MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002P,215


MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 209869
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AUD 0.0222
Multiples of: 20

   N - Channel  - 55 C150 C Smdsmt Reel       
NTNS3A65PZT5G


MOSFET PFET SOT883 20V 235MA
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ON Semiconductor 200720
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AUD 0.1175
Multiples of: 1

- 281 mA- 20 V1.3 Ohmsp - channel     smd/smtXDFN3 - 3Reelsi      
L2N7002KLT1G


MOSFET N Trench 60V 320mA 2.5V @ 250uA 2.3 O @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Leshan 187792
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AUD 0.0179
Multiples of: 50

                   
NTLGF3501NT2G


Trans MOSFET N-CH 20V 3.4A 6-Pin DFN EP T/R
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ON Semiconductor 186240
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AUD 0.705
Multiples of: 1

5.8 A20 V9 mOhmsn - channel  - 55 C+ 150 C1.74 Wsmd/smtDFN - 6Cut Tapesi1 channel20 V enhancement  
DMP2200UDW-7


Diodes Incorporated MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A
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Diodes Incorporated 183330
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AUD 0.1348
Multiples of: 3000

   P - Channel       Reel 2 Channel     
IPW65R150CFDFKSA1


Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO247-3
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Infineon 183213
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AUD 4.3973
Multiples of: 1

            coolmos      
AO3400-ED


20V 3A 0.9W 55mΩ@10V,2.8A N Channel SOT-23 MOSFETs ROHS
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HXY MOS 183087
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AUD 0.0164
Multiples of: 50

                   
MMFTP3401


Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23
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Diotec 153476
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AUD 0.064
Multiples of: 1

                   
2N7002


Transistor: N-MOSFET; unipolar; 60V; 0.28A; 0.35W; SOT23
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Diotec 61988
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AUD 0.066
Multiples of: 1

                   
PMZB290UNE2YL


N-Channel 20 V 1.2A (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3
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Nexperia 58200
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AUD 0.0634
Multiples of: 10000

1.2 A20 V320 mOhmsN - Channel 450 mV- 55 C+ 150 C715 mWSmd/SmtDFN1006B - 3ReelSi1 Channel4.5 V0.8 nCEnhancement  
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