MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTRV4101PT1G


ON Semiconductor MOSFET PFET 20V 3.2A 85MO
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 112088
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AUD 0.2315
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- 2.4 A- 20 V70 mOhmsP - Channel8 V - 55 C+ 150 C730 mWSmd/SmtSOT - 23 - 3Reel   7.5 nC   
IPB020N04NGATMA1


Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
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Infineon 111871
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AUD 2.5
Multiples of: 1

            Optimos 3      
2N7002K 72K


60V 300mA 2.8Ω@10V,500mA 225mW 2.5V@250uA N Channel -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 111456
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AUD 0.0129
Multiples of: 50

                   
BSS84


60V 170mA 8@10V,0.17A 225mW 2V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 110919
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AUD 0.0157
Multiples of: 50

                   
3LN01M-TL-H


ON Semiconductor MOSFET SWITCHING DEVICE
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ON Semiconductor 110275
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AUD 0.1218
Multiples of: 1

150 mA30 V5.2 mOhmsN - Channel     Smd/SmtSC - 70 - 3ReelSi1 Channel     
AP40P05


40V 5A 65mΩ@10V,3A 2W P Channel SOT-23-3 MOSFETs ROHS
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Quan Li 109842
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AUD 0.0737
Multiples of: 20

                   
2N7002LT1G


MOSFET 60V 115mA N-Channel
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ON Semiconductor 109537
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AUD 0.0237
Multiples of: 1

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
PSMN5R6-60YLX


MOSFET PSMN5R6-60YL/LFPAK/REEL 7" Q1/
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Nexperia 109157
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AUD 0.8468
Multiples of: 1

100 A60 V5.6 mOhmsN - Channel 1.4 V- 55 C+ 175 C167 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V66.8 nCEnhancement  
STD20NF20


Transistor: N-MOSFET; unipolar; 200V; 11A; 110W; DPAK
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STMicroelectronics 109125
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AUD 1.4632
Multiples of: 2500

                   
IRF640NPBF


MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 11A,10V TO-220 (TO-220-3) RoHS
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Infineon 102596
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AUD 0.2551
Multiples of: 5

18 A200 V150 mOhmsN - Channel  - 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V44.7 nCEnhancement  
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