MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2301


20V 2.2A 700mW 90mΩ@4.5V,1.5A P Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yongyutai Electronics 375923
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AUD 0.0167
Multiples of: 50

                   
CJE3134K


SOT-523-3 MOSFETs ROHS
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Changjing Electronics Technology 295423
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AUD 0.033
Multiples of: 20

                   
DMN6140L-13


Diodes Incorporated MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
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Diodes Incorporated 294957
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AUD 0.0791
Multiples of: 1

2.3 A60 V140 mOhmsN - Channel 3 V- 55 C+ 150 C1.3 WSmd/SmtSOT23Reel-1 Channel+/- 20 V8.6 nCEnhancement  
SI2301A


MOSFET P Trench 20V 2.8A 1V @ 250uA 142 mΩ @ 2A,2.5V SOT-23 RoHS
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Youtai 288807
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AUD 0.0238
Multiples of: 20

                   
SQS484EN-T1_BE3


MOSFET N-CHANNEL 40V
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Vishay 284479
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AUD 0.6865
Multiples of: 1

16 A40 V8 mOhmsN - Channel 2.5 V- 55 C+ 175 C62 WSMD/SMTPOWERPAK - 1212 - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V39 nCEnhancement TrenchFET
FDMC7582


MOSFET PT5 100V/20V NCH POWERTRENCH MOSFET
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ON Semiconductor 281706
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AUD 0.7854
Multiples of: 1

16.7 A25 V5 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtPOWER 33Reelsi1 channel20 V   powertrench
2N7002K


60V 340mA 350mW 900m@10V,500mA 2.5V@1mA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 279748
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AUD 0.0199
Multiples of: 50

                   
BSS123K-TP


MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W
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Micro Commercial Components (MCC) 279360
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AUD 0.0483
Multiples of: 3000

           Cut Tape       
BSS123N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 277148
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AUD 0.069
Multiples of: 1

190 mA100 V2.4 OhmsN - Channel 1.9 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
NVTFS5C466NLTAG


MOSFET AFSM T6 40V LL U8FL
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ON Semiconductor 270955
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AUD 0.7697
Multiples of: 1

51 A40 V6.1 mOhmsN - Channel 1.2 V- 55 C+ 175 C38 WSmd/SmtWDFN - 8Cut TapeSi1 Channel20 V16 nCEnhancementAec - Q101 
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