MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3401-ED


20V 3A 110mΩ@10V,2A 0.7W P Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 219656
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AUD 0.0187
Multiples of: 50

                   
LBSS84LT1G


MOSFET P Trench 50V 130mA 2V @ 250uA 10 Ω @ 100mA,5V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Leshan 147886
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AUD 0.0181
Multiples of: 20

                   
IPI045N10N3GXKSA1


Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO262-3
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Infineon 145985
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AUD 2.5162
Multiples of: 500

            Optimos 3      
AO3401A


30V 4.2A 60mΩ@10V,4.2A 1.2W 1.3V@250uA 85pF@15V P Channel 1050pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 145480
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AUD 0.032
Multiples of: 20

                   
IRLML6401


MOSFET P Trench 12V 4.3A 950mV @ 250uA 50 mΩ @ 4.3A,4.5V SOT23 RoHS
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KEXIN 144471
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AUD 0.0415
Multiples of: 20

                   
NDS352AP


Transistor: P-MOSFET; unipolar; -30V; -0.9A; 0.5W; SuperSOT-3
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ON Semiconductor 142590
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AUD 0.1573
Multiples of: 3000

                   
HL3401


30V 4.4A 1.2W 55m@10V,4.4A 900mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 130581
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AUD 0.0363
Multiples of: 10

                   
50N06


60V 50A 12mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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HL 123747
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AUD 0.1054
Multiples of: 5

                   
7002-2N7002K


SOT-23 MOSFETs ROHS
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GOODWORK 117515
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AUD 0.0129
Multiples of: 50

                   
SI2301CDS-T1-GE3


MOSFET -20V Vds 8V Vgs SOT-23
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Vishay 1329
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between Wed. 12 Aug to Tue. 18 Aug Calender.png

AUD 0.2382
Multiples of: 1

3.1 A20 V112 mOhmsP - Channel 400 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10 nCEnhancement Trenchfet
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