MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302CDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 145023
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AUD 0.2043
Multiples of: 1

2.9 A20 V57 mOhmsN - Channel 850 mV- 55 C+ 150 C860 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V3.5 nCEnhancement  
IRLML6402


MOSFET P Trench 20V 3.7A 950mV @ 250uA 65 mΩ @ 3.7A,4.5V SOT-23 RoHS
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Youtai 142931
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AUD 0.0393
Multiples of: 10

                   
BSS123-7-F


100V 170mA 300mW 6O@10V,170mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 142590
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AUD 0.0232
Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
DMG3406L-13


MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A
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Diodes Incorporated 142205
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AUD 0.0838
Multiples of: 1

3.6 A30 V25 mOhmsN - Channel 1 V- 55 C+ 150 C770 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V11.2 nCEnhancement  
BSD235CH6327XT


MOSFET OptiMOS 2,-P 2 Small Signal Transistor
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Infineon 142177
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AUD 0.1135
Multiples of: 1

950 mA , 530 mA20 V266 mOhms , 745 mOhmsN And P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
STP141NF55


STMicroelectronics MOSFET POWER MOSFET
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STMicroelectronics 141620
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AUD 2.9018
Multiples of: 1

80 A55 V8 mOhmsn - channel20 V - 55 C+ 175 C300 Wthrough holeTO - 220 - 3Tubesi1 channel20 V enhancementaec - q101stripfet
AO3407A


MOSFET P Trench 30V 4.1A 3V @ 250uA 52 mΩ @ 4.1A,10V SOT-23 RoHS
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Youtai 139718
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AUD 0.0302
Multiples of: 20

                   
BSS83P H6327


Infineon Technologies MOSFET P-Ch SOT-23-3
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Infineon 139306
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AUD 0.0752
Multiples of: 5

330 mA60 V3 OhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3-Si1 Channel- 4.5 V2.38 nCEnhancementAec - Q101 
BSS308PE H6327


Infineon Technologies MOSFET P-Ch -30V -2A SOT-23-3
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Infineon 138248
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AUD 0.1316
Multiples of: 1

2 A30 V62 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 5 nCEnhancementAec - Q101 
AO3400


SOT-23-3L MOSFETs ROHS
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FOSAN 114285
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AUD 0.0214
Multiples of: 20

                   
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