MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS169H6327XT


MOSFET SIPMOS Small Signal Transistor
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 95957
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AUD 0.2437
Multiples of: 1

90 mA100 V6 OhmsN - Channel 2.9 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT - 23ReelSi1 Channel10 V2.1 nCDepletionAec - Q101 
SSM6N55NU,LF


Toshiba MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
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Toshiba 95882
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AUD 0.1623
Multiples of: 1

4 A30 V64 mOhmsN - Channel 1.3 v to 2.5 V- 55 C+ 150 C1 WSmd/SmtUDFN - 6ReelSi2 Channel20 V2.5 nC   
PMCM4401VPEZ


MOSFET 12V P-Channel Trench MOSFET
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Nexperia 95501
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AUD 0.2085
Multiples of: 5

4.9 A12 V55 mOhmsP - Channel 900 mV- 55 C+ 150 C12.5 WSmd/SmtWLCSP - 4Cut TapeSi1 Channel8 V10 nCEnhancement  
CEDM7004 TR


Central Semiconductor MOSFET 30V N-Ch Enh FET 8.0Vgs 1.78ID 100mW
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Central Semiconductor 95315
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AUD 0.3221
Multiples of: 1

1.78 A30 V280 mOhmsN - Channel 1 V- 65 C+ 150 C100 mWSmd/SmtSOT - 883LReelSi1 Channel8 V792 pCEnhancement  
AP40P05


40V 5A 65mΩ@10V,3A 2W P Channel SOT-23-3 MOSFETs ROHS
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Quan Li 94885
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AUD 0.0673
Multiples of: 20

                   
NCV8403BDTRKG


MOSFET SELF PROTECTED FET
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ON Semiconductor 94575
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AUD 1.2393
Multiples of: 2500

15 A42 V53 mOhmsN - Channel 1 V- 40 C+ 150 C2.5 WSmd/SmtDPAK - 3Cut TapeSi1 Channel14 V EnhancementAec - Q100 
RUE003N02TL


N-Channel 20 V 300mA (Ta) 150mW (Ta) Surface Mount EMT3
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ROHM 94112
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AUD 0.183
Multiples of: 3000

300 mA20 V1 OhmsN - Channel  - 55 C+ 150 C150 mWSmd/SmtEMT - 3ReelSi1 Channel8 V Enhancement  
BSD235C H6327


Infineon Technologies MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
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Infineon 94047
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AUD 0.1179
Multiples of: 1

950 mA , 530 mA20 V266 mOhms , 745 mOhmsN - Channel, P - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363 - 6-Si2 Channel12 V340 pC , - 400 pCEnhancementAec - Q101 
2N7002 TR13


MOSFET N-Ch Enh FET 80V 60Vdg 40Vgs
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Central Semiconductor 93742
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AUD 0.1596
Multiples of: 1

   N - Channel     Smd/SmtSOT - 23Cut TapeSi1 Channel     
BSS84P H6327


MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon 93702
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AUD 0.0741
Multiples of: 5

170 mA60 V5.8 OhmsP - Channel 2 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT23 - 3ReelSi1 Channel20 V1.5 nCEnhancement  
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