MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDC608PZ


Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
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ON Semiconductor 151139
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AUD 0.2995
Multiples of: 1

   P Channel               
BSS123


MOSFET N Trench 100V 170mA 2V @ 1mA 6 Ω @ 170mA,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 148914
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AUD 0.0197
Multiples of: 20

                   
2N7002DW


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 148410
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AUD 0.0794
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSC - 70 - 6ReelSi2 Channel20 V Enhancement  
IRFML8244TRPBF


MOSFET N Trench 25V 5.8A 2.35V @ 10uA 24 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 148410
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AUD 0.1177
Multiples of: 3000

                   
AO3401A


MOSFET P Trench 30V 4.2A 2V @ 250uA 50 mΩ @ 4.1A,10V SOT-23 RoHS
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Bourne 148371
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AUD 0.0463
Multiples of: 20

                   
AP2N7002


MOSFET SOT23 RoHS
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Quan Li 148361
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AUD 0.0276
Multiples of: 50

                   
8205


20V 6A 19mΩ 1.2V N Channel SOT-23-6 MOSFETs ROHS
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HL 148254
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AUD 0.021
Multiples of: 20

                   
2N7002


60V 115mA 5@10V,0.5A 225mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 146955
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AUD 0.0156
Multiples of: 50

                   
AO3400-HXY


30V 5.8A 28mΩ@10V,5.8A 1.4W N Channel SOT-23 MOSFETs ROHS
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HXY MOS 146130
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AUD 0.0174
Multiples of: 50

                   
SI2302CDS-T1-GE3


N-Channel 20 V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 145218
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AUD 0.0596
Multiples of: 10

2.9 A20 V57 mOhmsN - Channel 400 mV- 55 C+ 150 C860 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V5.5 nCEnhancement Trenchfet
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