MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002KX


60V 300mA 1.2V 1PCSNChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 267661
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AUD 0.0137
Multiples of: 20

                   
BSS84PW H6327


Infineon Technologies MOSFET P-Ch -60V 150mA SOT-323-3
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Infineon 266598
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AUD 0.0629
Multiples of: 1

- 150 mA- 60 V8 OhmsP - Channel+/- 20 V- 1.5 V- 55 C+ 150 C300 mWSmd/SmtPG - SOT - 323Reel-1 Channel20 V1 nCEnhancementAec - Q101 
CEDM7001 TR


Transistor: N-MOSFET; unipolar; 20V; 0.1A; 0.1W; SOT883L
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Central Semiconductor 258963
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AUD 0.264
Multiples of: 1

                   
2N7002K


60V 500mA 2@10V
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JSMSEMI 249581
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AUD 0.0093
Multiples of: 50

                   
AO3401-ED


20V 3A 110mΩ@10V,2A 0.7W P Channel SOT-23 MOSFETs ROHS
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HXY MOS 246622
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AUD 0.0162
Multiples of: 50

                   
SQJ479EP-T1_BE3


MOSFET P-CHANNEL 80-V (D-S) 175C MOSFET
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Vishay 240139
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AUD 0.9784
Multiples of: 1

32 A80 V33 mOhmsP - Channel 2.5 V- 55 C+ 175 C68 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V90 nCEnhancement  
2N7002BKS,115


Mosfet Array 2 N-Channel (Dual) 60V 300mA 295mW Surface Mount 6-TSSOP
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Nexperia 231596
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AUD 0.0581
Multiples of: 1

300 mA60 V2.8 OhmsN - Channel    830 mWSmd/SmtSOT - 23 - 3Reel       
AO3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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Hottech 225942
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AUD 0.0415
Multiples of: 10

                   
BSS138N H6327


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 184025
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AUD 0.0534
Multiples of: 1

230 mA60 V2.2 OhmsN - Channel 600 mV- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel20 V1.4 nCEnhancement  
BSS84LT1G


MOSFET 50V 130mA P-Channel
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ON Semiconductor 18265
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AUD 0.0455
Multiples of: 10

130 mA50 V10 OhmsP - Channel  - 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V2.2 nCEnhancement  
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