MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP10H400SEQ-13


MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 223100
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AUD 0.2666
Multiples of: 2500

2.3 A100 V300 mOhmsP - Channel 3 V- 55 C+ 150 C13.7 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel20 V17.5 nCEnhancementAec - Q101 
FDD5614P


MOSFET 60V P-Ch PowerTrench
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ON Semiconductor 222660
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AUD 0.497
Multiples of: 1

15 A60 V76 mOhmsP - Channel  - 55 C+ 175 C42 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
FDD3706


N-Channel 20 V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount TO-252AA
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ON Semiconductor 221956
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AUD 1.0833
Multiples of: 1

50 A20 V9 mOhmsn - channel  - 55 C+ 175 C3.8 Wsmd/smtTO - 252AAReelsi1 channel12 V enhancement powertrench
SI3440DV-T1-GE3


Vishay Semiconductors MOSFET 150V 1.5A 2.0W 375mohm 10V
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Vishay 220516
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AUD 0.1892
Multiples of: 1

1.5 A150 V375 mOhmsN - Channel20 V - 55 C+ 150 C2 WSmd/SmtTSOP - 6Reel       
AO3415


20V 4.8A 37mO@4.5V,4A 1.5W P Channel SOT-23 MOSFETs ROHS
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Microdiode Electronics 219901
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AUD 0.0426
Multiples of: 10

                   
DMP2104LP-7


20V 1.5A 500mW 150mO@4.5V,900mA P Channel X1-DFN1411-3 MOSFETs ROHS
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Diodes Incorporated 219878
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AUD 0.1757
Multiples of: 1

1.5 A20 V150 mOhmsP - Channel 450 mV- 55 C+ 150 C500 mWSmd/SmtDFN1411 - 3Cut TapeSi1 Channel4.5 V Enhancement  
IPA60R950C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 4.4A; 26W; TO220FP
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Infineon 216950
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AUD 1.0884
Multiples of: 1

            Coolmos C6      
RK7002BMT116


N-Channel 60 V 250mA (Ta) 200mW (Ta) Surface Mount SST3
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ROHM 212410
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AUD 0.0206
Multiples of: 20

250 mA60 V2.4 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
AO3407A


MOSFET P Trench 30V 4.1A 3V @ 250uA 52 mΩ @ 4.1A,10V SOT-23 RoHS
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Youtai 210160
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AUD 0.0274
Multiples of: 20

                   
DMP3085LSD-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.9A
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Diodes Incorporated 208627
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AUD 0.133
Multiples of: 1

- 3.9 A , - 3.9 A- 30 v , - 30 V70 mOhms , 70 mOhmsP - Channel+/- 20 V- 3 V- 55 C+ 150 C1.1 WSmd/SmtSO - 8Reel-2 Channel20 V11 nCEnhancement  
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