MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CPH6341-TL-W


ON Semiconductor MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 136770
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AUD 0.299
Multiples of: 3000

- 5 A- 30 V59 mOhmsP - channel   + 150 C1.6 WSmd/SmtSOT - 26 - 6ReelSi1_Channel4 V10 nCEnhancement  
STP12NM50


Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
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STMicroelectronics 112322
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AUD 2.296
Multiples of: 1

                   
IRF7805TRPBF


MOSFET N Trench 30V 13A 3V @ 250uA 11 mΩ @ 7A,4.5V SO-8_3.9mm RoHS
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Infineon 111485
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AUD 0.8917
Multiples of: 1

13 A30 V11 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel12 V22 nC   
2N7002K 72K


60V 300mA 2.8Ω@10V,500mA 225mW 2.5V@250uA N Channel -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 111456
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AUD 0.0129
Multiples of: 50

                   
AO3400-ED


20V 3A 0.9W 55mΩ@10V,2.8A N Channel SOT-23 MOSFETs ROHS
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HXY MOS 111248
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AUD 0.016
Multiples of: 50

                   
3LN01M-TL-H


ON Semiconductor MOSFET SWITCHING DEVICE
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ON Semiconductor 110275
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AUD 0.1218
Multiples of: 1

150 mA30 V5.2 mOhmsN - Channel     Smd/SmtSC - 70 - 3ReelSi1 Channel     
DMN62D0UDW-7


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 109682
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AUD 0.0908
Multiples of: 1

350 mA , 350 mA60 v , 60 V1.2 Ohms , 1.2 OhmsN - Channel 500 mV , 500 mV- 55 C+ 150 C320 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel+/- 20 v , +/- 20 V500 pC , 500 pCEnhancement  
ZXMS6004DN8-13


MOSFET Dual 60V N-Ch FET 500mOhm 1.3A 120mJ
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Diodes Incorporated 107125
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AUD 0.55
Multiples of: 1

1.2 A , 1 A60 v , 60 V600 mOhms , 600 mOhmsN - Channel -- 40 C+ 150 C1.21 WSmd/SmtSO - 8ReelSi2 Channel- Enhancement Intellifet
AUIRFS8405TRL


MOSFET Auto 40V N-Ch FET 1.9mOhm 193A
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Infineon 24337
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AUD 2.4296
Multiples of: 1

120 A40 V1.9 mOhmsn - channel    163 Wsmd/smtD - PAK - 3Reelsi1 channel 107 nC aec - q101coolirfet
BUK78150-55ACUX


NXP Semiconductors MOSFET N-channel TrenchMOS standard level FET
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Nexperia 2910
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AUD 0.3121
Multiples of: 1

5.5 A55 V150 mOhmsN - Channel 2 V- 55 C+ 150 C8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel10 V Enhancement  
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