MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002KW-TP


MOSFET N-Ch Enh FET 60Vds 20Vgs 340mA 200mW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Micro Commercial Components (MCC) 101850
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AUD 0.0461
Multiples of: 3000

340 mA60 V5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V    
IRLR120NTRPBF


MOSFET N Trench 100V 10A 2V @ 250uA 185 mΩ @ 6A,10V TO-252-2 (DPAK) RoHS
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Infineon 101641
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AUD 0.2829
Multiples of: 5

11 A100 V265 mOhmsN - Channel  - 55 C+ 175 C39 WSmd/SmtDPAKReelSi1 Channel16 V13.3 nCEnhancement  
NTZD3152PT1H


ON Semiconductor MOSFET PFET SOT563 20V 430MA TR
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ON Semiconductor 101268
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AUD 0.1463
Multiples of: 1

- 430 mA- 20 V900 mOhmsp - channel     smd/smtSOT - 563 - 6Reelsi2 channel     
SI2301


MOSFET P Trench 20V 2.3A 1V @ 250uA 120 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Hottech 99910
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AUD 0.031
Multiples of: 20

                   
IRFB3006PBF


Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
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Infineon 99675
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AUD 1.9652
Multiples of: 1

270 A60 V2.1 mOhmsN - Channel    375 WThrough HoleTO - 220 - 3TubeSi 20 V200 nC   
AO3415


20V 4A 1.2W 50mΩ@4.5V,4.0A 800mV@250uA 160pF@10V P Channel 1450pF@10V 17.2nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 99454
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AUD 0.0393
Multiples of: 10

                   
SI2301S


20V 2.3A P Channel SOT-23 MOSFETs ROHS
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GOODWORK 99376
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AUD 0.0156
Multiples of: 50

                   
SI1427EDH-T1-BE3


P-Channel 20V 2A (Ta), 2A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 99195
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AUD 0.1588
Multiples of: 1

2 A20 V165 mOhmsP - Channel 1 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V21 nCEnhancement TrenchFET
ZXMP3A17E6TA


P-Channel 30 V 3.2A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 98940
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AUD 0.4361
Multiples of: 1

4 A30 V70 mOhmsP - channel 1 V- 55 C+ 150 C1.7 WSmd/smtSOT - 23ReelSi1 Channel- 10 V15.8 nCEnhancement  
FDMA86151L


Fairchild Semiconductor MOSFET
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ON Semiconductor 98940
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AUD 0.8734
Multiples of: 1

3.3 A100 V88 mOhmsN - Channel 2 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6ReelSi1 Channel20 V5.2 nCEnhancement Powertrench
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