MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SUM110P06-08L-E3


MOSFET 60V 110A 272W 8.0mohm @ 10V
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Vishay 125421
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AUD 3.3471
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110 A60 V8 mOhmsP - Channel 1 V- 55 C+ 175 C272 WSmd/SmtTO - 263ReelSi1 Channel- 10 V160 nCEnhancement Trenchfet
FQU17P06TU


Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
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ON Semiconductor 124614
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AUD 0.772
Multiples of: 1

   P Channel               
6HP04MH-TL-W


ON Semiconductor MOSFET
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ON Semiconductor 122220
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AUD 0.1527
Multiples of: 1

- 370 mA- 60 V4.2 Ohmsp - channel     smd/smtSOT - 323 - 3Reelsi1 channel     
UPA679TB-T1-A


Trans MOSFET N/P-CH 20V 0.35A/0.25A Automotive 6-Pin SC-88 T/R
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Renesas 122220
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AUD 0.1904
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   n/p    0.2 Wsurface mount Tape And Reel    enhancement  
STL7N10F7


STMicroelectronics MOSFET
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STMicroelectronics 122220
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AUD 0.5125
Multiples of: 3000

7 A100 V35 mOhmsN - Channel+/- 20 V4.5 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 4Cut TapeSi1 Channel20 V14 nCEnhancement Stripfet
SI3459BDV-T1-BE3


MOSFET P-CHANNEL 60-V (D-S)
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Vishay 121876
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AUD 0.6038
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2.9 A60 V216 mOhmsP - Channel 3 V- 55 C+ 150 C3.3 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V7.7 nCEnhancement  
HL2301A


20V 2.3A 700mW 112m@4.5V,2.3A 1V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 121579
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AUD 0.0339
Multiples of: 20

                   
FDP8874


MOSFET 30V 114A 5.3 OHM N-CH
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ON Semiconductor 121323
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AUD 1.357
Multiples of: 1

114 A30 V3.6 mOhmsn - channel  - 55 C+ 175 C110 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancement powertrench
IRLML0030TRPBF


MOSFET N Trench 30V 5.3A 2.3V @ 25uA 27 mΩ @ 5.2A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 58044
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AUD 0.1161
Multiples of: 5

5.3 A30 V27 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
Si2301CDS-T1-E3


MOSFET 20V 3.1A 1.6W 112mohm @ 4.5V
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Vishay 38969
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AUD 0.1996
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   P - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel       
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