MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR120NTRPBF


MOSFET N Trench 100V 9.4A 4V @ 250uA 210 mΩ @ 5.6A,10V TO-252-2 (DPAK) RoHS
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Infineon 180594
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AUD 0.2363
Multiples of: 5

   N - Channel  - 55 C+ 175 C Smd/SmtDPAKReel       
SI2301A


MOSFET P Trench 20V 2.8A 1V @ 250uA 142 mΩ @ 2A,2.5V SOT-23 RoHS
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Youtai 180400
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AUD 0.0228
Multiples of: 20

                   
IRL520NSTRLPBF


MOSFET MOSFT 100V 10A 180mOhm 13.3nC LogLv
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Infineon 178955
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AUD 0.8425
Multiples of: 1

10 A100 V180 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel16 V13.3 nC   
BSS84AKM,315


P-Channel 50 V 230mA (Ta) 340mW (Ta), 2.7W (Tc) Surface Mount SOT-883
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Nexperia 178547
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AUD 0.0366
Multiples of: 10

- 230 mA- 50 V7.5 OhmsP - Channel    340 mWSmd/SmtDFN - 1006B - 3ReelSi1 Channel 0.35 nC   
HL3402


30V 2.5A 50m@10V,2.5A 1W 1.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 177801
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AUD 0.0326
Multiples of: 20

                   
CJ3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 177432
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AUD 0.0374
Multiples of: 20

                   
SI2302CDS-T1-E3


MOSFET 20V 2.9A 0.86W 57mohm @ 4.5V
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Vishay 172221
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AUD 0.2043
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
CJ2301 S1


MOSFET P Trench 20V 2.3A 1V @ 250uA 112 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 161058
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AUD 0.0278
Multiples of: 20

                   
DMG1013T-7


MOSFET MOSFET P-CHANNEL SOT-523
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Diodes Incorporated 151184
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AUD 0.0521
Multiples of: 10

460 mA20 V1 OhmsP - Channel  - 55 C+ 150 C270 mWSmd/SmtSOT - 523 - 3ReelSi1 Channel6 V622.4 pCEnhancement  
2N7002DWH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
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Infineon 164
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AUD 0.082
Multiples of: 1

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