MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138DW-7-F


Trans MOSFET N-CH 50V 0.2A Automotive 6-Pin SOT-363 T/R
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Diodes Incorporated 168780
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AUD 0.0916
Multiples of: 3000

   N - Channel  - 55 C150 C Smdsmt Reel       
PMGD280UN,115


Mosfet Array 2 N-Channel (Dual) 20V 870mA 400mW Surface Mount 6-TSSOP
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Nexperia 168740
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AUD 0.1297
Multiples of: 1

870 mA20 V340 mOhmsN - Channel 450 mV- 55 C+ 150 C0.4 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.89 nCEnhancement  
DMP3125L-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 164896
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AUD 0.1018
Multiples of: 1

2.5 A30 V76 mOhmsP - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3 Si1 Channel10 V3.1 nCEnhancement  
CJ3404


MOSFET N Trench 30V 5.8A 3V @ 250uA 30 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 164402
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AUD 0.0453
Multiples of: 10

                   
DMN62D0U-7


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 162960
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AUD 0.0569
Multiples of: 3000

380 mA60 V2 OhmsN - Channel 500 mV- 55 C+ 150 C590 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V0.5 nCEnhancement  
NDS355AN


Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
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ON Semiconductor 162960
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AUD 0.1768
Multiples of: 3000

   N Channel               
DMP4047SSD-13


Diodes Incorporated MOSFET Dual P-Ch -40V ENH Min RDSon -20VGss
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Diodes Incorporated 162475
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AUD 0.48
Multiples of: 2500

- 6.5 A , - 6.5 A- 40 v , - 40 V45 mOhms , 45 mOhmsP - Channel - 1 v , - 1 V- 55 C+ 150 C1.8 WSmd/SmtSO - 8ReelSi2 Channel20 v , 20 V10.6 nC , 16 nCEnhancement  
AP2302B


MOSFET N Trench 20V 2.8A 1.2V @ 50uA 55 mΩ @ 2.8A,4.5V SOT-23 RoHS
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Quan Li 160680
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AUD 0.0219
Multiples of: 50

                   
JSM2301S


20V 2.3A 90mΩ@4.5V,2.8A 350mW 1V@250uA 55pF@10V P Channel 405pF@10V 5.4nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI 159912
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AUD 0.0091
Multiples of: 50

                   
VND7NV04TR-E


MOSFET N-Ch 42V 6A OmniFET
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STMicroelectronics 2004
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AUD 1.3409
Multiples of: 1

         Smd/SmtTO - 252Reel       
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