MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSM002N06T2L


ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 0.25A
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ROHM 191511
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AUD 0.087
Multiples of: 1

250 mA60 V2.4 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel10 V Enhancement  
NDT2955


Transistor: P-MOSFET; unipolar; -60V; -2.5A; 3W; SOT223
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ON Semiconductor 190120
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AUD 0.4058
Multiples of: 4000

                   
CJ2301 S1


MOSFET P Trench 20V 2.3A 1V @ 250uA 112 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Changjing Electronics Technology 190081
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AUD 0.0367
Multiples of: 20

                   
AO3401CI-MS


20V 3A 90mΩ@4.5V,2.8A 350mW 1V@250uA 55pF@10V P Channel 405pF@10V 5.5nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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MSKSEMI 189635
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AUD 0.0218
Multiples of: 20

                   
NTLGF3501NT2G


Trans MOSFET N-CH 20V 3.4A 6-Pin DFN EP T/R
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ON Semiconductor 186240
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AUD 0.7366
Multiples of: 1

5.8 A20 V9 mOhmsn - channel  - 55 C+ 150 C1.74 Wsmd/smtDFN - 6Cut Tapesi1 channel20 V enhancement  
LP3401LT1G


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 70 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Leshan 184464
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AUD 0.0524
Multiples of: 10

                   
FDN338P


Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
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ON Semiconductor 183330
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AUD 0.1959
Multiples of: 3000

            Powertrench®      
FDZ193P


MOSFET MFET-20V P-CH 1.7V PowerTrench WL-CSP
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ON Semiconductor 183328
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AUD 0.3806
Multiples of: 1

3 A20 V66 mOhmsp - channel  - 55 C+ 150 C1.5 Wsmd/smtWL - CSPReelsi1 channel12 V enhancement powertrench
IPW65R150CFDFKSA1


Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO247-3
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Infineon 183213
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AUD 4.5942
Multiples of: 1

            coolmos      
IRLML6244TRPBF


MOSFET N Trench 20V 6.3A 1.1V @ 10uA 21 mΩ @ 6.3A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 180420
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AUD 0.1119
Multiples of: 3000

            Hexfet®      
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