MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTZD3155CT1G


MOSFET 20V 540mA/-430mA Complementary w/ESD
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ON Semiconductor 97000
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AUD 0.1209
Multiples of: 4000

540 mA20 V550 mOhms , 900 mOhmsN - Channel, P - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel6 V Enhancement  
STD10PF06-1


P-Channel 60 V 10A (Tc) 40W (Tc) Through Hole I-PAK
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STMicroelectronics 96967
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AUD 1.0592
Multiples of: 1

10 A- 60 V180 mOhmsp - channel20 V - 65 C+ 175 C40 Wthrough holeIPAK - 3Tube    enhancement  
BUK9Y58-75B,115


MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
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Nexperia 96089
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AUD 0.5273
Multiples of: 1

20.73 A75 V53 mOhmsN - Channel 1.25 V- 55 C+ 175 C60.4 WSmd/SmtLFPAK56 - 4Cut TapeSi1 Channel10 V10.7 nCEnhancement  
NTR5103NT1G


MOSFET NFET SOT23 60V 310MA 2.5
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ON Semiconductor 96030
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AUD 0.036
Multiples of: 3000

310 mA60 V2.5 OhmsN - Channel 1.9 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V810 pCEnhancement  
3LP01S-TL-E


P-Channel 30 V 100mA (Ta) 150mW (Ta) Surface Mount SMCP
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ON Semiconductor 96030
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AUD 0.1336
Multiples of: 1

- 100 mA- 30 V27 OhmsP - Channel  - 55 C+ 150 C150 mWSmd/SmtSMCP - 3ReelSi1 Channel10 V1.43 nC   
SI2336DS-T1-BE3


MOSFET N-CHANNEL 30V D-S
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Vishay 95965
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AUD 0.2519
Multiples of: 1

           Cut Tape       
BSS169H6327XT


MOSFET SIPMOS Small Signal Transistor
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Infineon 95957
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AUD 0.2437
Multiples of: 1

90 mA100 V6 OhmsN - Channel 2.9 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT - 23ReelSi1 Channel10 V2.1 nCDepletionAec - Q101 
SI3443DDV-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 95923
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AUD 0.1508
Multiples of: 1

4 A20 V90 mOhmsP - Channel 1.5 V- 55 C+ 150 C2.7 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 12 V , + 12 V9 nCEnhancement  
AP3404


SOT23 MOSFETs ROHS
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Quan Li 95469
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AUD 0.0731
Multiples of: 10

                   
DMP2200UDW-13


Diodes Incorporated MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A
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Diodes Incorporated 95141
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AUD 0.0887
Multiples of: 1

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