MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2315BDS-T1-E3


MOSFET 1.8V 3.2A 1.25W
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Vishay 125991
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AUD 0.3481
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3 A12 V50 mOhmsP - Channel 450 mV- 55 C+ 150 C0.75 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V8 nCEnhancement Trenchfet
SI2304BDS-T1-E3


MOSFET 30V 3.2A 0.07Ohm
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Vishay 125228
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AUD 0.316
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   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
SI3443BDV-T1-E3


MOSFET 20V 4.4A 2W
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Vishay 125004
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AUD 0.3825
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         Smd/SmtTSOP - 6Cut TapeSi     Trenchfet
FDMS7682


MOSFET 30V/20V N-Channel PowerTrench MOSFET
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ON Semiconductor 124495
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AUD 0.3957
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWER 56Reel       
DMN67D8L-7


60V 210mA 340mW 5O@10V,500mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 122220
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AUD 0.0312
Multiples of: 3000

210 mA60 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C340 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 30 V821 pCEnhancement  
STL7N10F7


STMicroelectronics MOSFET
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STMicroelectronics 122220
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AUD 0.7291
Multiples of: 3000

7 A100 V35 mOhmsN - Channel+/- 20 V4.5 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 4Cut TapeSi1 Channel20 V14 nCEnhancement Stripfet
STP160N3LL


MOSFET N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in a TO-220 package
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STMicroelectronics 122220
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AUD 1.0504
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120 A30 V3.2 mOhmsN - Channel 1 v to 2.5 V- 55 C+ 175 C136 WThrough HoleTO - 220 - 3 Si1 Channel+/- 20 V42 nCEnhancement Stripfet
SI3459BDV-T1-BE3


MOSFET P-CHANNEL 60-V (D-S)
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Vishay 121876
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AUD 0.6038
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2.9 A60 V216 mOhmsP - Channel 3 V- 55 C+ 150 C3.3 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V7.7 nCEnhancement  
FDP8874


MOSFET 30V 114A 5.3 OHM N-CH
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ON Semiconductor 121323
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AUD 1.4894
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114 A30 V3.6 mOhmsn - channel  - 55 C+ 175 C110 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement powertrench
BSS123


MOSFET N Trench 100V 170mA 2V @ 1mA 6 Ω @ 170mA,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 120959
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AUD 0.0206
Multiples of: 50

                   
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