MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS7682


MOSFET 30V/20V N-Channel PowerTrench MOSFET
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ON Semiconductor 123107
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AUD 0.4208
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWER 56Reel       
2SK3018


MOSFET N Trench 30V 100mA 1.5V @ 100uA 8 Ω @ 10mA,4V SOT-323 (SC-70) RoHS
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Changjing Electronics Technology 123073
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AUD 0.0212
Multiples of: 20

                   
STL7N10F7


STMicroelectronics MOSFET
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STMicroelectronics 122220
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AUD 0.7291
Multiples of: 3000

7 A100 V35 mOhmsN - Channel+/- 20 V4.5 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 4Cut TapeSi1 Channel20 V14 nCEnhancement Stripfet
STP160N3LL


MOSFET N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in a TO-220 package
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STMicroelectronics 122220
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AUD 1.2411
Multiples of: 1

120 A30 V3.2 mOhmsN - Channel 1 v to 2.5 V- 55 C+ 175 C136 WThrough HoleTO - 220 - 3 Si1 Channel+/- 20 V42 nCEnhancement Stripfet
SI3459BDV-T1-BE3


MOSFET P-CHANNEL 60-V (D-S)
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Vishay 121876
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AUD 0.6038
Multiples of: 1

2.9 A60 V216 mOhmsP - Channel 3 V- 55 C+ 150 C3.3 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V7.7 nCEnhancement  
2N7002K_R1_00001


MOSFET N Trench 60V 300mA 2.5V @ 250uA 4 Ω @ 200mA,4.5V SOT-23 (SOT-23-3) RoHS
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Panjit 121768
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AUD 0.0314
Multiples of: 1

                   
FDP8874


MOSFET 30V 114A 5.3 OHM N-CH
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ON Semiconductor 121323
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AUD 1.5839
Multiples of: 1

114 A30 V3.6 mOhmsn - channel  - 55 C+ 175 C110 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement powertrench
PJA3460_R1_00001


MOSFET /A60/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-60TMN/NF60T-QI04/PJ///
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Panjit 116141
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AUD 0.1152
Multiples of: 1

2.5 A60 V90 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.3 nCEnhancement  
BSS138-7-F


Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
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Diodes Incorporated 115449
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AUD 0.0231
Multiples of: 20

200 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
DMG1012T-7


MOSFET MOSFET N-CHANNEL SOT-523
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Diodes Incorporated 5276
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AUD 0.03
Multiples of: 20

630 mA20 V400 mOhmsN - Channel 500 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel4.5 V736.6 pCEnhancement  
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