MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJE8408_R1_00001


MOSFET /E08/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI08/PJ///
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Panjit 188971
Ships to you
between Thu. 01 Jan to Mon. 05 Jan
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AUD 0.0728

Multiples of: 1

500 mA20 V3 OhmsN - Channel 900 mV- 55 C+ 150 C300 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V1.4 nCEnhancement  
DMP4047SSD-13


Diodes Incorporated MOSFET Dual P-Ch -40V ENH Min RDSon -20VGss
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Diodes Incorporated 186725
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between Fri. 26 Dec to Thu. 01 Jan
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AUD 0.4948

Multiples of: 2500

- 6.5 A , - 6.5 A- 40 v , - 40 V45 mOhms , 45 mOhmsP - Channel - 1 v , - 1 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8ReelSi2 Channel20 v , 20 V10.6 nC , 16 nCEnhancement  
NTLGF3501NT2G


Trans MOSFET N-CH 20V 3.4A 6-Pin DFN EP T/R
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ON Semiconductor 186240
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between Fri. 26 Dec to Thu. 01 Jan
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AUD 0.8125

Multiples of: 1

5.8 A20 V9 mOhmsn - channel  - 55 C+ 150 C1.74 Wsmd/smtDFN - 6Cut Tapesi1 channel20 V enhancement  
PMZ1000UN,315


MOSFET MOSFET N-CH
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Nexperia 184300
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between Fri. 26 Dec to Thu. 01 Jan
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AUD 0.1646

Multiples of: 1

480 mA30 V1 Ohmsn - channel     smd/smtSOT - 883 - 3Reelsi1 channel     
SI2307CDS-T1-BE3


P-Channel 30V 2.7A (Ta), 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 183636
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between Thu. 01 Jan to Mon. 05 Jan
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AUD 0.2479

Multiples of: 1

          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
FDZ193P


MOSFET MFET-20V P-CH 1.7V PowerTrench WL-CSP
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ON Semiconductor 183328
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between Fri. 26 Dec to Thu. 01 Jan
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AUD 0.4108

Multiples of: 1

3 A20 V66 mOhmsp - channel  - 55 C+ 150 C1.5 Wsmd/smtWL - CSPReelsi1 channel12 V enhancement powertrench
FDY301NZ


Transistor: N-MOSFET; unipolar; 20V; 0.2A; 0.625W; SOT523
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ON Semiconductor 182119
Ships to you
between Fri. 26 Dec to Thu. 01 Jan
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AUD 0.1726

Multiples of: 1

            powertrench®      
MCH6661-TL-W


ON Semiconductor MOSFET NCH 1.7A 30V SOT-363
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ON Semiconductor 180177
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between Fri. 26 Dec to Thu. 01 Jan
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AUD 0.2854

Multiples of: 1

1.8 A30 V188 mOhmsn - channel20 V2.6 V- 55 C+ 150 C0.8 Wsmd/smtSOT - 363 - 6Reelsi2 channel20 V2 nC   
SQ2337ES-T1_BE3


MOSFET P-CHANNEL 80V D-S
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Vishay 175551
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between Thu. 01 Jan to Mon. 05 Jan
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AUD 0.3672

Multiples of: 1

2.2 A80 V290 mOhmsP - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V11.5 nCEnhancement TrenchFET
IRLML6246TRPBF


MOSFET N Trench 20V 4.1A 1.1V @ 5uA 46 mΩ @ 4.1A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 157140
Ships to you
between Fri. 26 Dec to Thu. 01 Jan
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AUD 0.1033

Multiples of: 3000

4.1 A20 V46 mOhmsN - Channel    1.3 WSmd/SmtSOT - 23ReelSi1 Channel12 V3.5 nC   
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