MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR9120TRPBF


P-Channel 100 V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 192060
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AUD 0.8388
Multiples of: 2000

   P - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
BSD235CH6327XT


MOSFET OptiMOS 2,-P 2 Small Signal Transistor
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Infineon 133872
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AUD 0.1163
Multiples of: 1

950 mA , 530 mA20 V266 mOhms , 745 mOhmsN And P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
SI3443CDV-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 133664
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AUD 0.3867
Multiples of: 1

5.97 A20 V100 mOhmsP - Channel 1.5 V- 55 C+ 150 C3.2 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 12 V , + 12 V7.53 nCEnhancement  
PJE8408_R1_00001


MOSFET /E08/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI08/PJ///
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Panjit 132334
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AUD 0.0754
Multiples of: 1

500 mA20 V3 OhmsN - Channel 900 mV- 55 C+ 150 C300 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 10 V , 10 V1.4 nCEnhancement  
BSS816NWH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.4A; 0.5W; SOT323
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Infineon 131866
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AUD 0.0754
Multiples of: 1

            Optimos 2      
IPB020N04NGATMA1


Transistor: N-MOSFET; unipolar; 40V; 140A; 167W; PG-TO263-7
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Infineon 131174
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AUD 2.3214
Multiples of: 1

            Optimos 3      
AO3407A


MOSFET P Trench 30V 4.3A 3V @ 250uA 48 mΩ @ 4.3A,10V SOT-23-3L RoHS
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Alpha & Omega 131173
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AUD 0.0841
Multiples of: 5

4.3 A  P    1.4 WSurface Mount      Enhancement  
NTZS3151PT1G


MOSFET -20V -950mA P-Channel
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ON Semiconductor 130843
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AUD 0.1016
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 563Reel       
SI2301CDS-T1-GE3-ES


20V 3A 1W 58m@4.5V,3A 700mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 130620
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AUD 0.0174
Multiples of: 10

                   
BSC054N04NS G


MOSFET OptiMOS 3 PWR TRANS 40V 81A
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Infineon 130319
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AUD 0.7429
Multiples of: 1

81 A40 V5.4 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSmd/SmtTDSONReelSi1 Channel10 V26 nCEnhancement Optimos
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