MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS123K-TP


MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) 372480
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AUD 0.0495
Multiples of: 3000

           Cut Tape       
FDD6N25TM


Transistor: N-MOSFET; unipolar; 250V; 2.6A; 0.05W; TO252
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ON Semiconductor 137960
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AUD 0.4988
Multiples of: 1

            unifet      
STL58N3LLH5


MOSFET Automotive N-channel 30 V, 0.0076 Ohm, 56 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 136770
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AUD 1.027
Multiples of: 3000

56 A30 V9 mOhmsN - Channel 1 v to 2.5 V- 55 C+ 175 C62.5 WSmd/SmtPowerflat - 8Cut Tape-1 Channel22 v / - 20 V6.5 nCEnhancementAec - Q101Stripfet
DMC2038LVT-7


MOSFET MOSFET BVDSS: 8V-24V 8V-24V,TSOT23,3K
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Diodes Incorporated 136279
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AUD 0.1152
Multiples of: 1

4.5 A , 3.1 A20 V35 mOhms , 74 mOhmsN - Channel, P - Channel 400 mV- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel4.5 V12 nC , 14 nCEnhancement  
FCPF22N60NT


MOSFET 600V N-Channel SupreMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 134830
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AUD 4.9851
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22 A600 V140 mOhmsn - channel  - 55 C+ 150 C39 Wthrough holeTO - 220FTubesi1 channel30 V enhancement supremos
BSD235NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 134583
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AUD 0.1479
Multiples of: 1

950 mA20 V266 mOhms , 266 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi2 Channel12 V320 pC , 320 pCEnhancementAec - Q101 
IPA60R750E6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 5.7A; 27W; TO220FP
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Infineon 134005
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AUD 1.6454
Multiples of: 1

            coolmos e6      
EM6J1T2R


ROHM Semiconductor MOSFET FET Dual Pch -20V -200mA EMT6
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ROHM 133869
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AUD 0.2148
Multiples of: 1

- 200 mA- 20 V1.2 OhmsP - Channel    150 mWSmd/SmtEMT - 6ReelSi2 Channel 1.4 nC   
BSS215PH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
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Infineon 5616
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AUD 0.1065
Multiples of: 1

            Optimos P2      
BSP125H6327XTSA1


Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
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Infineon 451
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AUD 0.3527
Multiples of: 1

            Sipmos      
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