MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS123LT1G


MOSFET 100V 170mA N-Channel
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ON Semiconductor 438634
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AUD 0.0411
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170 mA100 V6 OhmsN - Channel 1.6 V- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
AO3400A


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 32 mΩ @ 5.8A,10V SOT-23 RoHS
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Bourne 214059
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AUD 0.0467
Multiples of: 10

                   
NX7002BKR


NXP Semiconductors MOSFET 60V N-channel Trench MOSFET
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Nexperia 151320
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AUD 0.0257
Multiples of: 3000

           Reel       
3LN01M-TL-H


ON Semiconductor MOSFET SWITCHING DEVICE
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ON Semiconductor 110275
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AUD 0.1096
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150 mA30 V5.2 mOhmsN - Channel     Smd/SmtSC - 70 - 3ReelSi1 Channel     
SI3483DDV-T1-BE3


MOSFET P-CHANNEL 30-V (D-S)
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Vishay 108954
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AUD 0.4942
Multiples of: 1

8 A30 V31.2 mOhmsP - Channel 2.2 V- 55 C+ 150 C3 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , 16 V4.5 nCEnhancement  
IPA60R520C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 8.1A; 29W; TO220FP
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Infineon 106719
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AUD 1.1484
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            coolmos c6      
BUK9Y58-75B,115


MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
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Nexperia 105387
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AUD 0.3834
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20.73 A75 V53 mOhmsN - Channel 1.25 V- 55 C+ 175 C60.4 WSmd/SmtLFPAK56 - 4Cut TapeSi1 Channel10 V10.7 nCEnhancement  
IRF7805TRPBF


MOSFET N Trench 30V 13A 3V @ 250uA 11 mΩ @ 7A,4.5V SO-8_3.9mm RoHS
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Infineon 101118
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AUD 0.8025
Multiples of: 1

13 A30 V11 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel12 V22 nC   
HL3401A


30V 4.2A 350mW 55m@10V,4.2A 1.4V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 83352
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AUD 0.0474
Multiples of: 10

                   
LBSS84LT1G


MOSFET P Trench 50V 130mA 2V @ 250uA 10 Ω @ 100mA,5V SOT-23 (SOT-23-3) RoHS
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Leshan 79249
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AUD 0.0201
Multiples of: 50

                   
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