MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MCH6664-TL-W


ON Semiconductor MOSFET PCH 1.5A 30V SOT-363
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ON Semiconductor 142590
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AUD 31.5493
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- 1.5 A- 30 V325 mOhmsp - channel20 V- 2.6 V- 55 C+ 150 C0.8 Wsmd/smtSOT - 363 - 6Reelsi2 channel- 4 V2.2 nCenhancement  
AO3401


New Quadratic Unclassified Data SOT-23 RoHS
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Microdiode Electronics 141833
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AUD 0.04
Multiples of: 20

                   
CJ2305


MOSFET P Trench 12V 4.1A 900mV @ 250uA 45 mΩ @ 3.5A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 138370
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AUD 0.0536
Multiples of: 10

                   
FDD6N25TM


Transistor: N-MOSFET; unipolar; 250V; 2.6A; 0.05W; TO252
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ON Semiconductor 137475
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AUD 0.4261
Multiples of: 1

            unifet      
PJE8408_R1_00001


MOSFET /E08/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI08/PJ///
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Panjit 137366
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AUD 0.0739
Multiples of: 1

500 mA20 V3 OhmsN - Channel 900 mV- 55 C+ 150 C300 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 10 V , 10 V1.4 nCEnhancement  
2N7002


60V 115mA 5@10V,0.5A 225mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 137352
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AUD 0.021
Multiples of: 50

                   
IRLU024NPBF


MOSFET N Trench 55V 17A 2V @ 250uA 65 mΩ @ 10A,10V TO-251 (I-PAK) RoHS
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Infineon 136890
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AUD 0.6343
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            Hexfet®      
BSS138NH6433XTMA1


MOSFET SMALL SIGNAL N-CH
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Infineon 134738
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AUD 0.0804
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230 mA60 V3.5 OhmsN - Channel20 V1.4 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V1 nCEnhancement  
2N7002BKS,115


Mosfet Array 2 N-Channel (Dual) 60V 300mA 295mW Surface Mount 6-TSSOP
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Nexperia 122247
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AUD 0.0591
Multiples of: 1

300 mA60 V2.8 OhmsN - Channel    830 mWSmd/SmtSOT - 23 - 3Reel       
BSZ097N04LS G


Infineon Technologies MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
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Infineon 67777
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AUD 0.4351
Multiples of: 1

12 A40 V9.7 mOhmsN - Channel20 V1.2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel10 V18 nCEnhancement Optimos
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