
SN7002WH6327XTSA1


N-Channel 60 V 230mA (Ta) 500mW (Ta) Surface Mount PG-SOT323
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Infineon 279360
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AUD 0.0546
Multiples of: 3000

230 mA60 V2.3 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 323 - 3Cut TapeSi1 Channel20 V1 nCEnhancement  
DMP2104LP-7


20V 1.5A 500mW 150mO@4.5V,900mA P Channel X1-DFN1411-3 MOSFETs ROHS
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Diodes Incorporated 272845
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AUD 0.1624
Multiples of: 1

1.5 A20 V150 mOhmsP - Channel 450 mV- 55 C+ 150 C500 mWSmd/SmtDFN1411 - 3Cut TapeSi1 Channel4.5 V Enhancement  
SQ2361ES-T1_BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 268012
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AUD 0.4346
Multiples of: 1

           Cut Tape       
DMN53D0LDW-7


MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
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Diodes Incorporated 267248
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AUD 0.0663
Multiples of: 1

360 mA50 V1.6 OhmsN - Channel 800 mV- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel10 V0.6 nC , 0.6 nCEnhancement  
2N7002KX


60V 300mA 1.2V 1PCSNChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 264870
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AUD 0.0123
Multiples of: 20

                   
DMN3023L-7


MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
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Diodes Incorporated 261226
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AUD 0.1431
Multiples of: 1

6.2 A30 V25 mOhmsN - Channel 800 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V18.4 nCEnhancement  
CEDM7001 TR


Transistor: N-MOSFET; unipolar; 20V; 0.1A; 0.1W; SOT883L
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Central Semiconductor 259975
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AUD 0.2829
Multiples of: 1

                   
IRF1310NSTRLPBF


N-Channel 100 V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK
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Infineon 187016
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AUD 1.294
Multiples of: 800

42 A100 V36 mOhmsN - Channel20 V   3.8 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V73.3 nC   
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