MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138


MOSFET N Trench 50V 220mA 1.5V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 265198
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AUD 0.0206
Multiples of: 50

                   
2N7002K-7


N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 253170
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AUD 0.0365
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
SI2301CDS-T1-GE3


MOSFET -20V Vds 8V Vgs SOT-23
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Vishay 214282
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AUD 0.0782
Multiples of: 10

3.1 A20 V112 mOhmsP - Channel 400 mV- 55 C+ 150 C1.6 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10 nCEnhancement Trenchfet
SI7611DN-T1-GE3


MOSFET 40V 18A 39W 25mohm @ 10V
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Vishay 177510
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AUD 1.2011
Multiples of: 3000

18 A40 V25 mOhmsP - Channel 1 V- 50 C+ 150 C39 WSmd/SmtPOWERPAK 1212 - 8ReelSi1 Channel- 10 V41 nCEnhancement Trenchfet
SI2307CDS-T1-BE3


P-Channel 30V 2.7A (Ta), 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 160818
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AUD 0.2341
Multiples of: 1

          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
HL2310A


60V 3A 1.2W 105m@10V,3.0A 2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 158352
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AUD 0.0419
Multiples of: 10

                   
BSZ097N04LS G


Infineon Technologies MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
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Infineon 152517
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AUD 0.4243
Multiples of: 1

12 A40 V9.7 mOhmsN - Channel20 V1.2 V- 55 C+ 150 C2.1 WSmd/SmtTSDSON - 8ReelSi1 Channel10 V18 nCEnhancement Optimos
AO3401A


30V 4.5A 40m@10V,4.5A 1.4W 1V@250uA 1PCSPChannel SOT-23-3L MOSFETs ROHS
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ElecSuper 143327
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AUD 0.0395
Multiples of: 20

                   
LBSS138LT1G


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V SOT-23 (SOT-23-3) RoHS
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Leshan 133957
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AUD 0.0175
Multiples of: 50

                   
IRFR5305TRLPBF


Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
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Infineon 17460
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AUD 0.75
Multiples of: 3000

31 A55 V65 mOhmsP - Channel  - 55 C+ 175 C110 WSmd/SmtDPAKReelSi1 Channel20 V42 nCEnhancement  
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