MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RJK0651DPB-00#J5


Trans MOSFET N-CH 60V 25A 5-Pin(4+Tab) LFPAK T/R
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Renesas 173985
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AUD 1.3035
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         Smd/SmtLFPAK - 5Cut TapeSi      
RU1C002ZPTCL


MOSFET 4V Drive Pch MOSFET Drive Pch
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ROHM 172372
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AUD 0.0462
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200 mA- 20 V9.6 OhmsP - Channel - 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel+/- 10 V1.4 nCEnhancement  
2N7002DWH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
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Infineon 170608
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AUD 0.0659
Multiples of: 1

            Optimos      
IRF1310NSTRLPBF


N-Channel 100 V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK
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Infineon 164997
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AUD 1.4816
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42 A100 V36 mOhmsN - Channel20 V   3.8 WSmd/SmtD - PAK - 3ReelSi1 Channel20 V73.3 nC   
AO3400-ED


20V 3A 0.9W 55mΩ@10V,2.8A N Channel SOT-23 MOSFETs ROHS
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HXY MOS 163493
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AUD 0.0156
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IRF6216TRPBF


MOSFET P Trench 150V 2.2A 5V @ 250uA 240 mΩ @ 1.3A,10V SOP-8_150mil RoHS
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Infineon 162960
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AUD 0.5875
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2.2 A150 V240 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V33 nC   
PJE8408_R1_00001


MOSFET /E08/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI08/PJ///
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Panjit 161742
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AUD 0.0754
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500 mA20 V3 OhmsN - Channel 900 mV- 55 C+ 150 C300 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 10 V , 10 V1.4 nCEnhancement  
HL3401


30V 4.4A 1.2W 55m@10V,4.4A 900mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 156810
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AUD 0.0318
Multiples of: 20

                   
BSS123


100V 200mA 5@10V,0.2A 350mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 114149
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AUD 0.0183
Multiples of: 20

                   
NTNS3193NZT5G


MOSFET NFET XLLGA3 20V 230MA
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ON Semiconductor 7760
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AUD 0.1364
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224 mA20 V1.4 OhmsN - Channel+/- 8 V1 V- 55 C+ 150 C120 mWSmd/SmtXLLGA - 3ReelSi1 Channel8 V0.7 nCEnhancement  
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