MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NX3008PBK,215


P-Channel 30 V 230mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 251451
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AUD 0.0409
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230 mA30 V4.1 OhmsP - Channel 600 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V0.55 nCEnhancement  
Hot 2N7002-T1-E3


N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount TO-236
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Vishay 233117
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AUD 0.638
Multiples of: 1

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C200 mW (1/5 w)Smd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
NX138AKR


Transistor: N-MOSFET; unipolar; 60V; 0.12A; 0.265W; SOT23
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Nexperia 227213
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AUD 0.0283
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BSS138W


50V 220mA 3.5@10V,0.22A 300mW 1.5V@250uA 1 N-Channel SOT-323 MOSFETs ROHS
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hongjiacheng 213632
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AUD 0.0189
Multiples of: 20

                   
AP2302B


MOSFET N Trench 20V 2.8A 1.2V @ 50uA 55 mΩ @ 2.8A,4.5V SOT-23 RoHS
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Quan Li 210587
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AUD 0.0216
Multiples of: 50

                   
5N10-MS


100V 5A N Channel SOT-23 MOSFETs ROHS
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MSKSEMI 205989
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AUD 0.0341
Multiples of: 20

                   
BSS816NWH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
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Infineon 125682
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AUD 0.0676
Multiples of: 1

            Optimos 2      
BSS138K


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 115129
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AUD 0.012
Multiples of: 10

                   
NDC7003P


Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
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ON Semiconductor 2260
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AUD 0.226
Multiples of: 1

            Powertrench®      
FDD3706


N-Channel 20 V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W (Tc) Surface Mount TO-252AA
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ON Semiconductor 0
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AUD 0.9311
Multiples of: 1

50 A20 V9 mOhmsn - channel  - 55 C+ 175 C3.8 Wsmd/smtTO - 252AAReelsi1 channel12 V enhancement powertrench
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