MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRLR3705ZTRPBF


Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
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Infineon 95060
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AUD 0.7463
Multiples of: 2000

89 A55 V8 mOhmsN - Channel 3 V + 175 C130 WSmd/SmtDPAKReelSi1 Channel 66 nC   
BSD235C H6327


Infineon Technologies MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
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Infineon 94991
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AUD 0.11
Multiples of: 1

950 mA , 530 mA20 V266 mOhms , 745 mOhmsN - Channel, P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6-Si2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
RUE003N02TL


N-Channel 20 V 300mA (Ta) 150mW (Ta) Surface Mount EMT3
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ROHM 94112
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AUD 0.183
Multiples of: 3000

300 mA20 V1 OhmsN - Channel  - 55 C+ 150 C150 mWSmd/SmtEMT - 3ReelSi1 Channel8 V Enhancement  
IRLZ44NSTRLPBF


N-Channel 55 V 47A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK
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Infineon 93896
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AUD 0.8769
Multiples of: 800

47 A55 V35 mOhmsN - Channel    110 WSmd/SmtD2PAKReelSi1 Channel16 V32 nC   
SI6968BEDQ-T1-E3


20V 5.2A 22mO@4.5V,6.5A 1W 2PCSNChannel(Common Drain) TSSOP-8 MOSFETs ROHS
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Vishay 93888
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AUD 0.6879
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTSSOP - 8ReelSi     Trenchfet
2N7002 TR13


MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs
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Central Semiconductor 93742
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AUD 0.1596
Multiples of: 1

   N - Channel     Smd/SmtSOT - 23Cut TapeSi1 Channel     
IRLHS2242TRPBF


P-Channel 20 V 7.2A (Ta), 15A (Tc) 2.1W (Ta), 9.6W (Tc) Surface Mount 6-PQFN (2x2)
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Infineon 93120
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AUD 0.1918
Multiples of: 4000

15 A20 V31 mOhmsP - Channel    9.6 WSmd/SmtPQFN - 6ReelSi1 Channel12 V12 nC   
STR2P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 93120
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AUD 0.2172
Multiples of: 3000

2 A30 V56 mOhmsP - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V6 nCEnhancement Stripfet
SI3483CDV-T1-GE3


MOSFET -30V Vds 20V Vgs TSOP-6
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Vishay 93120
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AUD 0.2201
Multiples of: 3000

8 A30 V34 mOhmsP - Channel 1 V- 55 C+ 150 C4.2 WSmd/SmtTSOP - 6Cut TapeSi1 Channel10 V22 nCEnhancement Trenchfet
NTLGD3502NT2G


Trans MOSFET N-CH 20V 4.3A 6-Pin DFN T/R
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ON Semiconductor 93120
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AUD 0.8022
Multiples of: 1

4.3 A20 V60 mOhmsn - channel  - 55 C+ 150 C1.74 Wsmd/smtDFN - 6Cut Tapesi2 channel20 V enhancement  
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