MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRL520NSTRLPBF


MOSFET MOSFT 100V 10A 180mOhm 13.3nC LogLv
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Infineon 180387
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AUD 0.8802
Multiples of: 1

10 A100 V180 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel16 V13.3 nC   
DMP2035U-7


MOSFET MOSFET P-CHANNEL SOT-23
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Diodes Incorporated 177349
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AUD 0.1239
Multiples of: 5

4.9 A20 V35 mOhmsP - Channel 400 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V15.4 nCEnhancement  
BSS123


MOSFET N Trench 100V 170mA 2V @ 1mA 6 Ω @ 170mA,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 177219
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AUD 0.0222
Multiples of: 20

                   
LBSS138LT1G


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V SOT-23 (SOT-23-3) RoHS
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Leshan 176200
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AUD 0.0175
Multiples of: 50

                   
HL3402


30V 2.5A 50m@10V,2.5A 1W 1.5V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 175220
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AUD 0.0349
Multiples of: 20

                   
BSS84


MOSFET P Trench 50V 130mA 2V @ 1mA 10 Ω @ 100mA,5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 174677
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AUD 0.0204
Multiples of: 20

                   
BSS138


MOSFET N Trench 50V 220mA 1.5V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
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Shikues 172504
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AUD 0.0214
Multiples of: 20

                   
UMW30N06


MOSFET N Trench 60V 25A (Tc) 2.5V @ 250uA 30 mΩ @ 15A,10V TO-252 RoHS
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Youtai 170574
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AUD 0.1253
Multiples of: 5

                   
DMP3098L-7


P-Channel 30 V 3.8A (Ta) 1.08W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 146479
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AUD 0.0794
Multiples of: 10

3.8 A30 V70 mOhmsP - Channel 1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V7.8 nCEnhancement  
BSS84AKM,315


P-Channel 50 V 230mA (Ta) 340mW (Ta), 2.7W (Tc) Surface Mount SOT-883
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Nexperia 194
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AUD 0.5282
Multiples of: 5

- 230 mA- 50 V7.5 OhmsP - Channel    340 mWSmd/SmtDFN - 1006B - 3ReelSi1 Channel 0.35 nC   
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