MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTTFS4929NTAG


Trans MOSFET N-CH 30V 14.3A 8-Pin WDFN EP T/R
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ON Semiconductor 130017
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AUD 0.4439
Multiples of: 1

                   
2SK3018T106


N-Channel 30 V 100mA (Ta) 200mW (Ta) Surface Mount UMT3
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ROHM 128835
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AUD 0.0376
Multiples of: 10

100 mA30 V8 OhmsN - Channel 800 mV- 55 C150 C200 mW (1/5 w)SmdsmtSOT - 23 - 3ReelSi1 Channel4 V Enhancement  
CMPDM7002AHC TR


MOSFET Small Signal Mosfet N-Channel
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Central Semiconductor 128635
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AUD 0.2891
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1 A60 V150 mOhmsN - Channel 1.2 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel20 V2.3 nCEnhancement  
2N7000TA


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.4W; TO92
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ON Semiconductor 128040
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AUD 0.1552
Multiples of: 2000

                   
DMN2020UFCL-7


Diodes Incorporated MOSFET 20V N-Ch Enh FET 0.61W 1788pF 21.5nC
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Diodes Incorporated 128040
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AUD 0.2268
Multiples of: 3000

9 A20 V14 mOhmsN - Channel 0.9 V- 55 C+ 150 C2 WSmd/SmtX1 - DFN1616 - 6ReelSi1 Channel10 V21.5 nCEnhancement  
LBSS138LT1G


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V SOT-23 (SOT-23-3) RoHS
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Leshan 127700
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AUD 0.017
Multiples of: 50

                   
RU1E002SPTCL


Trans MOSFET P-CH Si 30V 0.25A 3-Pin UMTF T/R
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ROHM 127560
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AUD 0.0805
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250 mA30 V900 mOhmsP - Channel 2.5 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323FL - 3Cut TapeSi1 Channel20 V Enhancement  
BSS138


50V 340mA 2.5@10V,0.34A 350mW 1.6V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 126973
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AUD 0.0228
Multiples of: 20

                   
SI2302S


20V 2.5A 1PCSNChannel SOT-23 MOSFETs ROHS
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FOSAN 126633
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AUD 0.012
Multiples of: 50

                   
2N7002NXAKR


MOSFET 60 V single N-channel Trench MOSFET
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Nexperia 126526
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AUD 0.0208
Multiples of: 20

300 mA60 V4.5 OhmsN - Channel 1.1 V- 55 C+ 150 C325 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.33 nCEnhancement  
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