MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YJQ40G10A


DFN-8(3.3x3.3) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yangjie 137478
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AUD 0.3437
Multiples of: 5

                   
BSS138DW-7-F


Trans MOSFET N-CH 50V 0.2A Automotive 6-Pin SOT-363 T/R
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Diodes Incorporated 134587
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AUD 0.0928
Multiples of: 5

   N - Channel  - 55 C150 C Smdsmt Reel       
BSD235NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 134583
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AUD 0.1479
Multiples of: 1

950 mA20 V266 mOhms , 266 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi2 Channel12 V320 pC , 320 pCEnhancementAec - Q101 
BSD235CH6327XT


MOSFET OptiMOS 2,-P 2 Small Signal Transistor
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Infineon 133872
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AUD 0.1163
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950 mA , 530 mA20 V266 mOhms , 745 mOhmsN And P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
SI3443CDV-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 133664
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AUD 0.3867
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5.97 A20 V100 mOhmsP - Channel 1.5 V- 55 C+ 150 C3.2 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 12 V , + 12 V7.53 nCEnhancement  
PJE8408_R1_00001


MOSFET /E08/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI08/PJ///
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Panjit 132334
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AUD 0.0754
Multiples of: 1

500 mA20 V3 OhmsN - Channel 900 mV- 55 C+ 150 C300 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 10 V , 10 V1.4 nCEnhancement  
AO3407A


MOSFET P Trench 30V 4.1A 3V @ 250uA 52 mΩ @ 4.1A,10V SOT-23 RoHS
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Youtai 131522
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AUD 0.033
Multiples of: 10

                   
IRLU024NPBF


MOSFET N Trench 55V 17A 2V @ 250uA 65 mΩ @ 10A,10V TO-251 (I-PAK) RoHS
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Infineon 123663
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AUD 0.5982
Multiples of: 1

            Hexfet®      
L2N7002DW1T1G


MOSFET 2 N Channel (Dual) 60V 115mA (Tc) 2V @ 250uA 7.5 Ω @ 500mA,10V SC-88 RoHS
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Leshan 123364
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AUD 0.0293
Multiples of: 20

                   
NDS352AP


Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
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ON Semiconductor 113490
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AUD 0.1505
Multiples of: 3000

                   
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