MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDZ193P


MOSFET MFET-20V P-CH 1.7V PowerTrench WL-CSP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 168778
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AUD 0.3643
Multiples of: 1

3 A20 V66 mOhmsp - channel  - 55 C+ 150 C1.5 Wsmd/smtWL - CSPReelsi1 channel12 V enhancement powertrench
BSS123


MOSFET N Trench 100V 170mA 2V @ 1mA 6 Ω @ 170mA,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 168081
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AUD 0.022
Multiples of: 20

                   
LP3407LT1G


MOSFET P Trench 30V 4.1A 3V @ 250uA 70 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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Leshan 167829
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AUD 0.0432
Multiples of: 10

                   
IRF9333TRPBF


MOSFET P Trench 30V 9.2A 2.4V @ 25uA 19.4 mΩ @ 9.2A,10V SOIC-8_150mil RoHS
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Infineon 166840
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AUD 0.4739
Multiples of: 1

9.2 A30 V32.5 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi 20 V14 nC   
DMG1012T-7


MOSFET MOSFET N-CHANNEL SOT-523
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Diodes Incorporated 166549
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AUD 0.1034
Multiples of: 5

630 mA20 V400 mOhmsN - Channel 500 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel4.5 V736.6 pCEnhancement  
FDN338P


Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
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ON Semiconductor 165870
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AUD 0.1562
Multiples of: 3000

            Powertrench®      
BSS84


MOSFET P Trench 50V 130mA 2V @ 1mA 10 Ω @ 100mA,5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 162727
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AUD 0.0204
Multiples of: 20

                   
HL2309


60V 1.25A 340m@10V,1.25A 1.25W 3V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 162232
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AUD 0.0642
Multiples of: 10

                   
NX138AKR


Transistor: N-MOSFET; unipolar; 60V; 0.12A; 0.265W; SOT23
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Nexperia 139736
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AUD 0.0377
Multiples of: 1

                   
RSF014N03TL


MOSFET N-CH 30V 1.4A TUMT3
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ROHM 3188
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AUD 0.2421
Multiples of: 1

1.4 A30 V270 mOhmsN - Channel    800 mWSmd/SmtTUMT - 3ReelSi1 Channel20 V Enhancement  
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