MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLR120NTRPBF


MOSFET N Trench 100V 10A 2V @ 250uA 185 mΩ @ 6A,10V TO-252-2 (DPAK) RoHS
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Infineon 103615
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AUD 0.3248
Multiples of: 5

11 A100 V265 mOhmsN - Channel  - 55 C+ 175 C39 WSmd/SmtDPAKReelSi1 Channel16 V13.3 nCEnhancement  
YJL3404A


Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
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Yangjie 103062
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AUD 0.0564
Multiples of: 10

            Trench Power Lv      
SI2315BDS-T1-E3


MOSFET 1.8V 3.2A 1.25W
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Vishay 102171
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AUD 0.5845
Multiples of: 1

3 A12 V50 mOhmsP - Channel 450 mV- 55 C+ 150 C0.75 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V8 nCEnhancement Trenchfet
BUK9Y58-75B,115


MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
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Nexperia 101692
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AUD 0.4039
Multiples of: 1

20.73 A75 V53 mOhmsN - Channel 1.25 V- 55 C+ 175 C60.4 WSmd/SmtLFPAK56 - 4Cut TapeSi1 Channel10 V10.7 nCEnhancement  
BSS138W


50V 220mA 3.5@10V,0.22A 300mW 1.5V@250uA 1 N-Channel SOT-323 MOSFETs ROHS
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hongjiacheng 101578
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AUD 0.0234
Multiples of: 20

                   
NTZD3152PT1H


ON Semiconductor MOSFET PFET SOT563 20V 430MA TR
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ON Semiconductor 101268
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AUD 0.1528
Multiples of: 1

- 430 mA- 20 V900 mOhmsp - channel     smd/smtSOT - 563 - 6Reelsi2 channel     
SI2302


MOSFET N Trench 20V 2.1A 1.2V @ 50uA 72 mΩ @ 3.6A,4.5V SOT-23 (SOT-23-3) RoHS
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Hottech 99366
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AUD 0.0369
Multiples of: 20

                   
SI2302


20V 3.3A 1PCSNChannel SOT-23 MOSFETs ROHS
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FOSAN 91335
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AUD 0.0206
Multiples of: 20

                   
AO3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Hottech 90326
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AUD 0.0548
Multiples of: 10

                   
IRLB3813PBF


MOSFET N Trench 30V 260A 2.35V @ 150uA 1.95 mΩ @ 60A,10V TO-220 (TO-220-3) RoHS
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Infineon 5012
Ships to you
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AUD 1.3512
Multiples of: 1

260 A30 V1.95 mOhmsN - Channel 1.9 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V57 nC   
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