MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CPH6341-TL-W


ON Semiconductor MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 136770
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AUD 0.3097
Multiples of: 3000

- 5 A- 30 V59 mOhmsP - channel   + 150 C1.6 WSmd/SmtSOT - 26 - 6ReelSi1_Channel4 V10 nCEnhancement  
STL58N3LLH5


MOSFET Automotive N-channel 30 V, 0.0076 Ohm, 56 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 136770
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AUD 0.825
Multiples of: 3000

56 A30 V9 mOhmsN - Channel 1 v to 2.5 V- 55 C+ 175 C62.5 WSmd/SmtPowerflat - 8Cut Tape-1 Channel22 v / - 20 V6.5 nCEnhancementAec - Q101Stripfet
CMPDM7002AHC TR


MOSFET Small Signal Mosfet N-Channel
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Central Semiconductor 136289
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AUD 0.2955
Multiples of: 1

1 A60 V150 mOhmsN - Channel 1.2 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel20 V2.3 nCEnhancement  
PMZ1000UN,315


MOSFET MOSFET N-CH
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Nexperia 135800
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AUD 0.1597
Multiples of: 1

480 mA30 V1 Ohmsn - channel     smd/smtSOT - 883 - 3Reelsi1 channel     
BSD235NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 134583
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AUD 0.1479
Multiples of: 1

950 mA20 V266 mOhms , 266 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6ReelSi2 Channel12 V320 pC , 320 pCEnhancementAec - Q101 
AO3401A


30V 4.5A 40m@10V,4.5A 1.4W 1V@250uA 1PCSPChannel SOT-23-3L MOSFETs ROHS
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ElecSuper 134054
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AUD 0.0401
Multiples of: 20

                   
BSD235CH6327XT


MOSFET OptiMOS 2,-P 2 Small Signal Transistor
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Infineon 133938
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AUD 0.1199
Multiples of: 1

950 mA , 530 mA20 V266 mOhms , 745 mOhmsN And P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
SSM6J501NU,LF


P-Channel 20 V 10A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2)
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Toshiba 133860
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AUD 0.2164
Multiples of: 3000

10 A20 V15.3 mOhmsP - Channel  - 55 C+ 150 C2 WSmd/SmtUDFN - 6ReelSi1 Channel- 4.5 V29.9 nCEnhancement  
AO3415A


MOSFET P Trench 20V 5A 850mV @ 250uA 45 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Alpha & Omega 11850
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AUD 0.1358
Multiples of: 1

4 A  P    1.5 WSurface Mount      Enhancement  
IRF640NPBF


MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 11A,10V TO-220 (TO-220-3) RoHS
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Infineon 2745
Ships to you
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AUD 0.7104
Multiples of: 1

18 A200 V150 mOhmsN - Channel  - 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V44.7 nCEnhancement  
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