MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJC7407_R1_00001


MOSFET P Trench 20V 1.3A 1.2V @ 250uA 200 mΩ @ 500mA,1.8V SOT-323 RoHS
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Panjit 117660
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AUD 0.1149
Multiples of: 1

                   
2SK3018


MOSFET N Trench 30V 100mA 1.5V @ 100uA 8 Ω @ 10mA,4V SOT-323 (SC-70) RoHS
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Changjing Electronics Technology 115934
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AUD 0.0228
Multiples of: 20

                   
SSM3K56ACT,L3F


MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V
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Toshiba 113328
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AUD 0.1215
Multiples of: 1

1.4 A20 V840 mOhmsN - Channel 400 mV- 55 C+ 150 C500 mWSmd/SmtCST - 3ReelSi1 Channel+/- 8 V1 nCEnhancement  
AO3415


20V 4A 1.2W 50mΩ@4.5V,4.0A 800mV@250uA 160pF@10V P Channel 1450pF@10V 17.2nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 112423
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AUD 0.0431
Multiples of: 10

                   
2N7002LT3G


MOSFET 60V 115mA N-Channel
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ON Semiconductor 111550
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AUD 0.0483
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
HL2301A


20V 2.3A 700mW 112m@4.5V,2.3A 1V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 109319
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AUD 0.0353
Multiples of: 20

                   
NCV8403BDTRKG


MOSFET SELF PROTECTED FET
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ON Semiconductor 106700
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AUD 1.2948
Multiples of: 2500

15 A42 V53 mOhmsN - Channel 1 V- 40 C+ 150 C2.5 WSmd/SmtDPAK - 3Cut TapeSi1 Channel14 V EnhancementAec - Q100 
BSS169 H6327


Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3
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Infineon 102000
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AUD 0.1239
Multiples of: 5

0.17 A100 V6 OhmsN 2.9 V- 55 C+ 150 C0.36 WSurface MountPG - SOT - 23 - 3Tape And ReelSi1 Channel10 V2.1 nCDepletionAec - Q101 
2N7002K-7


N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 101850
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AUD 0.0422
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
BSS123,215


N-Channel 100 V 150mA (Ta) 250mW (Ta) Surface Mount TO-236AB
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Nexperia 0
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AUD 0.0373
Multiples of: 20

150 mA100 V6 OhmsN - Channel 1 V- 55 C150 C250 mW (1/4 w)SmdsmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
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