MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
8205


20V 6A 19mΩ 1.2V N Channel SOT-23-6 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HL 148254
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AUD 0.021
Multiples of: 20

                   
SQ2337ES-T1_BE3


MOSFET P-CHANNEL 80V D-S
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Vishay 144122
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AUD 0.3579
Multiples of: 1

2.2 A80 V290 mOhmsP - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V11.5 nCEnhancement TrenchFET
IRLML6402


MOSFET P Trench 20V 3.7A 950mV @ 250uA 65 mΩ @ 3.7A,4.5V SOT-23 RoHS
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Youtai 142931
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AUD 0.0393
Multiples of: 10

                   
2N7002T


60V 300mA 1.8Ω@10V,300mA 350mW 1.6V@250uA 2pF@30V N Channel 27pF@30V 1.7nC@4.5V -55℃~+150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 142784
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AUD 0.0236
Multiples of: 20

                   
BSS138BKS,115


NXP Semiconductors MOSFET 60 V, 320 mA dual N-ch Trench MOSFET
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Nexperia 142663
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AUD 0.0821
Multiples of: 1

320 mA60 V1.6 OhmsN - Channel 480 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel20 V0.7 nCEnhancement  
2N7002T-7-F


60V 115mA 7.5O@5V,50mA 150mW N Channel SOT-523-3 MOSFETs ROHS
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Diodes Incorporated 142590
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AUD 0.0396
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel10 V Enhancement  
BSS306NH6327XTSA1


Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3
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Infineon 142590
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AUD 0.1004
Multiples of: 3000

2.3 A30 V57 mOhmsN - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V1.5 nCEnhancementAec - Q101 
AO3407A


MOSFET P Trench 30V 4.3A 3V @ 250uA 48 mΩ @ 4.3A,10V SOT-23-3L RoHS
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Alpha & Omega 140281
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AUD 0.0997
Multiples of: 5

4.3 A  P    1.4 WSurface Mount      Enhancement  
2N7002,215


MOSFET N-CH TRNCH 60V 300MA
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Nexperia 132230
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AUD 0.0361
Multiples of: 20

300 mA60 V2.8 OhmsN - Channel30 V1 V- 65 C+ 150 C830 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
IRF3205PBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 62A,10V TO-220 (TO-220-3) RoHS
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Infineon 82847
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AUD 0.3595
Multiples of: 1

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